Low-temperature (4.2–9K) transport along InAs-AlSb quantum wells with δ-doped barriers and superconducting niobium electrodes
Nguyen, Chanh, Kroemer, Herbert, Hu, Evelyn L., English, John H.
Published in Journal of crystal growth (01.02.1993)
Published in Journal of crystal growth (01.02.1993)
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Conference Proceeding
Growth and doping of heterostructures for high electron mobilities
Gossard, Arthur C., English, John H., Miller, Mark, Simes, Robert J.
Published in Journal of crystal growth (01.02.1989)
Published in Journal of crystal growth (01.02.1989)
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Quantum-well resonant tunneling bipolar transistor operating at room temperature
Capasso, F., Sen, S., Gossard, A.C., Hutchinson, A.L., English, J.H.
Published in IEEE electron device letters (01.10.1986)
Published in IEEE electron device letters (01.10.1986)
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Method of controlling multi-species epitaxial deposition
ENGLISH; JOHN H, TOFTE; JAN ARILD, PINSUKANJANA; PAUL RUENGRIT, GOSSARD; ARTHUR CHARLES, JACKSON; ANDREW WILLIAM
Year of Publication 14.03.2000
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Year of Publication 14.03.2000
Patent
Method of controlling multi-species epitaxial deposition
ENGLISH; JOHN H, TOFTE; JAN ARILD, PINSUKANJANA; PAUL RUENGRIT, GOSSARD; ARTHUR CHARLES, JACKSON; ANDREW WILLIAM
Year of Publication 10.08.1999
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Year of Publication 10.08.1999
Patent
Quantum well resonant tunneling bipolar transistor operating at room temperature
Capasso, F., Sen, S., Gossard, A.C., Hutchinson, A.L., English, J.H.
Published in 1986 International Electron Devices Meeting (1986)
Published in 1986 International Electron Devices Meeting (1986)
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