CMOS Compatible Hydrogen Sensor Using Platinum Gate and ALD-Aluminum Oxide
Elshaer, Adham, Ecoffey, Serge, Jaouad, Abdelatif, Monfray, Stephane, Drouin, Dominique
Published in Sensors (Basel, Switzerland) (10.05.2024)
Published in Sensors (Basel, Switzerland) (10.05.2024)
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Journal Article
In‐Memory Vector‐Matrix Multiplication in Monolithic Complementary Metal–Oxide–Semiconductor‐Memristor Integrated Circuits: Design Choices, Challenges, and Perspectives
Amirsoleimani, Amirali, Alibart, Fabien, Yon, Victor, Xu, Jianxiong, Pazhouhandeh, M. Reza, Ecoffey, Serge, Beilliard, Yann, Genov, Roman, Drouin, Dominique
Published in Advanced intelligent systems (01.11.2020)
Published in Advanced intelligent systems (01.11.2020)
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Investigation of resistive switching and transport mechanisms of Al2O3/TiO2−x memristors under cryogenic conditions (1.5 K)
Beilliard, Yann, Paquette, François, Brousseau, Frédéric, Ecoffey, Serge, Alibart, Fabien, Drouin, Dominique
Published in AIP advances (01.02.2020)
Published in AIP advances (01.02.2020)
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Fabrication of top-down gold nanostructures using a damascene process
Merhej, Mouawad, Drouin, Dominique, Salem, Bassem, Baron, Thierry, Ecoffey, Serge
Published in Microelectronic engineering (05.06.2017)
Published in Microelectronic engineering (05.06.2017)
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Damascene versus subtractive line CMP process for resistive memory crossbars BEOL integration
Dawant, Raphaël, Gaudreau, Matthieu, Roy, Marc-Antoine, Mouny, Pierre-Antoine, Valdenaire, Matthieu, Gliech, Pierre, Zapata, Javier Arias, Zegaoui, Malek, Alibart, Fabien, Drouin, Dominique, Ecoffey, Serge
Published in Micro and Nano Engineering (01.06.2024)
Published in Micro and Nano Engineering (01.06.2024)
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Journal Article
Ultrahigh-Sensitive CMOS pH Sensor Developed in the BEOL of Standard 28 nm UTBB FDSOI
Ayele, Getenet Tesega, Monfray, Stephane, Ecoffey, Serge, Boeuf, Frederic, Cloarec, Jean-Pierre, Drouin, Dominique, Souifi, Abdelkader
Published in IEEE journal of the Electron Devices Society (01.01.2018)
Published in IEEE journal of the Electron Devices Society (01.01.2018)
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Journal Article
Analog programming of CMOS-compatible Al2O3/TiO2−x memristor at 4.2 K after metal-insulator transition suppression by cryogenic reforming
Mouny, Pierre-Antoine, Dawant, Raphaël, Galaup, Bastien, Ecoffey, Serge, Pioro-Ladrière, Michel, Beilliard, Yann, Drouin, Dominique
Published in Applied physics letters (16.10.2023)
Published in Applied physics letters (16.10.2023)
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Journal Article
CODEX: Stochastic Encoding Method to Relax Resistive Crossbar Accelerator Design Requirements
Liu, Tony, Amirsoleimani, Amirali, Xu, Jianxiong, Alibart, Fabien, Beilliard, Yann, Ecoffey, Serge, Drouin, Dominique, Genov, Roman
Published in IEEE transactions on circuits and systems. II, Express briefs (01.08.2022)
Published in IEEE transactions on circuits and systems. II, Express briefs (01.08.2022)
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Journal Article
CMOS-compatible Hf 0.5 Zr 0.5 O 2 -based ferroelectric memory crosspoints fabricated with damascene process
Coffineau, Dorian, Gariépy, Nicolas, Manchon, Benoit, Dawant, Raphaël, Jaouad, Abdelatif, Grondin, Etienne, Ecoffey, Serge, Alibart, Fabien, Beilliard, Yann, Ruediger, Andreas, Drouin, Dominique
Published in Nanotechnology (14.10.2024)
Published in Nanotechnology (14.10.2024)
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Journal Article
Hybrid cross correlation and line-scan alignment strategy for CMOS chips electron-beam lithography processing
Dawant, Raphaël, Seils, Robyn, Ecoffey, Serge, Schmid, Rainer, Drouin, Dominique
