Silicon Carbide as a Platform for Power Electronics
Eddy, C. R., Gaskill, D. K.
Published in Science (American Association for the Advancement of Science) (12.06.2009)
Published in Science (American Association for the Advancement of Science) (12.06.2009)
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Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN
Feigelson, B.N., Anderson, T.J., Abraham, M., Freitas, J.A., Hite, J.K., Eddy, C.R., Kub, F.J.
Published in Journal of crystal growth (01.07.2012)
Published in Journal of crystal growth (01.07.2012)
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Conference Proceeding
Activation of Mg implanted in GaN by multicycle rapid thermal annealing
Anderson, T.J, Feigelson, B.N, Kub, F.J, Tadjer, M.J, Hobart, K.D, Mastro, M.A, Hite, J.K, Eddy, C.R
Published in Electronics letters (30.01.2014)
Published in Electronics letters (30.01.2014)
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Low-Phase-Noise Graphene FETs in Ambipolar RF Applications
Moon, J S, Curtis, D, Zehnder, D, Kim, S, Gaskill, D K, Jernigan, G G, Myers-Ward, R L, Eddy, C R, Campbell, P M, Lee, K.-M, Asbeck, P
Published in IEEE electron device letters (01.03.2011)
Published in IEEE electron device letters (01.03.2011)
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Bilayer Graphene Grown on 4H-SiC (0001) Step-Free Mesas
Nyakiti, L.O, Myers-Ward, R. L, Wheeler, V. D, Imhoff, E. A, Bezares, F.J, Chun, H, Caldwell, J. D, Friedman, A. L, Matis, B. R, Baldwin, J. W, Campbell, P. M, Culbertson, J. C, Eddy, C. R, Jernigan, G. G, Gaskill, D. K
Published in Nano letters (11.04.2012)
Published in Nano letters (11.04.2012)
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Top-Gated Epitaxial Graphene FETs on Si-Face SiC Wafers With a Peak Transconductance of 600 mS/mm
Moon, J.S., Curtis, D., Bui, S., Hu, M., Gaskill, D.K., Tedesco, J.L., Asbeck, P., Jernigan, G.G., VanMil, B.L., Myers-Ward, R.L., Eddy, C.R., Campbell, P.M., Weng, X.
Published in IEEE electron device letters (01.04.2010)
Published in IEEE electron device letters (01.04.2010)
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Polarization selection rules for inter-Landau-level transitions in epitaxial graphene revealed by the infrared optical Hall effect
Kühne, P, Darakchieva, V, Yakimova, R, Tedesco, J D, Myers-Ward, R L, Eddy, Jr, C R, Gaskill, D K, Herzinger, C M, Woollam, J A, Schubert, M, Hofmann, T
Published in Physical review letters (16.08.2013)
Published in Physical review letters (16.08.2013)
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Multilayer graphene, Moiré patterns, grain boundaries and defects identified by scanning tunneling microscopy on the m-plane, non-polar surface of SiC
Xu, P., Qi, D., Schoelz, J.K., Thompson, J., Thibado, P.M., Wheeler, V.D., Nyakiti, L.O., Myers-Ward, R.L., Eddy, C.R., Gaskill, D.K., Neek-Amal, M., Peeters, F.M.
Published in Carbon (New York) (01.12.2014)
Published in Carbon (New York) (01.12.2014)
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GaN vertical and lateral polarity heterostructures on GaN substrates
Hite, J.K., Bassim, N.D., Twigg, M.E., Mastro, M.A., Kub, F.J., Eddy, C.R.
Published in Journal of crystal growth (01.10.2011)
Published in Journal of crystal growth (01.10.2011)
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Competing scanning tunneling microscope tip-interlayer interactions for twisted multilayer graphene on the a-plane SiC surface
Xu, P., Ackerman, M.L., Barber, S.D., Schoelz, J.K., Thibado, P.M., Wheeler, V.D., Nyakiti, L.O., Myers-Ward, R.L., Eddy, C.R., Gaskill, D.K.
