Development of highly reliable ferroelectric random access memory and its Internet of Things applications
Eshita, Takashi, Wang, Wensheng, Nomura, Kenji, Nakamura, Ko, Saito, Hitoshi, Yamaguchi, Hideshi, Mihara, Satoru, Hikosaka, Yukinobu, Kataoka, Yuji, Kojima, Manabu
Published in Japanese Journal of Applied Physics (01.11.2018)
Published in Japanese Journal of Applied Physics (01.11.2018)
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Journal Article
Investigation of GaAs and AlAs atomic-layer epitaxial growth mechanism based on experimental results and first-principles total energy calculation
Ohtsuka, Nobuyuki, Oda, Masato, Eshita, Takashi, Tanaka, Ichiro, Itoh, Chihiro
Published in Japanese Journal of Applied Physics (01.04.2020)
Published in Japanese Journal of Applied Physics (01.04.2020)
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Journal Article
Development of a Pb(Zr,Ti)O3 capacitor employing an IrO x /Ir bottom electrode for highly reliable ferroelectric random access memories
Sato, Nozomi, Wang, Wensheng, Eshita, Takashi, Oikawa, Mitsuaki, Nakabayashi, Masaaki, Takai, Kazuaki, Nakamura, Ko, Nagai, Kouichi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi
Published in Japanese Journal of Applied Physics (13.08.2024)
Published in Japanese Journal of Applied Physics (13.08.2024)
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Journal Article
Development of a Pb(Zr,Ti)O3 capacitor employing an IrOx/Ir bottom electrode for highly reliable ferroelectric random access memories
Sato, Nozomi, Wang, Wensheng, Eshita, Takashi, Oikawa, Mitsuaki, Nakabayashi, Masaaki, Takai, Kazuaki, Nakamura, Ko, Nagai, Kouichi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi
Published in Japanese Journal of Applied Physics (01.08.2024)
Published in Japanese Journal of Applied Physics (01.08.2024)
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Journal Article
Development of a Pb(Zr,Ti)O 3 capacitor employing an IrO x /Ir bottom electrode for highly reliable ferroelectric random access memories
Sato, Nozomi, Wang, Wensheng, Eshita, Takashi, Oikawa, Mitsuaki, Nakabayashi, Masaaki, Takai, Kazuaki, Nakamura, Ko, Nagai, Kouichi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi
Published in Japanese Journal of Applied Physics (01.08.2024)
Published in Japanese Journal of Applied Physics (01.08.2024)
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Journal Article
An improvement of low temperature characteristics of an La-doped Pb(Zr,Ti)O3 capacitor
Wang, Wensheng, Eshita, Takashi, Takai, Kazuaki, Nomura, Kenji, Yamaguchi, Hideshi, Nakamura, Ko, Ozawa, Soichiro, Nagai, Kouichi, Watanabe, Junichi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi, Kojima, Manabu
Published in Japanese Journal of Applied Physics (01.11.2022)
Published in Japanese Journal of Applied Physics (01.11.2022)
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Journal Article
An improvement of low temperature characteristics of an La-doped Pb(Zr,Ti)O 3 capacitor
Wang, Wensheng, Eshita, Takashi, Takai, Kazuaki, Nomura, Kenji, Yamaguchi, Hideshi, Nakamura, Ko, Ozawa, Soichiro, Nagai, Kouichi, Watanabe, Junichi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi, Kojima, Manabu
Published in Japanese Journal of Applied Physics (01.11.2022)
Published in Japanese Journal of Applied Physics (01.11.2022)
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Journal Article
Ferroelectric random access memory with high electric properties and high production yield realized by employing an AlO x underlying layer of Pt bottom electrode for a La-doped lead zirconate titanate capacitor
Wang, Wensheng, Nomura, Kenji, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Yamaguchi, Hideshi, Takai, Kazuaki, Watanabe, Junichi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi, Kataoka, Yuji, Kojima, Manabu
Published in Japanese Journal of Applied Physics (01.01.2019)
Published in Japanese Journal of Applied Physics (01.01.2019)
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Journal Article
Ferroelectric random access memory with high electric properties and high production yield realized by employing an AlOx underlying layer of Pt bottom electrode for a La-doped lead zirconate titanate capacitor
Wang, Wensheng, Nomura, Kenji, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Yamaguchi, Hideshi, Takai, Kazuaki, Watanabe, Junichi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi, Kataoka, Yuji, Kojima, Manabu
Published in Japanese Journal of Applied Physics (01.01.2019)
Published in Japanese Journal of Applied Physics (01.01.2019)
