A boron source for silicon molecular beam epitaxy
EK, BRUCE ALLEN, DELAGE, SYLVAIN LAURENT, IYER, SUBRAMANIAN SIRKANTESWARA
Year of Publication 23.02.1994
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Year of Publication 23.02.1994
Patent
Method for forming a single crystal semiconductor on a substrate
GATES; STEPHEN MCCONNELL, IYER; SUBRAMANIAN SRIKANTESWARA, POWELL; ADRIAN ROGER, GUARIN; FERNANDO JOSE, EK; BRUCE ALLEN
Year of Publication 16.09.1997
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Year of Publication 16.09.1997
Patent
A boron source for silicon molecular beam epitaxy
EK, BRUCE ALLEN, DELAGE, SYLVAIN LAURENT, IYER, SUBRAMANIAN SIRKANTESWARA
Year of Publication 22.05.1991
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Year of Publication 22.05.1991
Patent