High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture
Olsen, S.H., O'Neill, A.G., Driscoll, L.S., Kwa, K.S.K., Chattopadhyay, S., Waite, A.M., Tang, Y.T., Evans, A.G.R., Norris, D.J., Cullis, A.G., Paul, D.J., Robbins, D.J.
Published in IEEE transactions on electron devices (01.09.2003)
Published in IEEE transactions on electron devices (01.09.2003)
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Journal Article
Effects of grating heights on highly efficient unibond SOI waveguide grating couplers
Ang, T.W., Reed, G.T., Vonsovici, A., Evans, A.G.R., Routley, P.R., Josey, M.R.
Published in IEEE photonics technology letters (01.01.2000)
Published in IEEE photonics technology letters (01.01.2000)
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Journal Article
Optimization of Alloy Composition for High-Performance Strained-Si–SiGe N-Channel MOSFETs
Olsen, S.H., O'Neill, A.G., Driscoll, L.S., Chattopadhyay, S., Kwa, K.S.K., Waite, A.M., Tang, Y.T., Evans, A.G.R., Zhang, J.
Published in IEEE transactions on electron devices (01.07.2004)
Published in IEEE transactions on electron devices (01.07.2004)
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Journal Article
Optimization of alloy composition for high-performance strained-Si-SiGeN-channel MOSFETs
Olsen, S.H., O'Neill, A.G., Driscoll, L.S., Chattopadhyay, S., Kwa, K.S.K., Waite, A.M., Tang, Y.T., Evans, A.G.R., Jing Zhang
Published in IEEE transactions on electron devices (01.07.2004)
Published in IEEE transactions on electron devices (01.07.2004)
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Journal Article
Raised source/drains for 50nm MOSFETs using a silane/dichlorosilane mixture for selective epitaxy
Waite, A.M., Lloyd, N.S., Osman, K., Zhang, W., Ernst, T., Achard, H., Wang, Y., Deleonibus, S., Hemment, P.L.F., Bagnall, D.M., Evans, A.G.R., Ashburn, P.
Published in Solid-state electronics (01.04.2005)
Published in Solid-state electronics (01.04.2005)
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Journal Article
A novel flash EEPROM cell based on trench technology for integration within power integrated circuits
Garner, D.M., Chen, Y., Sabesan, L., Amaratunga, G.A.J., Blackburn, A., Clark, J., Sekiariapuram, S.S., Evans, A.G.R.
Published in IEEE electron device letters (01.05.2000)
Published in IEEE electron device letters (01.05.2000)
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Journal Article
Packaging of closed chamber PCR-chips for DNA amplification
Schabmueller, C.G.J, Evans, A.G.R, Brunnschweiler, A, Ensell, G, Leslie, D.L, Lee, M.A
Published in Microelectronics international (01.08.2000)
Published in Microelectronics international (01.08.2000)
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Journal Article
Thick selective epitaxial growth of silicon at 960°C using silane only
Afshar-Hanaii, N., Bonar, J.M., Evans, A.G.R., Parker, G.J., Starbuck, C.M.K., Kemhadjian, H.A.
Published in Microelectronic engineering (01.08.1992)
Published in Microelectronic engineering (01.08.1992)
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Journal Article
Novel actuation of an integrated peristaltic micropump
Husband, B., Bu, M., Apostolopoulos, V., Melvin, T., Evans, A.G.R.
Published in Microelectronic engineering (01.06.2004)
Published in Microelectronic engineering (01.06.2004)
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Journal Article
Realisation of very high voltage electrode–nozzle systems for MEMS
Paine, M.D., Gabriel, S., Schabmueller, C.G.J., Evans, A.G.R.
Published in Sensors and actuators. A. Physical. (20.08.2004)
Published in Sensors and actuators. A. Physical. (20.08.2004)
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Journal Article
The impact of non-uniform channel layer growth on device characteristics in state of the Art Si/SiGe/Si p-metal oxide semiconductor field effect transistors
Chang, A.C.K., Ross, I.M., Norris, D.J., Cullis, A.G., Tang, Y.T., Cerrina, C., Evans, A.G.R.
Published in Thin solid films (21.02.2006)
Published in Thin solid films (21.02.2006)
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Journal Article
New salicidation technology PtSi for strained SiGe device
Rong, B., Zijlstra, T., Tang, Y.T., Evans, A.G.R.
Published in Microelectronic engineering (01.03.2005)
Published in Microelectronic engineering (01.03.2005)
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Journal Article
Conference Proceeding
Micromachined chemical reaction system
Koch, M., Schabmueller, C.G.J., Evans, A.G.R., Brunnschweiler, A.
Published in Sensors and actuators. A, Physical (20.04.1999)
Published in Sensors and actuators. A, Physical (20.04.1999)
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Journal Article
Conference Proceeding
Thermal oxidation of strained Si/SiGe: impact of surface morphology and effect on MOS devices
Olsen, S.H, O’Neill, A.G, Norris, D.J, Cullis, A.G, Bull, S.J, Chattopadhyay, S, Kwa, K.S.K, Driscoll, L.S, Waite, A.M, Tang, Y.T, Evans, A.G.R
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.06.2004)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (15.06.2004)
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Journal Article
Comparison between bulk micromachined and CMOS X-ray detectors
Rocha, J.G., Schabmueller, C.G.J., Ramos, N.F., Lanceros-Mendez, S., Moreira, M.V., Evans, A.G.R., Wolffenbuttel, R.F., Correia, J.H.
Published in Sensors and actuators. A. Physical. (21.09.2004)
Published in Sensors and actuators. A. Physical. (21.09.2004)
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Journal Article
Piezoresistive silicon V-AFM cantilevers for high-speed imaging
Su, Y, Brunnschweiler, A, Evans, A.G.R, Ensell, G
Published in Sensors and actuators. A, Physical (30.08.1999)
Published in Sensors and actuators. A, Physical (30.08.1999)
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Journal Article
Conference Proceeding
Strained-Si n-MOS surface-channel and buried Si 0.7Ge 0.3 compressively-strained p-MOS fabricated in a 0.25 μm heterostructure CMOS process
Paul, D.J., Temple, M., Olsen, S.H., ONeill, A.G., Tang, Y.T., Waite, A.M., Cerrina, C., Evans, A.G.R., Li, X., Zhang, J., Norris, D.J., Cullis, A.G.
Published in Materials science in semiconductor processing (2005)
Published in Materials science in semiconductor processing (2005)
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Journal Article
Adverse effect of Ge+ implantation for fabrication of SiGe PMOS
Straube, U.N., Waite, A.M., Evans, A.G.R., Nejim, A., Hemment, P.L.F.
Published in Electronics letters (06.12.2001)
Published in Electronics letters (06.12.2001)
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