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Precision Implant Requirements for SDE Junction Formation in sub-65 nm CMOS Devices

Precision Implant Requirements for SDE Junction Formation in sub-65 nm CMOS Devices

by Erokhin, Y., Jinning Liu
Published in 2006 International Workshop on Junction Technology (2006)

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Conference Proceeding

INTERNAL GETTERING IN SIMOX SOI SILICON SUBSTRATES

INTERNAL GETTERING IN SIMOX SOI SILICON SUBSTRATES

by EROKHIN, YURI, DEMPSEY, KEVIN, J
Year of Publication 03.03.2005

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Patent

Internal gettering in SIMOX SOI silicon substrates

Internal gettering in SIMOX SOI silicon substrates

by EROKHIN YURI, DEMPSEY KEVIN J
Year of Publication 17.02.2005

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Patent

Cleave initiation using varying ion implant dose

Cleave initiation using varying ion implant dose

by SULLIVAN PAUL J, EROKHIN YURI, NUNAN PETER, WALTHER STEVEN R
Year of Publication 26.10.2010

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Patent

Cleave initiation using varying ion implant dose

Cleave initiation using varying ion implant dose

by Nunan, Peter, Walther, Steven R, Erokhin, Yuri, Sullivan, Paul J
Year of Publication 26.10.2010

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Patent

METHOD OF PRODUCING A HIGH RESISTIVITY SIMOX SILICON SUBSTRATE

METHOD OF PRODUCING A HIGH RESISTIVITY SIMOX SILICON SUBSTRATE

by EROKHIN YURI, KONONCHUK OLEG V
Year of Publication 11.11.2004

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Patent

ACTIVE WAFER COOLING DURING DAMAGE ENGINEERING IMPLANT TO ENHANCE BURIED OXIDE FORMATION IN SIMOX WAFERS

ACTIVE WAFER COOLING DURING DAMAGE ENGINEERING IMPLANT TO ENHANCE BURIED OXIDE FORMATION IN SIMOX WAFERS

by EROKHIN, YURI, BLAKE, JULIAN, G
Year of Publication 04.08.2004

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Patent

TWO-STEP ION IMPLANTATION METHOD WITH ACTIVE WAFER COOLING FOR BURIED OXIDE FORMATION

TWO-STEP ION IMPLANTATION METHOD WITH ACTIVE WAFER COOLING FOR BURIED OXIDE FORMATION

by EROKHIN, YURI, BLAKE, JULIAN, G
Year of Publication 11.03.2004

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Patent

Two-step ion implantation method with active wafer cooling for buried oxide formation

Two-step ion implantation method with active wafer cooling for buried oxide formation

by YURI EROKHIN, JULIAN G. BLAKE
Year of Publication 19.05.2003

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Patent

ACTIVE WAFER COOLING DURING DAMAGE ENGINEERING IMPLANT TO ENHANCE BURIED OXIDE FORMATION IN SIMOX WAFERS

ACTIVE WAFER COOLING DURING DAMAGE ENGINEERING IMPLANT TO ENHANCE BURIED OXIDE FORMATION IN SIMOX WAFERS

by EROKHIN, YURI, BLAKE, JULIAN, G
Year of Publication 15.05.2003

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Patent

Active wafer cooling during damage engineering implant to enchance buried oxide formation in simox wafers

Active wafer cooling during damage engineering implant to enchance buried oxide formation in simox wafers

by EROKHIN YURI, BLAKE JULIAN G
Year of Publication 08.05.2003

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Patent

CLEAVE INITIATION USING VARYING ION IMPLANT DOSE

CLEAVE INITIATION USING VARYING ION IMPLANT DOSE

by SULLIVAN PAUL J, EROKHIN YURI, NUNAN PETER, WALTHER STEVEN R
Year of Publication 20.08.2009

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Patent

WAFER BONDING ACTIVATED BY ION IMPLANTATION

WAFER BONDING ACTIVATED BY ION IMPLANTATION

by EROKHIN, YURI, SULLIVAN, PAUL, WALTHER, STEVEN, R, NUNAN, PETER
Year of Publication 28.05.2009

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Patent

TWO-DIEMENSIONAL UNIFORMITY CORRECTION FOR ION BEAM ASSISTED ETCHING

TWO-DIEMENSIONAL UNIFORMITY CORRECTION FOR ION BEAM ASSISTED ETCHING

by NUNAN, PETER, D, EROKHIN, YURI, WALTHER, STEVEN, R
Year of Publication 09.04.2009

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Patent

UNIFORMITY CONTROL FOR ION BEAM ASSISTED ETCHING

UNIFORMITY CONTROL FOR ION BEAM ASSISTED ETCHING

by EROKHIN YURI, NUNAN PETER D, WALTHER STEVEN R
Year of Publication 02.04.2009

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Patent

SINGLE WAFER IMPLANTER FOR SILICON-ON-INSULATOR WAFER FABRICATION

SINGLE WAFER IMPLANTER FOR SILICON-ON-INSULATOR WAFER FABRICATION

by EROKHIN, YURI, BLAKE, JULIAN, G, ENGLAND, JONATHAN, GERALD
Year of Publication 02.04.2009

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Patent

WAFER BONDING ACTIVATED BY ION IMPLANTATION

WAFER BONDING ACTIVATED BY ION IMPLANTATION

by EROKHIN, YURI, SULLIVAN, PAUL, WALTHER, STEVEN, R, NUNAN, PETER
Year of Publication 26.03.2009

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Patent

WAFER BONDING ACTIVATED BY ION IMPLANTATION

WAFER BONDING ACTIVATED BY ION IMPLANTATION

by EROKHIN YURI, NUNAN PETER, SULLIVAN PAUL, WALTHER STEVEN R
Year of Publication 26.03.2009

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Patent

Silicon:Carbon Source/Drain Stressors: Integration of a Novel Nickel Aluminide-Silicide and Post-Solid-Phase-Epitaxy Anneal for Reduced Schottky-Barrier and Leakage

Silicon:Carbon Source/Drain Stressors: Integration of a Novel Nickel Aluminide-Silicide and Post-Solid-Phase-Epitaxy Anneal for Reduced Schottky-Barrier and Leakage

by Koh, Shao Ming, Zhou, Wei-Jing, Lee, Rinus T. P., Sinha, Mantavya, Ng, Chee-Mang, Zhao, Zhiyong, Maynard, Helen, Variam, Naushad, Erokhin, Yuri, Samudra, Ganesh, Yeo, Yee-Chia
Published in Meeting abstracts (Electrochemical Society) (10.07.2009)

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Journal Article

Enhancing tensile stress and source/drain activation with Si:C with innovations in ion implant and millisecond laser spike annealing

Enhancing tensile stress and source/drain activation with Si:C with innovations in ion implant and millisecond laser spike annealing

by Maynard, Helen, Hatem, Christopher, Gossmann, Hans-Joachim, Erokhin, Yuri, Variam, Naushad, Shaoyin Chen, Yun Wang
Published in 2008 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors (01.09.2008)

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Conference Proceeding

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