Normally-Off p-Gate Transistor Based on AlGaN/GaN Heterostructures
Egorkin, V. I., Bespalov, V. A., Zaitsev, A. A., Zemlyakov, V. E., Kapaev, V. V., Kukhtyaeva, O. B.
Published in Semiconductors (Woodbury, N.Y.) (01.12.2021)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2021)
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Journal Article
Investigation of the Effect of Atomic Composition on the Plasma-Chemical Etching Rate of Silicon Nitride in High-Power Transistors Based on an AlGaN/GaN Heterojunction
Garmash, V. I., Zemlyakov, V. E., Egorkin, V. I., Kovalchuk, A. V., Shapoval, S. Y.
Published in Semiconductors (Woodbury, N.Y.) (01.08.2020)
Published in Semiconductors (Woodbury, N.Y.) (01.08.2020)
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Journal Article
GaN power IC normally-on and normally-off transistors technology and simulation
Egorkin, V I, Bespalov, V A, Kukhtyaeva, O B, Zemlyakov, V E, Kapaev, V V, Zaitsev, A A
Published in Journal of physics. Conference series (01.12.2021)
Published in Journal of physics. Conference series (01.12.2021)
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Journal Article
Effect of crystal orientation on the implant profile and resistance of SiC
Egorkin, V I, Nezhentsev, A V, Zemlyakov, V E, Gudkov, V A, Garmash, V I
Published in Journal of physics. Conference series (01.12.2019)
Published in Journal of physics. Conference series (01.12.2019)
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Journal Article
Simulation of a Normally-off HEMT Transistor Based on a GaN/AlGaN with a p-Gate
Egorkin, V. I., Zemlyakov, V. E., Kapaev, V. V., Kukhtyaeva, O. B.
Published in Russian microelectronics (01.11.2020)
Published in Russian microelectronics (01.11.2020)
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Journal Article
Diffusion theory and optimization of ohmic contacts to n-layer of bipolar nanoheterostructures
Nezhentsev, A V, Zemlyakov, V E, Egorkin, V I, Garmash, V I
Published in Journal of physics. Conference series (01.11.2017)
Published in Journal of physics. Conference series (01.11.2017)
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Journal Article
Ohmic contacts to n-type 4H- and 6H-SiC
Egorkin, V I, Nezhentsev, A V, Zemlyakov, V E, Gudkov, V A, Garmash, V I
Published in Journal of physics. Conference series (01.12.2018)
Published in Journal of physics. Conference series (01.12.2018)
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Journal Article
Developing of normally-off p-GaN gate HEMT
Kukhtyaeva, O B, Egorkin, V I, Zemlyakov, V E, Kapaev, V V, Zaitsev, A A, Tsatsulnikov, A F, Nikolaev, A E, Sakharov, A V
Published in Journal of physics. Conference series (01.12.2019)
Published in Journal of physics. Conference series (01.12.2019)
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Journal Article
Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors
Malin, T. V., Milakhin, D. S., Aleksandrov, I. A., Zemlyakov, V. E., Egorkin, V. I., Zaitsev, A. A., Protasov, D. Yu, Kozhukhov, A. S., Ber, B. Ya, Kazantsev, D. Yu, Mansurov, V. G., Zhuravlev, K. S.
Published in Technical physics letters (01.08.2019)
Published in Technical physics letters (01.08.2019)
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Journal Article
Ultraviolet light-emitting diodes and photodiodes grown by plasma-assisted molecular beam epitaxy
Nechaev, D V, Evropeytsev, E A, Semenov, A N, Troshkov, S I, Egorkin, V I, Zemlyakov, V E, Rzheutski, M V, Lutsenko, E V, Toropov, A A, Ivanov, S V, Jmerik, V N
Published in Journal of physics. Conference series (01.03.2018)
Published in Journal of physics. Conference series (01.03.2018)
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Journal Article
AlGaAs/GaAs HBTs with C-doped base and undoped emitter-base spacer layer
Bobrov, M A, Maleev, N A, Kuzmenkov, A G, Blokhin, S A, Vasil'ev, A P, Egorkin, V I, Zemlyakov, V E, Ustinov, V M
Published in Journal of physics. Conference series (01.11.2017)
Published in Journal of physics. Conference series (01.11.2017)
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Journal Article
Effect of 4H-SiC Target Temperature under Ion Irradiation on the Distribution Profile of Al+ Ions
Shemukhin, A. A., Evseev, A. P., Kozhemiako, A. V., Merzuk, B., Egorkin, V. I., Fedotov, Yu. S., Danilov, A. V., Chernysh, V. S.
Published in Moscow University physics bulletin (01.11.2019)
Published in Moscow University physics bulletin (01.11.2019)
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Journal Article
Optimization of ohmic contacts to n-GaAs layers of heterobipolar nanoheterostructures
Egorkin, V. I., Zemlyakov, V. E., Nezhentsev, A. V., Garmash, V. I.
Published in Russian microelectronics (01.07.2017)
Published in Russian microelectronics (01.07.2017)
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Journal Article
effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis
Tsatsulnikov, A. F., Lundin, V. W., Zavarin, E. E., Yagovkina, M. A., Sakharov, A. V., Usov, S. O., Zemlyakov, V. E., Egorkin, V. I., Bulashevich, K. A., Karpov, S. Yu, Ustinov, V. M.
Published in Semiconductors (Woodbury, N.Y.) (01.10.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2016)
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Journal Article
AlN/GaN heterostructures for normally-off transistors
Zhuravlev, K. S., Malin, T. V., Mansurov, V. G., Tereshenko, O. E., Abgaryan, K. K., Reviznikov, D. L., Zemlyakov, V. E., Egorkin, V. I., Parnes, Ya. M., Tikhomirov, V. G., Prosvirin, I. P.
Published in Semiconductors (Woodbury, N.Y.) (01.03.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.03.2017)
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Journal Article