An associative memory based on an electronic neural network architecture
Howard, R.E., Schwartz, D.B., Denker, J.S., Epworth, R.W., Graf, H.P., Hubbard, W.E., Jackel, L.D., Straughn, B.L., Tennant, D.M.
Published in IEEE transactions on electron devices (01.07.1987)
Published in IEEE transactions on electron devices (01.07.1987)
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Journal Article
Buried channel MOSFET's with gate lengths from 2.5 µm to 700 Å
Howard, R.E., Jackel, L.D., Swartz, R.G., Grabbe, P., Archer, V.D., Epworth, R.W., Hu, E.L., Tennant, D.M., Voshchenkov, A.M.
Published in IEEE electron device letters (01.10.1982)
Published in IEEE electron device letters (01.10.1982)
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Journal Article
700 Å Gate length buried channel Silicon MOSFET's
Swartz, R.G., Howard, R.E., Jackel, L.D., Grabbe, P., Epworth, R.W., Tennant, D.M., Archer, V.D.
Published in 1982 International Electron Devices Meeting (1982)
Published in 1982 International Electron Devices Meeting (1982)
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Conference Proceeding
Preliminary observation of 1-D effects in narrow Si MOSFET structures
Skocpol, W.J., Voshchenkov, A.M., Howard, R.E., Hu, E.L., Jackel, L.D., Epworth, R.W., Fetter, L.A., Grabbe, P., Tennant, D.M.
Published in Physica B + C (1982)
Published in Physica B + C (1982)
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Journal Article
High transconductance InAlAs/InGaAs double heterostructure MESFETs with in-situ aluminum oxide gate barrier
Chang, T.Y., Behringer, R.E., Howard, R.E., Liao, A.S.H., Jackel, L.D., Caridi, E.A., Skocpol, W.J., Epworth, R.W.
Published in 1984 International Electron Devices Meeting (1984)
Published in 1984 International Electron Devices Meeting (1984)
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Conference Proceeding
Preliminary observation of 1-D effects in narrow Si Mosfet structures
Skocpol, W.J., Voshchenkov, A.M., Howard, R.E., Hu, E.L., Jackel, L.D., Epworth, R.W., Fetter, L.A., Grabbe, P., Tennant, D.M.
Published in Physica B + C (01.07.1982)
Published in Physica B + C (01.07.1982)
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Journal Article