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Journal Article
Direct deposition of SrBi2Ta2O9 Film on IrO2 electrode using liquid source CVD method
Eshita, Takashi, Yamawaki, Hideki, Miyagaki, Shinji, Arimoto, Yoshihiro
Published in Integrated ferroelectrics (01.10.1999)
Published in Integrated ferroelectrics (01.10.1999)
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Journal Article
Control of La-doped Pb(Zr,Ti)O3 crystalline orientation and its influence on the properties of ferroelectric random access memory
Wang, Wensheng, Nomura, Kenji, Yamaguchi, Hideshi, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Takai, Kazuaki, Mihara, Satoru, Hikosaka, Yukinobu, Hamada, Makoto, Kataoka, Yuji
Published in Japanese Journal of Applied Physics (01.10.2017)
Published in Japanese Journal of Applied Physics (01.10.2017)
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Journal Article
Control of La-doped Pb(Zr,Ti)O 3 crystalline orientation and its influence on the properties of ferroelectric random access memory
Wang, Wensheng, Nomura, Kenji, Yamaguchi, Hideshi, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Takai, Kazuaki, Mihara, Satoru, Hikosaka, Yukinobu, Hamada, Makoto, Kataoka, Yuji
Published in Japanese Journal of Applied Physics (01.10.2017)
Published in Japanese Journal of Applied Physics (01.10.2017)
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Journal Article
Ferroelectric random access memory with high electric properties and high production yield realized by employing an AlO^sub x^ underlying layer of Pt bottom electrode for a La-doped lead zirconate titanate capacitor
Wang, Wensheng, Nomura, Kenji, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Yamaguchi, Hideshi, Takai, Kazuaki, Watanabe, Junichi, Mihara, Satoru, Hikosaka, Yukinobu, Saito, Hitoshi, Kataoka, Yuji, Kojima, Manabu
Published in Japanese Journal of Applied Physics (01.01.2019)
Published in Japanese Journal of Applied Physics (01.01.2019)
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Journal Article
Improvement of ferroelectric random access memory manufacturing margin by employing Pt/AlO ^sub x^ bottom electrode for the La-doped Pb(Zr,Ti)O^sub 3^ ferroelectric capacitor
Nomura, Kenji, Wang, Wensheng, Yamaguchi, Hideshi, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Takai, Kazuaki, Mihara, Satoru, Hikosaka, Yukinobu, Hamada, Makoto, Kojima, Manabu, Kataoka, Yuji
Published in Japanese Journal of Applied Physics (01.11.2018)
Published in Japanese Journal of Applied Physics (01.11.2018)
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Journal Article
Improvement of ferroelectric random access memory manufacturing margin by employing Pt/AlOx bottom electrode for the La-doped Pb(Zr,Ti)O3 ferroelectric capacitor
Nomura, Kenji, Wang, Wensheng, Yamaguchi, Hideshi, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Takai, Kazuaki, Mihara, Satoru, Hikosaka, Yukinobu, Hamada, Makoto, Kojima, Manabu, Kataoka, Yuji
Published in Japanese Journal of Applied Physics (01.11.2018)
Published in Japanese Journal of Applied Physics (01.11.2018)
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Journal Article
Improvement of ferroelectric random access memory manufacturing margin by employing Pt/AlO x bottom electrode for the La-doped Pb(Zr,Ti)O 3 ferroelectric capacitor
Nomura, Kenji, Wang, Wensheng, Yamaguchi, Hideshi, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Takai, Kazuaki, Mihara, Satoru, Hikosaka, Yukinobu, Hamada, Makoto, Kojima, Manabu, Kataoka, Yuji
Published in Japanese Journal of Applied Physics (01.11.2018)
Published in Japanese Journal of Applied Physics (01.11.2018)
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Journal Article
Control of La-doped Pb(Zr,Ti)O^sub 3^ crystalline orientation and its influence on the properties of ferroelectric random access memory
Wang, Wensheng, Nomura, Kenji, Yamaguchi, Hideshi, Nakamura, Ko, Eshita, Takashi, Ozawa, Soichiro, Takai, Kazuaki, Mihara, Satoru, Hikosaka, Yukinobu, Hamada, Makoto
Published in Japanese Journal of Applied Physics (01.10.2017)
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Published in Japanese Journal of Applied Physics (01.10.2017)
Journal Article
Novel pseudomorphic structure on Si substrate grown by metalorganic vapor phase epitaxy
Ohori, Tatsuya, Eshita, Takashi, Miyagaki, Shinji, Kasai, Kazumi, Komeno, Junji
Published in Journal of crystal growth (01.12.1994)
Published in Journal of crystal growth (01.12.1994)
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Journal Article
Conference Proceeding