Published in Journal of vacuum science and technology. B, Nanotechnology & microelectronics (01.01.2022)
Published in Journal of vacuum science and technology. B, Nanotechnology & microelectronics (01.01.2022)
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Journal Article
Erratum: Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al2O3/TiO2 resistive memories (2020 Nanotechnology 31 445205)
Beilliard, Yann, Paquette, François, Brousseau, Frédéric, Ecoffey, Serge, Alibart, Fabien, Drouin, Dominique
Published in Nanotechnology (04.12.2020)
Published in Nanotechnology (04.12.2020)
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Journal Article
Erratum: Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al 2 O 3 /TiO 2 resistive memories (2020 Nanotechnology 31 445205)
Beilliard, Yann, Paquette, François, Brousseau, Frédéric, Ecoffey, Serge, Alibart, Fabien, Drouin, Dominique
Published in Nanotechnology (04.12.2020)
Published in Nanotechnology (04.12.2020)
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Journal Article
Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al 2 O 3 /TiO 2 resistive memories
Beilliard, Yann, Paquette, François, Brousseau, Frédéric, Ecoffey, Serge, Alibart, Fabien, Drouin, Dominique
Published in Nanotechnology (30.10.2020)
Published in Nanotechnology (30.10.2020)
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Journal Article
Conductive filament evolution dynamics revealed by cryogenic (1.5 K) multilevel switching of CMOS-compatible Al2O3/TiO2 resistive memories
Beilliard, Yann, Paquette, François, Brousseau, Frédéric, Ecoffey, Serge, Alibart, Fabien, Drouin, Dominique
Published in Nanotechnology (30.10.2020)
Published in Nanotechnology (30.10.2020)
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Journal Article
Fully CMOS-compatible passive TiO2-based memristor crossbars for in-memory computing
El Mesoudy, Abdelouadoud, Lamri, Gwénaëlle, Dawant, Raphaël, Arias-Zapata, Javier, Gliech, Pierre, Beilliard, Yann, Ecoffey, Serge, Ruediger, Andreas, Alibart, Fabien, Drouin, Dominique
Published in Microelectronic engineering (01.02.2022)
Published in Microelectronic engineering (01.02.2022)
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Journal Article
AIDX: Adaptive Inference Scheme to Mitigate State-Drift in Memristive VMM Accelerators
Liu, Tony, Amirsoleimani, Amirali, Alibart, Fabien, Ecoffey, Serge, Drouin, Dominique, Genov, Roman
Published in IEEE transactions on circuits and systems. II, Express briefs (01.04.2021)
Published in IEEE transactions on circuits and systems. II, Express briefs (01.04.2021)
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Journal Article
Memristor-Based Cryogenic Programmable DC Sources for Scalable In Situ Quantum-Dot Control
Mouny, Pierre-Antoine, Beilliard, Yann, Graveline, Sébastien, Roux, Marc-Antoine, Mesoudy, Abdelouadoud El, Dawant, Raphaël, Gliech, Pierre, Ecoffey, Serge, Alibart, Fabien, Pioro-Ladrière, Michel, Drouin, Dominique
Published in IEEE transactions on electron devices (01.04.2023)
Published in IEEE transactions on electron devices (01.04.2023)
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Journal Article
CMOS-compatible Hf0.5Zr0.5O2-based ferroelectric memory crosspoints fabricated with damascene process
Coffineau, Dorian, Gariépy, Nicolas, Manchon, Benoit, Dawant, Raphaël, Jaouad, Abdelatif, Grondin, Etienne, Ecoffey, Serge, Alibart, Fabien, Beilliard, Yann, Ruediger, Andreas, Drouin, Dominique
Published in Nanotechnology (14.10.2024)
Published in Nanotechnology (14.10.2024)
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Journal Article
Abrasive-free chemical-mechanical planarization (CMP) of gold for thin film nano-patterning
Gherman, Raphael, Beaudin, Guillaume, Stricher, Romain, Bryche, Jean-François, Levesque, Pierre, Fillion-Gourdeau, François, MacLean, Steve G, Drouin, Dominique, Charette, Paul G, Ecoffey, Serge
Published in Nanoscale (19.09.2024)
Published in Nanoscale (19.09.2024)
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