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SILICON CARBIDE EPITAXIAL SUBSTRATE, METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE EPITAXIAL SUBSTRATE, METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

by ENOKIZONO, Taro
Year of Publication 21.03.2024

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Patent

MEASUREMENT METHOD FOR CARRIER CONCENTRATION, MANUFACTURING METHOD OF SILICON CARBIDE EPITAXIAL SUBSTRATE, AND MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE

MEASUREMENT METHOD FOR CARRIER CONCENTRATION, MANUFACTURING METHOD OF SILICON CARBIDE EPITAXIAL SUBSTRATE, AND MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE

by ENOKIZONO TARO
Year of Publication 07.07.2023

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Patent

SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE EPITAXIAL SUBSTRATE AND SILICON CARBIDE SEMICONDUCTOR DEVICE

by ENOKIZONO TARO
Year of Publication 22.09.2022

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Patent

SUSCEPTOR, METHOD FOR GROWING SILICON CARBIDE EPITAXIAL LAYER, AND METHOD FOR MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE

SUSCEPTOR, METHOD FOR GROWING SILICON CARBIDE EPITAXIAL LAYER, AND METHOD FOR MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE

by ENOKIZONO TARO
Year of Publication 07.07.2022

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Patent

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

by HISANABE, Hideyuki, ENOKIZONO, Taro, KONDO, Tetsuro
Year of Publication 25.01.2024

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Patent

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

by OKAYAMA, Naoki, HISANABE, Hideyuki, ENOKIZONO, Taro
Year of Publication 21.09.2023

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Patent

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE

by NISHIHARA, Hiroki, MIYASE, Takaya, HONKE, Tsubasa, ENOKIZONO, Taro
Year of Publication 01.12.2022

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Patent

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD FOR PRODUCING SILICON CARBIDE SEMICONDUCTOR DEVICE

by NISHIHARA, Hiroki, MIYASE, Takaya, HONKE, Tsubasa, ENOKIZONO, Taro
Year of Publication 01.12.2022

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Patent

SILICON CARBIDE EPITAXIAL SUBSTRATE

SILICON CARBIDE EPITAXIAL SUBSTRATE

by NISHIGUCHI, Taro, HORI, Tsutomu, ENOKIZONO, Taro
Year of Publication 24.12.2020

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Patent

Highly Reliable 4H-SiC Epitaxial Wafer with BPD Free Recombination-Enhancing Buffer Layer for High Current Applications

Highly Reliable 4H-SiC Epitaxial Wafer with BPD Free Recombination-Enhancing Buffer Layer for High Current Applications

by Enokizono, Taro, Furumai, Masaki, Itoh, Hironori, Miyase, Takaya, Hori, Tsutomu, Wada, Keiji, Doi, Hideyuki
Published in Materials science forum (28.07.2020)

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Journal Article

Silicon carbide epitaxial substrate

Silicon carbide epitaxial substrate

by Nishiguchi, Taro, Enokizono, Taro, Hori, Tsutomu
Year of Publication 14.05.2024

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Patent

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

by NISHIHARA, Hiroki, MIYASE, Takaya, HONKE, Tsubasa, ENOKIZONO, Taro
Year of Publication 15.08.2024

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Patent

SILICON CARBIDE EPITAXIAL SUBSTRATE

SILICON CARBIDE EPITAXIAL SUBSTRATE

by NISHIGUCHI, Taro, HORI, Tsutomu, ENOKIZONO, Taro
Year of Publication 21.10.2021

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Patent

SILICON CARBIDE EPITAXIAL SUBSTRATE

SILICON CARBIDE EPITAXIAL SUBSTRATE

by NISHIGUCHI TARO, ENOKIZONO TARO, HORI TSUTOMU
Year of Publication 16.03.2021

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Patent