Search Results - "ENDOH TETSUO" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

A Nonvolatile Associative Memory-Based Context-Driven Search Engine Using 90 nm CMOS/MTJ-Hybrid Logic-in-Memory Architecture

A Nonvolatile Associative Memory-Based Context-Driven Search Engine Using 90 nm CMOS/MTJ-Hybrid Logic-in-Memory Architecture

by Jarollahi, Hooman, Onizawa, Naoya, Gripon, Vincent, Sakimura, Noboru, Sugibayashi, Tadahiko, Endoh, Tetsuo, Ohno, Hideo, Hanyu, Takahiro, Gross, Warren J.
Published in IEEE journal on emerging and selected topics in circuits and systems (01.12.2014)

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Journal Article

Novel Concept of the Three-Dimensional Vertical FG nand Flash Memory Using the Separated-Sidewall Control Gate

Novel Concept of the Three-Dimensional Vertical FG nand Flash Memory Using the Separated-Sidewall Control Gate

by Moon-Sik Seo, Bong-Hoon Lee, Sung-Kye Park, Endoh, Tetsuo
Published in IEEE transactions on electron devices (01.08.2012)

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Journal Article

A high efficient, low power, and compact charge pump by vertical MOSFETs

A high efficient, low power, and compact charge pump by vertical MOSFETs

by Sakui, Koji, Endoh, Tetsuo
Published in Solid-state electronics (01.10.2010)

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Journal Article

Power reduction by power gating in differential pair type spin-transfer-torque magnetic random access memories for low-power nonvolatile cache memories

Power reduction by power gating in differential pair type spin-transfer-torque magnetic random access memories for low-power nonvolatile cache memories

by Ohsawa, Takashi, Ikeda, Shoji, Hanyu, Takahiro, Ohno, Hideo, Endoh, Tetsuo
Published in Japanese Journal of Applied Physics (01.04.2014)

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Journal Article

High-Density and Low-Power Nonvolatile Static Random Access Memory Using Spin-Transfer-Torque Magnetic Tunnel Junction

High-Density and Low-Power Nonvolatile Static Random Access Memory Using Spin-Transfer-Torque Magnetic Tunnel Junction

by Ohsawa, Takashi, Iga, Fumitaka, Ikeda, Shoji, Hanyu, Takahiro, Ohno, Hideo, Endoh, Tetsuo
Published in Japanese Journal of Applied Physics (01.02.2012)

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Journal Article

Standby-Power-Free Compact Ternary Content-Addressable Memory Cell Chip Using Magnetic Tunnel Junction Devices

Standby-Power-Free Compact Ternary Content-Addressable Memory Cell Chip Using Magnetic Tunnel Junction Devices

by Matsunaga, Shoun, Hiyama, Kimiyuki, Matsumoto, Atsushi, Ikeda, Shoji, Hasegawa, Haruhiro, Miura, Katsuya, Hayakawa, Jun, Endoh, Tetsuo, Ohno, Hideo, Hanyu, Takahiro
Published in Applied physics express (01.02.2009)

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Journal Article

Design of a Compact Nonvolatile Four-Input Logic Element Using a Magnetic Tunnel Junction and Metal--Oxide--Semiconductor Hybrid Structure

Design of a Compact Nonvolatile Four-Input Logic Element Using a Magnetic Tunnel Junction and Metal--Oxide--Semiconductor Hybrid Structure

by Suzuki, Daisuke, Natsui, Masanori, Endoh, Tetsuo, Ohno, Hideo, Hanyu, Takahiro
Published in Japanese Journal of Applied Physics (01.04.2012)

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Journal Article

A two-transistor bootstrap type selective device for spin-transfer-torque magnetic tunnel junctions

A two-transistor bootstrap type selective device for spin-transfer-torque magnetic tunnel junctions

by Ohsawa, Takashi, Ikeda, Shoji, Hanyu, Takahiro, Ohno, Hideo, Endoh, Tetsuo
Published in Japanese Journal of Applied Physics (01.04.2014)

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Journal Article

Erratum: Influence of Oxygen Concentration of Si Wafer Surface in Si Emission on Nano Ordered Three-Dimensional Structure Devices [e-J. Surf. Sci. Nanotech. Vol. 15, pp. 127-134 (2017)]

Erratum: Influence of Oxygen Concentration of Si Wafer Surface in Si Emission on Nano Ordered Three-Dimensional Structure Devices [e-J. Surf. Sci. Nanotech. Vol. 15, pp. 127-134 (2017)]

by Fukuda, Etsuo, Endoh, Tetsuo, Ishikawa, Takashi, Izunome, Koji, Kamijo, Kazutaka, Miyashita, Moriya, Sakamoto, Takao, Kageshima, Hiroyuki
Published in E-journal of surface science and nanotechnology (25.08.2018)

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Journal Article

Multiple breakdown model of carpet-bombing-like concaves formed during dielectric breakdown of silicon carbide metal-oxide-semiconductor capacitors

