Electrical characteristics of gated‐anode diodes based on normally‐off GaN HEMT structures for rectenna applications
Takahashi, Hidemasa, Ando, Yuji, Tsuchiya, Yoichi, Wakejima, Akio, Hayashi, Hiroaki, Yagyu, Eiji, Kikkawa, Koichi, Sakai, Naoki, Itoh, Kenji, Suda, Jun
Published in Electronics letters (01.10.2021)
Published in Electronics letters (01.10.2021)
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Journal Article
Mode-evolution-based polarization rotator-splitter design via simple fabrication process
Yuan, Wangqing, Kojima, Keisuke, Wang, Bingnan, Koike-Akino, Toshiaki, Parsons, Kieran, Nishikawa, Satoshi, Yagyu, Eiji
Published in Optics express (23.04.2012)
Published in Optics express (23.04.2012)
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Journal Article
Effect of high-temperature annealing for single-Ni-layer gate in AlGaN/GaN high-electron-mobility transistors
Nanjo, Takuma, Imai, Akifumi, Kurahashi, Kenichiro, Matsuda, Takashi, Suita, Muneyoshi, Yagyu, Eiji
Published in Japanese Journal of Applied Physics (01.05.2016)
Published in Japanese Journal of Applied Physics (01.05.2016)
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Journal Article
Normally-off AlGaN/GaN high-electron-mobility transistor using digital etching technique
Yamanaka, Ryota, Kanazawa, Toru, Yagyu, Eiji, Miyamoto, Yasuyuki
Published in Japanese Journal of Applied Physics (01.06.2015)
Published in Japanese Journal of Applied Physics (01.06.2015)
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Journal Article
Design and Characteristics of Guardring-Free Planar AlInAs Avalanche Photodiodes
Yagyu, E., Ishimura, E., Nakaji, M., Ihara, S., Mikami, Y., Itamoto, H., Aoyagi, T., Yoshiara, K., Tokuda, Y.
Published in Journal of lightwave technology (15.04.2009)
Published in Journal of lightwave technology (15.04.2009)
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Journal Article
Degradation Mode Analysis on Highly Reliable Guardring-Free Planar InAlAs Avalanche Photodiodes
Ishimura, E., Yagyu, E., Nakaji, M., Ihara, S., Yoshiara, K., Aoyagi, T., Tokuda, Y., Ishikawa, T.
Published in Journal of lightwave technology (01.12.2007)
Published in Journal of lightwave technology (01.12.2007)
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Journal Article
AlGaN/GaN-Based Multimetal Gated High-Electron-Mobility Transistor With Improved Linearity
Azad, Md. Tasnim, Hossain, Toiyob, Sikder, Bejoy, Xie, Qingyun, Yuan, Mengyang, Yagyu, Eiji, Teo, Koon Hoo, Palacios, Tomas, Chowdhury, Nadim
Published in IEEE transactions on electron devices (01.11.2023)
Published in IEEE transactions on electron devices (01.11.2023)
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Journal Article
Planar Avalanche Photodiode for Long-Haul Single-Photon Optic Fiber Communications
Yagyu, Eiji, Sugihara, Kohei, Nishioka, Tsuyoshi, Matsui, Mitsuru, Yoshiara, Kiichi, Tokuda, Yasunori
Published in Applied physics express (01.01.2008)
Published in Applied physics express (01.01.2008)
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Journal Article
AlGaN Channel HEMT With Extremely High Breakdown Voltage
Nanjo, T., Imai, A., Suzuki, Y., Abe, Y., Oishi, T., Suita, M., Yagyu, E., Tokuda, Y.
Published in IEEE transactions on electron devices (01.03.2013)
Published in IEEE transactions on electron devices (01.03.2013)
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Journal Article
An MMI-based wavelength combiner employing non-uniform refractive index distribution
Singh, Siddharth, Kojima, Keisuke, Koike-Akino, Toshiaki, Wang, Bingnan, Parsons, Kieran, Nishikawa, Satoshi, Yagyu, Eiji
Published in Optics express (07.04.2014)
Published in Optics express (07.04.2014)
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Journal Article
Trapping Phenomena in GaN HEMTs with Fe- and C-doped Buffer
Li, Kexin, Matsuda, Takashi, Yagyu, Eiji, Teo, Koon Hoo, Rakheja, Shaloo
Published in 2022 Device Research Conference (DRC) (26.06.2022)
Published in 2022 Device Research Conference (DRC) (26.06.2022)
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Conference Proceeding
Compact modeling of gate leakage phenomenon in GaN HEMTs
Li, Kexin, Yagyu, Eiji, Saito, Hisashi, Teo, Koon Hoo, Rakheja, Shaloo
Published in 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (23.09.2020)
Published in 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (23.09.2020)
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Conference Proceeding
An MMI-based polarization splitter using patterned metal and tilted joint
Kojima, Keisuke, Yuan, Wangqing, Wang, Bingnan, Koike-Akino, Toshiaki, Parsons, Kieran, Nishikawa, Satoshi, Yagyu, Eiji
Published in Optics express (10.12.2012)
Published in Optics express (10.12.2012)
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Journal Article
Submicron local and time-dependent thermal resistance characterization of GaN HEMTs
Kendig, Dustin, Yagyu, Eiji, Yazawa, Kazuaki, Shakouri, Ali
Published in 2018 34th Thermal Measurement, Modeling & Management Symposium (SEMI-THERM) (01.03.2018)
Published in 2018 34th Thermal Measurement, Modeling & Management Symposium (SEMI-THERM) (01.03.2018)
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Conference Proceeding
Application of numerical optimization to the design of InP-based wavelength combiners
Özbayat, Selman, Kojima, Keisuke, Koike-Akino, Toshiaki, Wang, Bingnan, Parsons, Kieran, Singh, Siddharth, Nishikawa, Satoshi, Yagyu, Eiji
Published in Optics communications (01.07.2014)
Published in Optics communications (01.07.2014)
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Journal Article
Enhancement of Drain Current by an AlN Spacer Layer Insertion in AlGaN/GaN High-Electron-Mobility Transistors with Si-Ion-Implanted Source/Drain Contacts
Nanjo, Takuma, Motoya, Tsukasa, Imai, Akihumi, Suzuki, Yosuke, Shiozawa, Katsuomi, Suita, Muneyoshi, Oishi, Toshiyuki, Abe, Yuji, Yagyu, Eiji, Yoshiara, Kiichi, Tokuda, Yasunori
Published in Japanese Journal of Applied Physics (01.06.2011)
Published in Japanese Journal of Applied Physics (01.06.2011)
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Journal Article