Published in Surface science (01.11.2013)
Published in Surface science (01.11.2013)
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Assembly of phosphonic acids on GaN and AlGaN
Simpkins, B S, Hong, S, Stine, R, Mäkinen, A J, Theodore, N D, Mastro, M A, Eddy, C R, Pehrsson, P E
Published in Journal of physics. D, Applied physics (13.01.2010)
Published in Journal of physics. D, Applied physics (13.01.2010)
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Investigation of the Epitaxial Graphene/p-SiC Heterojunction
Anderson, T. J., Hobart, K. D., Nyakiti, L. O., Wheeler, V. D., Myers-Ward, R. L., Caldwell, J. D., Bezares, F. J., Jernigan, G. G., Tadjer, M. J., Imhoff, E. A., Koehler, A. D., Gaskill, D. K., Eddy, C. R., Kub, F. J.
Published in IEEE electron device letters (01.11.2012)
Published in IEEE electron device letters (01.11.2012)
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Plasma-based chemical modification of epitaxial graphene with oxygen functionalities
Hernández, S.C., Wheeler, V.D., Osofsky, M.S., Jernigan, G.G., Nagareddy, V.K., Nath, A., Lock, E.H., Nyakiti, L.O., Myers-Ward, R.L., Sridhara, K., Horsfall, A.B., Eddy, C.R., Gaskill, D.K., Walton, S.G.
Published in Surface & coatings technology (25.02.2014)
Published in Surface & coatings technology (25.02.2014)
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Conference Proceeding
Investigation of three-step epilayer growth approach of GaN films to minimize compensation
EDDY, C. R, HOLM, R. T, HENRY, R. L, CULBERTSON, J. C, TWIGG, M. E
Published in Journal of electronic materials (01.09.2005)
Published in Journal of electronic materials (01.09.2005)
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Insulating gallium oxide layer produced by thermal oxidation of gallium-polar GaN
Hossain, T., Wei, D., Nepal, N., Garces, N. Y., Hite, J. K., Meyer III, H. M., Eddy Jr, C. R., Baker, Troy, Mayo, Ashley, Schmitt, Jason, Edgar, J. H.
Published in Physica status solidi. C (01.02.2014)
Published in Physica status solidi. C (01.02.2014)
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Comparison of the physical, chemical and electrical properties of ALD Al2O3 on c- and m- plane GaN
Wei, D., Hossain, T., Nepal, N., Garces, N. Y., Hite, J. K., Meyer III, H. M., Eddy Jr, C. R., Edgar, J. H.
Published in Physica status solidi. C (01.04.2014)
Published in Physica status solidi. C (01.04.2014)
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Nature of luminescence and strain in gallium nitride nanowires
Mastro, M.A., Maximenko, S., Gowda, M., Simpkins, B.S., Pehrsson, P.E., Long, J.P., Makinen, A.J., Freitas, J.A., Hite, J.K., Eddy, C.R., Kim, J.
Published in Journal of crystal growth (01.05.2009)
Published in Journal of crystal growth (01.05.2009)
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Conference Proceeding
Diffraction Contrast of Threading Dislocations in GaN and 4H-SiC Epitaxial Layers Using Electron Channeling Contrast Imaging
Twigg, M. E., Picard, Y. N., Caldwell, J. D., Eddy, C. R., Mastro, M. A., Holm, R. T., Neudeck, P. G., Trunek, A. J., Powell, J. A.
Published in Journal of electronic materials (01.06.2010)
Published in Journal of electronic materials (01.06.2010)
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Conference Proceeding
Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H2 and C3H8
VANMIL, B. L, LEW, K.-K, MYERS-WARD, R. L, HOLM, R. T, GASKILL, D. K, EDDY, C. R, WANG, L, ZHAO, P
Published in Journal of crystal growth (2009)
Published in Journal of crystal growth (2009)
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