Multiple breakdown model of carpet-bombing-like concaves formed during dielectric breakdown of silicon carbide metal-oxide-semiconductor capacitors

by Sato, Soshi, Hiroi, Yuki, Yamabe, Kikuo, Kitabatake, Makoto, Endoh, Tetsuo, Niwa, Masaaki
Published in Japanese Journal of Applied Physics (01.08.2014)

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Journal Article

Properties of perpendicular-anisotropy magnetic tunnel junctions fabricated over the bottom electrode contact

Properties of perpendicular-anisotropy magnetic tunnel junctions fabricated over the bottom electrode contact

by Miura, Sadahiko, Honjo, Hiroaki, Kinoshita, Keizo, Tokutome, Keiichi, Koike, Hiroaki, Ikeda, Shoji, Endoh, Tetsuo, Ohno, Hideo
Published in Japanese Journal of Applied Physics (01.04.2015)

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Journal Article

Nonvolatile Low Power 16-bit/32-bit Magnetic Tunnel Junction Based Binary Counter and Its Scaling

Nonvolatile Low Power 16-bit/32-bit Magnetic Tunnel Junction Based Binary Counter and Its Scaling

by Togashi, Shuta, Ohsawa, Takashi, Endoh, Tetsuo
Published in Japanese Journal of Applied Physics (01.02.2012)

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Journal Article

Influence of Oxygen Concentration of Si Wafer Surface in Si Emission on Nano Ordered Three-Dimensional Structure Devices

Influence of Oxygen Concentration of Si Wafer Surface in Si Emission on Nano Ordered Three-Dimensional Structure Devices

by Fukuda, Etsuo, Endoh, Tetsuo, Ishikawa, Takashi, Izunome, Koji, Kamijo, Kazutaka, Miyashita, Moriya, Sakamoto, Takao, Kageshima, Hiroyuki
Published in E-journal of surface science and nanotechnology (01.01.2017)

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Journal Article

High-speed simulator including accurate MTJ models for spintronics integrated circuit design

High-speed simulator including accurate MTJ models for spintronics integrated circuit design

by Sakimura, N., Nebashi, R., Tsuji, Y., Honjo, H., Sugibayashi, T., Koike, H., Ohsawa, T., Fukami, S., Hanyu, T., Ohno, H., Endoh, T.
Published in 2012 IEEE International Symposium on Circuits and Systems (ISCAS) (01.05.2012)

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Conference Proceeding

Suppression of self-heating effect employing bulk vertical-channel bipolar junction transistor (BJT) type capacitorless 1T-DRAM cell

Suppression of self-heating effect employing bulk vertical-channel bipolar junction transistor (BJT) type capacitorless 1T-DRAM cell

by Imamoto, Takuya, Endoh, Tetsuo
Published in 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) (01.10.2013)

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Conference Proceeding

Gate length scaling of high-k vertical MOSFET toward 20nm CMOS technology and beyond

Gate length scaling of high-k vertical MOSFET toward 20nm CMOS technology and beyond

by Sasaki, Takeshi, Endoh, Tetsuo
Published in 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) (01.10.2013)

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Conference Proceeding

Nonvolatile Low Power 16-bit/32-bit Magnetic Tunnel Junction Based Binary Counter and Its Scaling

Nonvolatile Low Power 16-bit/32-bit Magnetic Tunnel Junction Based Binary Counter and Its Scaling

by Togashi, Shuta, Ohsawa, Takashi, Endoh, Tetsuo
Published in Japanese Journal of Applied Physics (01.02.2012)

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Journal Article

Design of a Compact Nonvolatile Four-Input Logic Element Using a Magnetic Tunnel Junction and Metal–Oxide–Semiconductor Hybrid Structure

Design of a Compact Nonvolatile Four-Input Logic Element Using a Magnetic Tunnel Junction and Metal–Oxide–Semiconductor Hybrid Structure

by Suzuki, Daisuke, Natsui, Masanori, Endoh, Tetsuo, Ohno, Hideo, Hanyu, Takahiro
Published in Japanese Journal of Applied Physics (01.04.2012)

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Journal Article

Study of Self-Heating in Si Nano Structure for Floating Body-Surround Gate Transistor with High-k Dielectric Films

Study of Self-Heating in Si Nano Structure for Floating Body-Surround Gate Transistor with High-k Dielectric Films

by Endoh, Tetsuo, Tanaka, Kousuke
Published in Japanese Journal of Applied Physics (01.05.2007)

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Journal Article

Fine-Grained Power-Gating Scheme of a Metal--Oxide--Semiconductor and Magnetic-Tunnel-Junction-Hybrid Bit-Serial Ternary Content-Addressable Memory

Fine-Grained Power-Gating Scheme of a Metal--Oxide--Semiconductor and Magnetic-Tunnel-Junction-Hybrid Bit-Serial Ternary Content-Addressable Memory

by Matsunaga, Shoun, Natsui, Masanori, Hiyama, Kimiyuki, Endoh, Tetsuo, Ohno, Hideo, Hanyu, Takahiro
Published in Japanese Journal of Applied Physics (01.04.2010)

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Journal Article

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