The origin of changes in structural style across the Bandar Abbas syntaxis, SE Zagros (Iran)
Molinaro, M, Guezou, J.C, Leturmy, P, Eshraghi, S.A, de Lamotte, D.Frizon
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Published in Marine and petroleum geology (01.06.2004)
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Journal Article
Effects of oxide interface traps and transient enhanced diffusion on the process modeling of PMOS devices
Vuong, H.-H., Rafferty, C.S., Eshraghi, S.A., Lentz, J.L., Zeitzoff, P.M., Pinto, M.R., Hillenius, S.J.
Published in IEEE transactions on electron devices (01.07.1996)
Published in IEEE transactions on electron devices (01.07.1996)
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Journal Article
Characterization of double-diffused arsenic/phosphorus shallow n+p junctions with TiSi2
ESHRAGHI, S. A, GEORGIOU, G. E, HA, N. T, NAKAHARA, S, LIU, R
Published in Journal of the Electrochemical Society (01.12.1992)
Published in Journal of the Electrochemical Society (01.12.1992)
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Journal Article
Characterization of shallow p+(BF2)/n junctions with TiSi2
GEORGIOU, G. E, ESHRAGHI, S. A, HA, N. T, NAKAHARA, S, LIU, R
Published in Journal of the Electrochemical Society (01.12.1992)
Published in Journal of the Electrochemical Society (01.12.1992)
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Journal Article
An improved generalized guide for MOSFET scaling
Ng, K.K., Eshraghi, S.A., Stanik, T.D.
Published in IEEE transactions on electron devices (01.10.1993)
Published in IEEE transactions on electron devices (01.10.1993)
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Journal Article
Design and benchmarking of BCPMOS versus SCPMOS for an evolutionary 0.25-mum CMOS technology
Vuong, H-H, Eshraghi, S A, Rafferty, C S, Hillenius, S J, Pinto, M R, Diodato, P W, Cong, H-I, Zeitzoff, P M
Published in IEEE transactions on electron devices (01.04.1998)
Published in IEEE transactions on electron devices (01.04.1998)
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Journal Article
Design and benchmarking of BCPMOS versus SCPMOS for an evolutionary 0.25-/spl mu/m CMOS technology
Vuong, H.-H., Eshraghi, S.A., Rafferty, C.S., Hillenius, S.J., Pinto, M.R., Diodato, P.W., Cong, H.-I., Zeitzoff, P.M.
Published in IEEE transactions on electron devices (01.04.1998)
Published in IEEE transactions on electron devices (01.04.1998)
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Journal Article
Characterization of double-diffused arsenic/phosphorus shallow n super(+)p junctions with TiSi sub(2)
Eshraghi, S A, Georgiou, G E, Ha, N T, Nakahara, S, Liu, R
Published in Journal of the Electrochemical Society (01.01.1992)
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Published in Journal of the Electrochemical Society (01.01.1992)
Journal Article
Characterization of shallow p super(+)(BF sub(2))/n junctions with TiSi sub(2)
Georgiou, G E, Eshraghi, S A, Ha, N T, Nakahara, S, Liu, R
Published in Journal of the Electrochemical Society (01.01.1992)
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Published in Journal of the Electrochemical Society (01.01.1992)
Journal Article
Explanation of reverse short channel effect by defect gradients
Rafferty, C.S., Vuong, H.-H., Eshraghi, S.A., Giles, M.D., Pinto, M.R., Hillenius, S.J.
Published in Proceedings of IEEE International Electron Devices Meeting (1993)
Published in Proceedings of IEEE International Electron Devices Meeting (1993)
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Conference Proceeding
Design and benchmarking of BCPMOS versus SCPMOS for an evolutionary 0.25-μm CMOS technology
Vuong, H.-H., Eshraghi, S.A., Rafferty, C.S., Hillenius, S.J., Pinto, M.R., Diodato, P.W., Cong, H.-I., Zeitzoff, P.M.
Published in IEEE transactions on electron devices (01.04.1998)
Published in IEEE transactions on electron devices (01.04.1998)
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Journal Article
SILICON-CARBON COMPOSITE ANODE MATERIAL
MAHMOUD ABDELFATTAH, ESHRAGHI NICOLAS, CLOOTS RUDI, BOSCHINI FREDERIC
Year of Publication 17.08.2021
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Year of Publication 17.08.2021
Patent
규소-탄소 복합 애노드 재료
MAHMOUD ABDELFATTAH, ESHRAGHI NICOLAS, CLOOTS RUDI, BOSCHINI FREDERIC
Year of Publication 26.07.2021
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Year of Publication 26.07.2021
Patent