Growth of arsenic-doped cadmium telluride epilayers by metalorganic chemical vapor deposition
Chilyasov, A. V., Moiseev, A. N., Evstigneev, V. S., Stepanov, B. S., Drozdov, M. N.
Published in Inorganic materials (01.12.2016)
Published in Inorganic materials (01.12.2016)
Get full text
Journal Article
Growth of Arsenic-Doped Hg1 – x Cd x Te (x ~ 0.4) Epilayers by Metalorganic Chemical Vapor Deposition
Evstigneev, V S, Chilyasov, A V, Moiseev, A N, Kostyunin, M V
Published in Inorganic materials (01.01.2019)
Published in Inorganic materials (01.01.2019)
Get full text
Journal Article
Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg1 – xCdxTe Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method
Evstigneev, V. S., Varavin, V. S., Chilyasov, A. V., Remesnik, V. G., Moiseev, A. N., Stepanov, B. S.
Published in Semiconductors (Woodbury, N.Y.) (01.06.2018)
Published in Semiconductors (Woodbury, N.Y.) (01.06.2018)
Get full text
Journal Article
Growth of Arsenic-Doped Hg1– xCdxTe (x ~ 0.4) Epilayers by Metalorganic Chemical Vapor Deposition
Evstigneev, V. S., Chilyasov, A. V., Moiseev, A. N., Kostyunin, M. V.
Published in Inorganic materials (01.10.2019)
Published in Inorganic materials (01.10.2019)
Get full text
Journal Article
Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg{sub 1– x}Cd{sub x}Te Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method
Evstigneev, V. S., Varavin, V. S., Chilyasov, A. V., Remesnik, V. G., Moiseev, A. N., Stepanov, B. S.
Published in Semiconductors (Woodbury, N.Y.) (15.06.2018)
Published in Semiconductors (Woodbury, N.Y.) (15.06.2018)
Get full text
Journal Article
Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg1 – xCd x Te Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method
Evstigneev, V. S., Varavin, V. S., Chilyasov, A. V., Remesnik, V. G., Moiseev, A. N., Stepanov, B. S.
Published in Semiconductors (Woodbury, N.Y.) (01.06.2018)
Published in Semiconductors (Woodbury, N.Y.) (01.06.2018)
Get full text
Journal Article
Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg1 – x Cd x Te Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method
Evstigneev, V S, Varavin, V S, Chilyasov, A V, Remesnik, V G, Moiseev, A N, Stepanov, B S
Published in Semiconductors (Woodbury, N.Y.) (01.01.2018)
Published in Semiconductors (Woodbury, N.Y.) (01.01.2018)
Get full text
Journal Article
An experimental model of acute purulent peritonitis
Buianov, V M, Rodoman, G V, Belous, G G, Korotaev, A L, Evstigneev, S V, Surmin, E P
Published in Hirurgija (Moskva) (1997)
Get more information
Published in Hirurgija (Moskva) (1997)
Journal Article