Fluorine-vacancy complexes in Si-SiGe-Si structures
Abdulmalik, D. A., Coleman, P. G., El Mubarek, H. A. W., Ashburn, P.
Published in Journal of applied physics (01.07.2007)
Published in Journal of applied physics (01.07.2007)
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Journal Article
Effect of fluorine implantation dose on boron thermal diffusion in silicon
El Mubarek, H. A. W., Bonar, J. M, Dilliway, G. D., Ashburn, P., Karunaratne, M., Willoughby, A. F., Wang, Y., Hemment, P. L. F., Price, R., Zhang, J., Ward, P.
Published in Journal of applied physics (15.10.2004)
Published in Journal of applied physics (15.10.2004)
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Journal Article
SiGe HBTs on bonded SOI incorporating buried silicide layers
Bain, M., El Mubarek, H.A.W., Bonar, J.M., Wang, Y., Buiu, O., Gamble, H., Armstrong, B.M., Hemment, P.L.F., Hall, S., Ashburn, P.
Published in IEEE transactions on electron devices (01.03.2005)
Published in IEEE transactions on electron devices (01.03.2005)
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Journal Article
Electrical and materials characterization of GSMBE grown Si1−x−yGexCy layers for heterojunction bipolar transistor applications
Mitrovic, I Z, Buiu, O, Hall, S, Zhang, J, Wang, Y, Hemment, P L F, El Mubarek, H A W, Ashburn, P
Published in Semiconductor science and technology (01.01.2005)
Published in Semiconductor science and technology (01.01.2005)
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Journal Article
GSMBE growth and structural characterisation of SiGeC layers for HBT
Zhang, J., Neave, J.H., Li, X.B., Fewster, P.F., El Mubarek, H.A.W., Ashburn, P., Mitrovic, I.Z., Buiu, O., Hall, S.
Published in Journal of crystal growth (01.05.2005)
Published in Journal of crystal growth (01.05.2005)
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Journal Article
Conference Proceeding
Formation of F6V2 complexes in F-implanted Ge determined by x-ray absorption near edge structure spectroscopy
Sanson, A., El Mubarek, H.A.W., Gandy, A.S., De Salvador, D., Napolitani, E., Carnera, A.
Published in Materials science in semiconductor processing (01.05.2017)
Published in Materials science in semiconductor processing (01.05.2017)
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Journal Article
Positron annihilation studies of fluorine-vacancy complexes in Si and SiGe
Edwardson, C. J., Coleman, P. G., El Mubarek, H. A. W., Gandy, A. S.
Published in Journal of applied physics (01.04.2012)
Published in Journal of applied physics (01.04.2012)
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Journal Article
SiGe HBTs on bonded wafer substrates
Hall, S, Lamb, A.C, Bain, M, Armstrong, B.M, Gamble, H, El Mubarek, H.A.W, Ashburn, P
Published in Microelectronic engineering (01.11.2001)
Published in Microelectronic engineering (01.11.2001)
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Journal Article
Conference Proceeding
Non-selective growth of SiGe heterojunction bipolar trasistor[transistor] layers at 700°C with dual control of n- and p-type dopant profiles
EL MUBAREK, H. A. W, BONAR, J. M, ASHBURN, P, WANG, Y, HEMMENT, P, BUIU, O, HALL, S
Published in Journal of materials science. Materials in electronics (01.05.2003)
Published in Journal of materials science. Materials in electronics (01.05.2003)
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Conference Proceeding
Journal Article
Effect of fluorine on boron diffusion under interstitial injection from the surface
Kham, M.N., El Mubarek, H.A.W., Bonar, J.M., Chivers, D., Ashburn, P.
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.12.2006)
Published in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (01.12.2006)
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Journal Article
Electrical and materials characterization of GSMBE grown Si 1− x − y Ge x C y layers for heterojunction bipolar transistor applications
Mitrovic, I Z, Buiu, O, Hall, S, Zhang, J, Wang, Y, Hemment, P L F, Mubarek, H A W El, Ashburn, P
Published in Semiconductor science and technology (01.01.2005)
Published in Semiconductor science and technology (01.01.2005)
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Journal Article
Non-selective growth of SiGe heterojunction bipolar transistor layers at 700DGC with dual control of n- and p-type dopant profiles
El Mubarek, H. A. W., Bonar, J M, Ashburn, P, Wang, Y, Hemment, P, Buiu, O, Hall, S
Published in Journal of materials science. Materials in electronics (01.05.2003)
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Published in Journal of materials science. Materials in electronics (01.05.2003)
Journal Article
110-GHz fT silicon bipolar transistors implemented using fluorine implantation for boron diffusion suppression
KHAM, M. N, EL MUBAREK, H. A. W, BONAR, J. M, ASHBURN, Peter, WARD, P, FIORE, L, PETRALIA, R, ALEMANNI, C, MESSINA, A
Published in IEEE transactions on electron devices (01.03.2006)
Published in IEEE transactions on electron devices (01.03.2006)
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Journal Article
Effect of fluorine implantation dose on boron transient enhanced diffusion and boron thermal diffusion in Si1-xGex
EL MUBAREK, H. A. W, KARUNARATNE, M, BONAR, J. M, DILLIWAY, G. D, WANG, Y, HEMMENT, P. L. F, WILLOUGHBY, A. F, ASHBURN, P
Published in IEEE transactions on electron devices (01.04.2005)
Published in IEEE transactions on electron devices (01.04.2005)
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Journal Article
The base current and related 1/ f noise for SiGe HBTs realized by SEG/NSEG technology on SOI and bulk substrates
Lukyanchikova, N., Garbar, N., Smolanka, A., Lokshin, M., Hall, S., Buiu, O., Mitrovic, I.Z., El Mubarek, H.A.W., Ashburn, P.
Published in Materials science in semiconductor processing (01.08.2006)
Published in Materials science in semiconductor processing (01.08.2006)
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Conference Proceeding