Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation
Sharma, Prateek, Tyaginov, Stanislav, Wimmer, Yannick, Rudolf, Florian, Rupp, Karl, Bina, Markus, Enichlmair, Hubert, Jong-Mun Park, Minixhofer, Rainer, Ceric, Hajdin, Grasser, Tibor
Published in IEEE transactions on electron devices (01.06.2015)
Published in IEEE transactions on electron devices (01.06.2015)
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Journal Article
The role of cold carriers and the multiple-carrier process of Si–H bond dissociation for hot-carrier degradation in n- and p-channel LDMOS devices
Sharma, Prateek, Tyaginov, Stanislav, Jech, Markus, Wimmer, Yannick, Rudolf, Florian, Enichlmair, Hubert, Park, Jong-Mun, Ceric, Hajdin, Grasser, Tibor
Published in Solid-state electronics (01.01.2016)
Published in Solid-state electronics (01.01.2016)
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Journal Article
Secondary generated holes as a crucial component for modeling of HC degradation in high-voltage n-MOSFET
Tyaginov, S., Starkov, I., Triebl, O., Ceric, H., Grasser, T., Enichlmair, H., Jong-Mun Park, Jungemann, C.
Published in 2011 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2011)
Published in 2011 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2011)
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Conference Proceeding
Physics-Based Hot-Carrier Degradation Modeling
Tyaginov, Stanislav E., Starkov, Ivan, Enichlmair, Hubert, Park, Jong Mun, Jungemann, Christoph, Grasser, Tibor
Published in ECS transactions (25.04.2011)
Published in ECS transactions (25.04.2011)
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Journal Article
Impact of the carrier distribution function on hot-carrier degradation modeling
Tyaginov, S., Starkov, I., Jungemann, C., Enichlmair, H., Jong-Mun Park, Grasser, T.
Published in 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) (01.09.2011)
Published in 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC) (01.09.2011)
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Conference Proceeding
Analysis of worst-case hot-carrier degradation conditions in the case of n- and p-channel high-voltage MOSFETs
Starkov, I., Ceric, H., Enichlmair, H., Jong-Mun Park, Tyaginov, Stanislav, Grasser, Tibor, Jungemann, Christoph
Published in 2011 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2011)
Published in 2011 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2011)
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Conference Proceeding
Toward Automated Defect Extraction From Bias Temperature Instability Measurements
Waldhoer, Dominic, Schleich, Christian, Michl, Jakob, Stampfer, Bernhard, Tselios, Konstantinos, Ioannidis, Eleftherios G., Enichlmair, Hubert, Waltl, Michael, Grasser, Tibor
Published in IEEE transactions on electron devices (01.08.2021)
Published in IEEE transactions on electron devices (01.08.2021)
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Journal Article
Evaluation of the impact of defects on threshold voltage drift employing SiO2 pMOS transistors
Tselios, Konstantinos, Michl, Jakob, Knobloch, Theresia, Enichlmair, Hubert, Ioannidis, Eleftherios G., Minixhofer, Rainer, Grasser, Tibor, Waltl, Michael
Published in Microelectronics and reliability (01.11.2022)
Published in Microelectronics and reliability (01.11.2022)
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Journal Article
Impact of single-defects on the variability of CMOS inverter circuits
Waltl, Michael, Waldhoer, Dominic, Tselios, Konstantinos, Stampfer, Bernhard, Schleich, Christian, Rzepa, Gerhard, Enichlmair, Hubert, Ioannidis, Eleftherios G., Minixhofer, Rainer, Grasser, Tibor
Published in Microelectronics and reliability (01.11.2021)
Published in Microelectronics and reliability (01.11.2021)
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Journal Article
A model for hot-carrier degradation in nLDMOS transistors based on the exact solution of the Boltzmann transport equation versus the drift-diffusion scheme
Sharma, Prateek, Tyaginov, Stanislav, Wimmer, Yannick, Rudolf, Florian, Enichlmair, Hubert, Jong-Mun Park, Ceric, Hajdin, Grasser, Tibor
Published in EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (01.01.2015)
Published in EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (01.01.2015)
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Conference Proceeding
Modeling of hot-carrier degradation in LDMOS devices using a drift-diffusion based approach
Sharma, Prateek, Jech, Markus, Tyaginov, Stanislav, Rudolf, Florian, Rupp, Karl, Enichlmair, Hubert, Jong-Mun Park, Grasser, Tibor
Published in 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2015)
Published in 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2015)
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Conference Proceeding
Journal Article
Negative bias temperature instability modeling for high-voltage oxides at different stress temperatures
Entner, Robert, Grasser, Tibor, Triebl, Oliver, Enichlmair, Hubert, Minixhofer, Rainer
Published in Microelectronics and reliability (01.04.2007)
Published in Microelectronics and reliability (01.04.2007)
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Journal Article
Conference Proceeding