Elucidation of New Turn-on Voltage Tail Phenomenon of IGBT and Improvement by Dynamic-CSL Structure
Kuroda, Ryota, Eikyu, Katsumi, Nakanishi, Sho, Matsuura, Hitoshi
Published in 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (02.06.2024)
Published in 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (02.06.2024)
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Conference Proceeding
Full-chip simulation analysis of power MOSFET's during unclamped inductive switching with physics-base device models
Kachi, Tsuyoshi, Eikyu, Katsumi, Saito, Takashi
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
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Conference Proceeding
Simulation of Dopant Redistribution During Gate Oxidation Including Transient-Enhanced Diffusion Caused by Implantation Damage
Tetsuya Uchida, Tetsuya Uchida, Katsumi Eikyu, Katsumi Eikyu, Eiji Tsukuda, Eiji Tsukuda, Masato Fujinaga, Masato Fujinaga, Akinobu Teramoto, Akinobu Teramoto, Tomohiro Yamashita, Tomohiro Yamashita, Tatsuya Kunikiyo, Tatsuya Kunikiyo, Kiyoshi Ishikawa, Kiyoshi Ishikawa, Norihiko Kotani, Norihiko Kotani, Satoru Kawazu, Satoru Kawazu, Chihiro Hamaguchi, Chihiro Hamaguchi, Tadashi Nishimura, Tadashi Nishimura
Published in Japanese Journal of Applied Physics (01.05.2000)
Published in Japanese Journal of Applied Physics (01.05.2000)
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Journal Article
On the scaling limit of the Si-IGBTs with very narrow mesa structure
Eikyu, Katsumi, Sakai, Atsushi, Matsuura, Hitoshi, Nakazawa, Yoshito, Akiyama, Yutaka, Yamaguchi, Yasuo, Inuishi, Masahide
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
Published in 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.06.2016)
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Conference Proceeding
Journal Article
Global Identification of Variability Factors and Its Application to the Statistical Worst-Case Model Generation
Eikyu, K., Okagaki, T., Tanizawa, M., Ishikawa, K., Eimori, T., Tsuchiya, O.
Published in 2006 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2006)
Published in 2006 International Conference on Simulation of Semiconductor Processes and Devices (01.09.2006)
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Conference Proceeding
Inverse Modeling of 4H-SiC Trench Gate MOSFETs Validated with Electrical and Physical Characterization
Akiyama, Yutaka, Eikyu, Katsumi, Arie, Hiroyuki, Sakai, Atsushi, Yamashita, Tomohiro, Arai, Koichi, Hisada, Kenichi, Yamashita, Yasuhiro
Published in Materials science forum (19.07.2019)
Published in Materials science forum (19.07.2019)
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Journal Article
A Robust SOI SRAM Architecture by using Advanced ABC technology for 32nm node and beyond LSTP devices
Hirano, Y., Tsujiuchi, M., Ishikawa, K., Shinohara, H., Terada, T., Maki, Y., Iwamatsu, T., Eikyu, K., Uchida, T., Obayashi, S., Nii, K., Tsukamoto, Y., Yabuuchi, M., Ipposhi, T., Oda, H., Inoue, Y.
Published in 2007 IEEE Symposium on VLSI Technology (01.06.2007)
Published in 2007 IEEE Symposium on VLSI Technology (01.06.2007)
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Conference Proceeding
Analysis of Anomalous Behavior during Negative Drain Input Operation of Fully Isolated nLDMOS
Sakai, Atsushi, Eikyu, Katsumi, Goto, Yotaro, Koshimizu, Makoto, Sonoda, Kenichiro, Ogata, Tamotsu
Published in 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (30.05.2021)
Published in 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (30.05.2021)
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Conference Proceeding
Modified Gate Re-Oxidation Technology for High-Performance Embedded Dynamic RAM by Self-Adjusted Gate Bird's Beak
Nishida, Yukio, Ueno, Shuichi, Uchida, Tetsuya, Eikyu, Katsumi, Kinugasa, Akinori, Terauchi, Takashi, Tsunomura, Takaaki, Takeuchi, Masahiko, Shirahata, Masayoshi, Eimori, Takahisa, Inoue, Yasuo
Published in Japanese Journal of Applied Physics (2003)
Published in Japanese Journal of Applied Physics (2003)
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Journal Article
Simple and efficient approach to improve hot carrier immunity of a p-LDMOSFET
Sakai, Atsushi, Eikyu, Katsumi, Fujii, Hiroki, Mori, Takahiro, Akiyama, Yutaka, Yamaguchi, Yasuo
Published in 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) (01.05.2017)
Published in 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) (01.05.2017)
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Conference Proceeding
Impacts of the 4H-SiC/SiO2 interface states on the switching operation of power MOSFETs
Sakai, Atsushi, Eikyu, Katsumi, Sonoda, Kenichiro, Hisada, Kenichi, Arai, Koichi, Yamamoto, Yoichi, Tanizawa, Motoaki, Yamaguchi, Yasuo
Published in 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2015)
Published in 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2015)
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Conference Proceeding
Impacts of the 4H-SiC/SiO sub(2) interface states on the switching operation of power MOSFETs
Sakai, Atsushi, Eikyu, Katsumi, Sonoda, Kenichiro, Hisada, Kenichi, Arai, Koichi, Yamamoto, Yoichi, Tanizawa, Motoaki, Yamaguchi, Yasuo
Published in International Conference on Simulation of Semiconductor Processes and Devices (01.09.2015)
Published in International Conference on Simulation of Semiconductor Processes and Devices (01.09.2015)
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Journal Article
Analytical Approach for Enhancement of n-Channel Metal--Oxide--Semiconductor Field-Effect Transistor Performance with Carbon-Doped Source/Drain Formed by Molecular Carbon Ion Implantation and Laser Annealing
Yamaguchi, Tadashi, Kawasaki, Yoji, Yamashita, Tomohiro, Miura, Noriko, Mizuo, Mariko, Tsuchimoto, Jun-ichi, Eikyu, Katsumi, Maekawa, Kazuyoshi, Fujisawa, Masahiko, Asai, Koyu
Published in Japanese Journal of Applied Physics (01.04.2011)
Published in Japanese Journal of Applied Physics (01.04.2011)
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Journal Article