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Variation of the Surface States and Series Resistance Depending on Voltage, and Their Effects on the Electrical Features of a Schottky Structure with CdZnO Interface

by Erbilen Tanrıkulu, E., Taşçıoğlu, İ.
Published in Journal of electronic materials (01.04.2023)

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Correction: Frequency-dependent physical parameters, the voltage-dependent profile of surface traps, and their lifetime of Au/(ZnCdS-GO:PVP)/n-Si structures by using the conductance method

by Güçlü, Ç. Ş., Tanrıkulu, E. Erbilen, Ulusoy, M., Azizian-Kalandaragh, Yashar, Altındal, Ş.
Published in Journal of materials science. Materials in electronics (01.03.2024)

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Frequency-dependent physical parameters, the voltage-dependent profile of surface traps, and their lifetime of Au/(ZnCdS-GO:PVP)/n-Si structures by using the conductance method

by Güçlü, Ç. Ş., Tanrıkulu, E. Erbilen, Ulusoy, M., Kalandargh, Y. Azizian, Altındal, Ş.
Published in Journal of materials science. Materials in electronics (01.02.2024)

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A comparison of electrical characteristics of the Au/n-Si Schottky diodes with (ZnCdS:GO(1:1) and (ZnCdS:GO(1:0.5) doped PVP interlayer using current–voltage (I–V) and impedance–voltage (Z–V) measurements

by Güçlü, Ç. Ş., Tanrıkulu, E. Erbilen, Dere, A., Altındal, Ş., Azizian-Kalandaragh, Y.
Published in Journal of materials science. Materials in electronics (01.10.2023)

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Evaluation of the current transport mechanism depending on the temperature of Schottky structures with Ti:DLC interlayer

by Erbilen Tanrıkulu, E., Berkün, Ö., Ulusoy, M., Avar, B., Durmuş, H., Altındal, Ş.
Published in Materials today communications (01.03.2024)

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Journal Article

Variation of the Surface States and Series Resistance Depending on Voltage, and Their Effects on the Electrical Features of a Schottky Structure with CdZnO Interface

Correction: Frequency-dependent physical parameters, the voltage-dependent profile of surface traps, and their lifetime of Au/(ZnCdS-GO:PVP)/n-Si structures by using the conductance method

Frequency-dependent physical parameters, the voltage-dependent profile of surface traps, and their lifetime of Au/(ZnCdS-GO:PVP)/n-Si structures by using the conductance method

A comparison of electrical characteristics of the Au/n-Si Schottky diodes with (ZnCdS:GO(1:1) and (ZnCdS:GO(1:0.5) doped PVP interlayer using current–voltage (I–V) and impedance–voltage (Z–V) measurements

Evaluation of the current transport mechanism depending on the temperature of Schottky structures with Ti:DLC interlayer

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