The origin of changes in structural style across the Bandar Abbas syntaxis, SE Zagros (Iran)
Molinaro, M, Guezou, J.C, Leturmy, P, Eshraghi, S.A, de Lamotte, D.Frizon
Published in Marine and petroleum geology (01.06.2004)
Published in Marine and petroleum geology (01.06.2004)
Get full text
Journal Article
Effects of oxide interface traps and transient enhanced diffusion on the process modeling of PMOS devices
Vuong, H.-H., Rafferty, C.S., Eshraghi, S.A., Lentz, J.L., Zeitzoff, P.M., Pinto, M.R., Hillenius, S.J.
Published in IEEE transactions on electron devices (01.07.1996)
Published in IEEE transactions on electron devices (01.07.1996)
Get full text
Journal Article
An improved generalized guide for MOSFET scaling
Ng, K.K., Eshraghi, S.A., Stanik, T.D.
Published in IEEE transactions on electron devices (01.10.1993)
Published in IEEE transactions on electron devices (01.10.1993)
Get full text
Journal Article
Design and benchmarking of BCPMOS versus SCPMOS for an evolutionary 0.25-/spl mu/m CMOS technology
Vuong, H.-H., Eshraghi, S.A., Rafferty, C.S., Hillenius, S.J., Pinto, M.R., Diodato, P.W., Cong, H.-I., Zeitzoff, P.M.
Published in IEEE transactions on electron devices (01.04.1998)
Published in IEEE transactions on electron devices (01.04.1998)
Get full text
Journal Article
Design and benchmarking of BCPMOS versus SCPMOS for an evolutionary 0.25-μm CMOS technology
Vuong, H.-H., Eshraghi, S.A., Rafferty, C.S., Hillenius, S.J., Pinto, M.R., Diodato, P.W., Cong, H.-I., Zeitzoff, P.M.
Published in IEEE transactions on electron devices (01.04.1998)
Published in IEEE transactions on electron devices (01.04.1998)
Get full text
Journal Article
Explanation of reverse short channel effect by defect gradients
Rafferty, C.S., Vuong, H.-H., Eshraghi, S.A., Giles, M.D., Pinto, M.R., Hillenius, S.J.
Published in Proceedings of IEEE International Electron Devices Meeting (1993)
Published in Proceedings of IEEE International Electron Devices Meeting (1993)
Get full text
Conference Proceeding
Anomalous Short-channel Body Coefficients Due To Transient Enhanced Diffusion
Rafferty, C.S., Giles, M.-D., Vuong, H.-H., Eshraghi, S.A., Pinto, M.R., Hillenius, S.J.
Published in [Proceedings] 1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD) (1993)
Published in [Proceedings] 1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD) (1993)
Get full text
Conference Proceeding
Modeling C-V shifts in boron/BF/sub 2/-implanted capacitors
Vuong, H.-H., Rafferty, C.S., Mansfield, W., Luftman, H., Jacobson, D., Pinto, M.R., Eshraghi, S.A., McMacken, J.R., Ham, T.E.
Published in International Electron Devices Meeting. Technical Digest (1996)
Published in International Electron Devices Meeting. Technical Digest (1996)
Get full text
Conference Proceeding
A symmetric 0.25 /spl mu/m CMOS technology for low-power, high-performance ASIC applications using 248 nm DUV lithography
Boulin, D.M., Mansfield, W.M., O'Connor, K.J., Bevk, J., Brasen, D., Cheng, M., Cirelli, R.A., Eshraghi, S.A., Green, M.L., Guinn, K.V., Hillenius, S.J., Ibbotson, D.E., Jacobson, D.C., Kim, Y.O., King, C.A., Kistler, R.C., Klemens, F.P., Krisch, K.S., Kornblit, A., Lee, J.T.C., Manchanda, L., McNevin, S.C., Moccio, S.V., Monroe, D.P., Ng, K.K., O'Malley, M.L., Rafferty, C.S., Schwartz, G.P., Vaidya, S., Weber, G.R., Feldman, L.C., Pinto, M.R., Itani, T., Tounai, T., Kasama, K., Miyamoto, H., Ikawa, E., Hasagawa, E., Ishitani, A., Ito, H., Horiuchi, T., Saito, S., Nakamae, M.
Published in 1995 Symposium on VLSI Technology. Digest of Technical Papers (1995)
Published in 1995 Symposium on VLSI Technology. Digest of Technical Papers (1995)
Get full text
Conference Proceeding