Insertion Layer Thickness Dependence of Magnetic and Electrical Properties for Double-CoFeB/MgO-Interface Magnetic Tunnel Junctions
Miura, S., Nguyen, T. V. A., Endoh, Y., Sato, H., Ikeda, S., Nishioka, K., Honjo, H., Endoh, T.
Published in IEEE transactions on magnetics (01.07.2019)
Published in IEEE transactions on magnetics (01.07.2019)
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Influence of Iridium Sputtering Conditions on the Magnetic Properties of Co/Pt-Based Iridium-Synthetic Antiferromagnetic Coupling Reference Layer
Honjo, H., Naganuma, H., Nishioka, K., Nguyen, T. V. A., Yasuhira, M., Ikeda, S., Endoh, T.
Published in IEEE transactions on magnetics (01.08.2022)
Published in IEEE transactions on magnetics (01.08.2022)
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Novel Quad-Interface MTJ Technology and its First Demonstration With High Thermal Stability Factor and Switching Efficiency for STT-MRAM Beyond 2X nm
Nishioka, K., Sato, H., Endoh, T., Honjo, H., Ikeda, S., Watanabe, T., Miura, S., Inoue, H., Tanigawa, T., Noguchi, Y., Yasuhira, M.
Published in IEEE transactions on electron devices (01.03.2020)
Published in IEEE transactions on electron devices (01.03.2020)
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Effect of Magnetic Coupling Between Two CoFeB Layers on Thermal Stability in Perpendicular Magnetic Tunnel Junctions With MgO/CoFeB/Insertion Layer/CoFeB/MgO Free Layer
Nishioka, K., Miura, S., Honjo, H., Naganuma, H., Nguyen, T. V. A., Watanabe, T., Ikeda, S., Endoh, T.
Published in IEEE transactions on magnetics (01.02.2022)
Published in IEEE transactions on magnetics (01.02.2022)
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First Demonstration of 25-nm Quad Interface p-MTJ Device With Low Resistance-Area Product MgO and Ten Years Retention for High Reliable STT-MRAM
Nishioka, K., Miura, S., Honjo, H., Inoue, H., Watanabe, T., Nasuno, T., Naganuma, H., Nguyen, T. V. A., Noguchi, Y., Yasuhira, M., Ikeda, S., Endoh, T.
Published in IEEE transactions on electron devices (01.06.2021)
Published in IEEE transactions on electron devices (01.06.2021)
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Perpendicular Magnetic Tunnel Junctions With Four Anti-Ferromagnetically Coupled Co/Pt Pinning Layers
Honjo, H., Nishioka, K., Miura, S., Naganuma, H., Watanabe, T., Noguchi, Y., Nguyen, T. V. A., Yasuhira, M., Ikeda, S., Endoh, T.
Published in IEEE transactions on magnetics (01.02.2022)
Published in IEEE transactions on magnetics (01.02.2022)
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How a Small Reef in the Kuroshio Cultivates the Ocean
Hasegawa, D., Matsuno, T., Tsutsumi, E., Senjyu, T., Endoh, T., Tanaka, T., Yoshie, N., Nakamura, H., Nishina, A., Kobari, T., Nagai, T., Guo, X.
Published in Geophysical research letters (16.04.2021)
Published in Geophysical research letters (16.04.2021)
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Structural Analysis of CoFeB/MgO-Based Perpendicular MTJs With Junction Size of 20 nm by STEM Tomography
Niwa, M., Kimura, K., Naijo, T., Oshurahunov, A., Nagamachi, S., Inoue, H., Honjo, H., Ikeda, S., Endoh, T.
Published in IEEE transactions on magnetics (01.02.2021)
Published in IEEE transactions on magnetics (01.02.2021)
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Ultrafast spin–orbit torque-induced magnetization switching in a 75°-canted magnetic tunnel junction
Nguyen, T. V. A., Naganuma, H., Honjo, H., Ikeda, S., Endoh, T.
Published in AIP advances (01.02.2024)
Published in AIP advances (01.02.2024)
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Influence of Hard Mask Materials on the Magnetic Properties of Perpendicular MTJs With Double CoFeB/MgO Interface
Honjo, H., Niwa, M., Nishioka, K., Nguyen, T. V. A., Naganuma, H., Endo, Y., Yasuhira, M., Ikeda, S., Endoh, T.
Published in IEEE transactions on magnetics (01.08.2020)
Published in IEEE transactions on magnetics (01.08.2020)
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Magnetic properties of Co film in Pt/Co/Cr2O3/Pt structure
Nguyen, T. V. A., Shiratsuchi, Y., Sato, H., Ikeda, S., Endoh, T., Endo, Y.
Published in AIP advances (01.01.2020)
Published in AIP advances (01.01.2020)
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Impact of Tungsten Sputtering Condition on Magnetic and Transport Properties of Double-MgO Magnetic Tunneling Junction With CoFeB/W/CoFeB Free Layer
Honjo, H., Ikeda, S., Sato, H., Nishioka, K., Watanabe, T., Miura, S., Nasuno, T., Noguchi, Y., Yasuhira, M., Tanigawa, T., Koike, H., Inoue, H., Muraguchi, M., Niwa, M., Ohno, H., Endoh, T.
Published in IEEE transactions on magnetics (01.11.2017)
Published in IEEE transactions on magnetics (01.11.2017)
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Improvement of Thermal Tolerance of CoFeB-MgO Perpendicular-Anisotropy Magnetic Tunnel Junctions by Controlling Boron Composition
Honjo, H., Ikeda, S., Sato, H., Sato, S., Watanabe, T., Miura, S., Nasuno, T., Noguchi, Y., Yasuhira, M., Tanigawa, T., Koike, H., Muraguchi, M., Niwa, M., Ito, K., Ohno, H., Endoh, T.
Published in IEEE transactions on magnetics (01.07.2016)
Published in IEEE transactions on magnetics (01.07.2016)
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Design of a variation-resilient single-ended non-volatile six-input lookup table circuit with a redundant-magnetic tunnel junction-based active load for smart Internet-of-things applications
Suzuki, D, Natsui, M, Ikeda, S, Endoh, T, Ohno, H, Hanyu, T
Published in Electronics letters (30.03.2017)
Published in Electronics letters (30.03.2017)
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Study of Sb template for heteroepitaxial growth of GaSb thin film on Si(111)substrate
Toyota, H., Okabe, A., Endoh, T., Jinbo, Y., Uchitomi, N.
Published in Journal of crystal growth (01.09.2013)
Published in Journal of crystal growth (01.09.2013)
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Conference Proceeding
Design and fabrication of a perpendicular magnetic tunnel junction based nonvolatile programmable switch achieving 40% less area using shared-control transistor structure
Suzuki, D, Natsui, M, Mochizuki, A, Miura, S, Honjo, H, Kinoshita, K, Fukami, S, Sato, H, Ikeda, S, Endoh, T, Ohno, H, Hanyu, T
Published in Journal of applied physics (07.05.2014)
Published in Journal of applied physics (07.05.2014)
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Effect of surface modification treatment on top-pinned MTJ with perpendicular easy axis
Honjo, H., Naganuma, H., Nguyen, T. V. A., Inoue, H., Yasuhira, M., Ikeda, S., Endoh, T.
Published in AIP advances (01.02.2021)
Published in AIP advances (01.02.2021)
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