MBE growth of GaInAsSb/AlGaAsSb double heterostructures for infrared diode lasers
Get full text
Journal Article
Conference Proceeding
Low-threshold GaInAsSb/AlGaAsSb quantum-well ridge-waveguide lasers emitting at 2.1 mu m
Choi, H.K., Eglash, S.J., Connors, M.K.
Published in IEEE transactions on electron devices (01.11.1992)
Published in IEEE transactions on electron devices (01.11.1992)
Get full text
Journal Article
GaInAsSb-AlGaAsSb tapered lasers emitting a 2 [mu]m
Choi, H.K., Walpole, J.N., Turner, G.W., Eglash, S.J., Missaggia, L.J., Connors, M.K.
Published in IEEE photonics technology letters (01.10.1993)
Published in IEEE photonics technology letters (01.10.1993)
Get full text
Journal Article
Effect of lattice-mismatched growth on InAs/AlSb resonant-tunneling diodes
Brown, E.R., Eglash, S.J., Turner, G.W., Parker, C.D., Pantano, J.V., Calawa, D.R.
Published in IEEE transactions on electron devices (01.06.1994)
Published in IEEE transactions on electron devices (01.06.1994)
Get full text
Journal Article
Application of frequency-domain analysis to RHEED oscillation data: time dependence of AlGaAs growth rates
Get full text
Journal Article
Conference Proceeding
Electrical properties of MBE grown layers of AlGaAsSb and the effects of proton implantation and hydrogen plasma treatment
Polyakov, A.Y., Eglash, S.J., Milnes, A.G., Ye, M., Pearton, S.J., Wilson, R.G.
Published in Journal of crystal growth (01.02.1993)
Published in Journal of crystal growth (01.02.1993)
Get full text
Journal Article
Conference Proceeding
VIB-7 improved physics of ohmic contacts to semiconductors
Shenai, K., Dutton, R.W., Eglash, S.J.
Published in IEEE transactions on electron devices (01.11.1986)
Published in IEEE transactions on electron devices (01.11.1986)
Get full text
Journal Article
Band offsets in GaSb/AlGaAsSb: Correlation with the Schottky barrier height and the depth of native acceptors
Polyakov, A.Y., Milnes, A.G., Eglash, S.J., Ye, M., Bochkarev, A.E.
Published in Solid-state electronics (01.04.1993)
Published in Solid-state electronics (01.04.1993)
Get full text
Journal Article
GaInAsSb-AlGaAsSb tapered lasers emitting at 2 mu m
Choi, H.K., Walpole, J.N., Turner, G.W., Eglash, S.J., Missaggia, L.J., Conners, M.K.
Published in IEEE photonics technology letters (01.10.1993)
Published in IEEE photonics technology letters (01.10.1993)
Get full text
Journal Article
IVB-10 engineered Al - GaAs Schottky barrier heights by MBE
Eglash, S.J., Shihong Pan, Spicer, W.E., Collins, D.M.
Published in IEEE transactions on electron devices (01.10.1982)
Published in IEEE transactions on electron devices (01.10.1982)
Get full text
Journal Article
Schottky barriers on atomically clean cleaved GaAs
Newman, N., Kendelewicz, T., Thomson, D., Pan, S.H., Eglash, S.J., Spicer, W.E.
Published in Solid-state electronics (01.01.1985)
Published in Solid-state electronics (01.01.1985)
Get full text
Journal Article
Field-enhanced tunneling and barrier lowering in Al-n+GaAs-nGaAs Schottky contacts grown by MBE
Shenai, K., Eglash, S.J., Dutton, R.W., Zurakowski, M.P., Spicer, W.E.
Published in IEEE electron device letters (01.08.1984)
Published in IEEE electron device letters (01.08.1984)
Get full text
Journal Article
Barrier heights from ohmic to bandgap: Modified Al:GaAs Schottky diodes by MBE
Eglash, S.J., Newman, N., Shihong Pan, Spicer, W.E., Collins, D.M., Zurakowski, M.P.
Published in 1983 International Electron Devices Meeting (1983)
Published in 1983 International Electron Devices Meeting (1983)
Get full text
Conference Proceeding