Competitive and cost effective high-k based 28nm CMOS technology for low power applications
Arnaud, F., Thean, A., Eller, M., Lipinski, M., Teh, Y.W., Ostermayr, M., Kang, K., Kim, N.S., Ohuchi, K., Han, J.-P., Nair, D.R., Lian, J., Uchimura, S., Kohler, S., Miyaki, S., Ferreira, P., Park, J.-H., Hamaguchi, M., Miyashita, K., Augur, R., Zhang, Q., Strahrenberg, K., ElGhouli, S., Bonnouvrier, J., Matsuoka, F., Lindsay, R., Sudijono, J., Johnson, F.S., Ku, J.H., Sekine, M., Steegen, A., Sampson, R.
Published in 2009 IEEE International Electron Devices Meeting (IEDM) (01.12.2009)
Published in 2009 IEEE International Electron Devices Meeting (IEDM) (01.12.2009)
Get full text
Conference Proceeding