The effect of AlN nucleation temperature on inverted pyramid defects in GaN layers grown on 200 mm silicon wafers
Charles, Matthew, Baines, Yannick, Bos, Sandra, Escoffier, René, Garnier, Gennie, Kanyandekwe, Joël, Lebreton, Julie, Vandendaele, William
Published in Journal of crystal growth (15.04.2017)
Published in Journal of crystal growth (15.04.2017)
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Journal Article
Effects of negative bias stress on trapping properties of AlGaN/GaN Schottky barrier diodes
Ferrandis, Philippe, Charles, Matthew, Gillot, Charlotte, Escoffier, René, Morvan, Erwan, Torres, Alphonse, Reimbold, Gilles
Published in Microelectronic engineering (25.06.2017)
Published in Microelectronic engineering (25.06.2017)
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Journal Article
Analytic Model of Threshold Voltage (VTH) Recovery in Fully Recessed Gate MOS-Channel HEMT (High Electron Mobility Transistor) after OFF-State Drain Stress
Escoffier, René, Mohamad, Blend, Buckley, Julien, Gwoziecki, Romain, Biscarrat, Jérome, Sousa, Véronique, Orsatelli, Marc, Marcault, Emmanuel, Ranc, Julien, Modica, Roberto, Iucolano, Ferdinando
Published in Energies (Basel) (01.02.2022)
Published in Energies (Basel) (01.02.2022)
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Journal Article
MOS-like approach for compact modeling of High-Electron-Mobility Transistor
Vaysset, Adrien, Martinie, Sebastien, Triozon, Francois, Rozeau, Olivier, Jaud, Marie-Anne, Escoffier, Rene, Poiroux, Thierry
Published in 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (23.09.2020)
Published in 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (23.09.2020)
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Conference Proceeding
발광 부품과 트랜지스터를 구비하는 광전자 소자
ESCOFFIER RENE, BONO HUBERT, ROBIN IVAN CHRISTOPHE, MORVAN ERWAN, CHARLES MATTHEW, BOUCHET THIERRY
Year of Publication 08.08.2018
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Year of Publication 08.08.2018
Patent
Design, implementation and characterization of an integrated current sensing in GaN HEMT device by using the current-mirroring technique
Nguyen, Van-Sang, Escoffier, Rene, Catellani, Stephane, FaYolle-Lecocq, Murielle, Martin, Jeremy
Published in 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe) (05.09.2022)
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Published in 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe) (05.09.2022)
Conference Proceeding