GaAs MESFETs fabricated on Si substrates using a SrTiO3 buffer layer
Eisenbeiser, K., Emrick, R., Droopad, R., Yu, Z., Finder, J., Rockwell, S., Holmes, J., Overgaard, C., Ooms, W.
Published in IEEE electron device letters (01.06.2002)
Published in IEEE electron device letters (01.06.2002)
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Journal Article
Advances in heteroepitaxy of oxides on silicon
Yu, Z., Liang, Y., Overgaard, C., Hu, X., Curless, J., Li, H., Wei, Y., Craigo, B., Jordan, D., Droopad, R., Finder, J., Eisenbeiser, K., Marshall, D., Moore, K., Kulik, J., Fejes, P.
Published in Thin solid films (01.09.2004)
Published in Thin solid films (01.09.2004)
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Journal Article
Comparative study of Sr and Ba adsorption on Si(1 0 0)
Hu, Xiaoming, Yu, Z., Curless, J.A., Droopad, R., Eisenbeiser, K., Edwards, J.L., Ooms, W.J., Sarid, D.
Published in Applied surface science (03.09.2001)
Published in Applied surface science (03.09.2001)
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Journal Article
Study of Microstructure in SrTiO3/Si by High-resolution Transmission Electron Microscopy
Yang, G. Y., Finder, J. M., Wang, J., Wang, Z. L., Yu, Z., Ramdani, J., Droopad, R., Eisenbeiser, K. W., Ramesh, R.
Published in Journal of materials research (01.01.2002)
Published in Journal of materials research (01.01.2002)
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Journal Article
Development of high dielectric constant epitaxial oxides on silicon by molecular beam epitaxy
Droopad, R, Yu, Z, Ramdani, J, Hilt, L, Curless, J, Overgaard, C, Edwards, J.L, Finder, J, Eisenbeiser, K, Ooms, W
Published in Materials science & engineering. B, Solid-state materials for advanced technology (19.12.2001)
Published in Materials science & engineering. B, Solid-state materials for advanced technology (19.12.2001)
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Journal Article
Conference Proceeding
Interface characterization of high-quality SrTiO3 thin films on Si(100) substrates grown by molecular beam epitaxy
Ramdani, J, Droopad, R, Yu, Z, Curless, J.A, Overgaard, C.D, Finder, J, Eisenbeiser, K, Hallmark, J.A, Ooms, W.J, Kaushik, V, Alluri, P, Pietambaram, S
Published in Applied surface science (01.06.2000)
Published in Applied surface science (01.06.2000)
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Journal Article
Epitaxial Pb(Zr,Ti)O3 Capacitors on Si by Liquid Delivery Metalorganic Chemical Vapor Deposition
Yang, S Y, Liu, B T, Ouyang, J, Nagarajan, V, Kulkarni, V N, Ramesh, R, Kidder, J, Droopad, R, Eisenbeiser, K
Published in Journal of electroceramics (01.01.2005)
Published in Journal of electroceramics (01.01.2005)
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Journal Article
Crystalline oxide-based devices on silicon substrates
EISENBEISER, K, DROOPAD, R, YU, Z, OVERGAARD, C, KULIK, J, FINDER, J, SMITH, S. M, VOIGHT, S, PENUNURI, D
Published in Journal of electronic materials (01.08.2003)
Published in Journal of electronic materials (01.08.2003)
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Conference Proceeding
Journal Article
Manufacturable GaAs VFET for power switching applications
Eisenbeiser, K., Jenn-Hwa Huang, Salih, A., Hadizad, P., Pitts, B.
Published in IEEE electron device letters (01.04.2000)
Published in IEEE electron device letters (01.04.2000)
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Journal Article
Breakdown voltage improvement in strained InGaAlAs/GaAs FETs
Eisenbeiser, K.W., East, J.R., Singh, J., Li, W., Haddad, G.I.
Published in IEEE electron device letters (01.08.1992)
Published in IEEE electron device letters (01.08.1992)
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Journal Article
GaAs MESFETs fabricated on Si substrates using a SrTiO 3 buffer layer
Eisenbeiser, K., Emrick, R., Droopad, R., Yu, Z., Finder, J., Rockwell, S., Holmes, J., Overgaard, C., Ooms, W.
Published in IEEE electron device letters (01.06.2002)
Published in IEEE electron device letters (01.06.2002)
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Journal Article
Theoretical analysis of the breakdown voltage in pseudomorphic HFETs
Eisenbeiser, K.W., East, J.R., Haddad, G.I.
Published in IEEE transactions on electron devices (01.11.1996)
Published in IEEE transactions on electron devices (01.11.1996)
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Journal Article
Development of integrated heterostructures on silicon by MBE
Droopad, Ravi, Yu, Zhiyi, Li, Hao, Liang, Yong, Overgaard, Corey, Demkov, Alex, Zhang, Xiaodong, Moore, Karen, Eisenbeiser, Kurt, Hu, Mike, Curless, Jay, Finder, Jeff
Published in Journal of crystal growth (01.04.2003)
Published in Journal of crystal growth (01.04.2003)
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Journal Article
Conference Proceeding
High breakdown voltage, sub-micron, strained InGaAlAs/GaAs FET's
Eisenbeiser, K.W., East, J.R., Haddad, G.I., Brock, T.
Published in 1992 IEEE MTT-S Microwave Symposium Digest (1992)
Published in 1992 IEEE MTT-S Microwave Symposium Digest (1992)
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Conference Proceeding
Journal Article
Epitaxial oxides on silicon grown by molecular beam epitaxy
Droopad, Ravi, Yu, Zhiyi, Ramdani, Jamal, Hilt, Lyndee, Curless, Jay, Overgaard, Corey, Edwards, John L, Finder, Jeff, Eisenbeiser, Kurt, Wang, Jun, Kaushik, V, Ngyuen, B-Y, Ooms, Bill
Published in Journal of crystal growth (01.07.2001)
Published in Journal of crystal growth (01.07.2001)
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Journal Article
GaAs MESFETs fabricated on Si substrates using a SrTiO sub(3) buffer layer
Eisenbeiser, K, Emrick, R, Droopad, R, Yu, Z, Finder, J, Rockwell, S, Holmes, J, Overgaard, C, Ooms, W
Published in IEEE electron device letters (01.06.2002)
Published in IEEE electron device letters (01.06.2002)
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Journal Article
GaAs MESFETs fabricated on Si substrates using a SrTiO(3)buffer layer
Eisenbeiser, K, Emrick, R, Droopad, R, Yu, Z, Finder, J, Rockwell, S, Holmes, J, Overgaard, C, Ooms, W
Published in IEEE electron device letters (01.06.2002)
Published in IEEE electron device letters (01.06.2002)
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Journal Article
Epitaxial Pb(Zr,Ti)O sub(3) Capacitors on Si by Liquid Delivery Metalorganic Chemical Vapor Deposition
Yang, SY, Liu, B T, Ouyang, J, Nagarajan, V, Kulkarni, V N, Ramesh, R, Kidder, J, Droopad, R, Eisenbeiser, K
Published in Journal of electroceramics (01.01.2005)
Published in Journal of electroceramics (01.01.2005)
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Journal Article