Demonstration of Highly Robust 5 nm Hf0.5Zr0.5O₂ Ultra-Thin Ferroelectric Capacitor by Improving Interface Quality
Liang, Yan-Kui, Wu, Jui-Sheng, Teng, Chih-Yu, Ko, Hua-Lun, Luc, Quang-Ho, Su, Chun-Jung, Chang, Edward-Yi, Lin, Chun-Hsiung
Published in IEEE electron device letters (01.09.2021)
Published in IEEE electron device letters (01.09.2021)
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Journal Article
The Effect of Fluorine Doping in the Charge Trapping Layer on Device Characteristics and Reliability of E-Mode GaN MIS-HEMTs
Yang, Tsung-Ying, Wu, Sih-Rong, Wu, Jui-Sheng, Liang, Yan-Kui, Kuo, Mei-Yan, Iwai, Hiroshi, Chang, Edward-Yi
Published in IEEE transactions on electron devices (01.06.2024)
Published in IEEE transactions on electron devices (01.06.2024)
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Journal Article
Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate
Weng, You-Chen, Hsiao, Ming-Yao, Lin, Chun-Hsiung, Lan, Yu-Pin, Chang, Edward-Yi
Published in Materials (26.04.2023)
Published in Materials (26.04.2023)
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Journal Article
Electrical Characteristics of Ultrathin InZnO Thin-Film Transistors Prepared by Atomic Layer Deposition
Liang, Yan-Kui, Lin, Jing-Wei, Peng, Li-Chi, Hua, Yi Miao, Chou, Tsung-Te, Kei, Chi-Chung, Lu, Chun-Chieh, Huang, Huai-Ying, Yeong, Sai Hooi, Lin, Yu-Ming, Liu, Po-Tsun, Chang, Edward-Yi, Lin, Chun-Hsiung
Published in IEEE transactions on electron devices (01.03.2023)
Published in IEEE transactions on electron devices (01.03.2023)
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Journal Article
Resonant Mechanism for a Long-Distance Wireless Power Transfer Using Class E PA and GaN HEMT
Liu, Ching-Yao, Wu, Chih-Chiang, Tang, Li-Chuan, Shieh, Yueh-Tsung, Chieng, Wei-Hua, Chang, Edward-Yi
Published in Energies (Basel) (24.04.2023)
Published in Energies (Basel) (24.04.2023)
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Journal Article
RF loss mechanisms in GaN‐based high‐electron‐mobility‐transistor on silicon: Role of an inversion channel at the AlN/Si interface
Luong, Tien Tung, Lumbantoruan, Franky, Chen, Yen‐Yu, Ho, Yen‐Teng, Weng, You‐Chen, Lin, Yueh‐Chin, Chang, Shane, Chang, Edward‐Yi
Published in Physica status solidi. A, Applications and materials science (01.07.2017)
Published in Physica status solidi. A, Applications and materials science (01.07.2017)
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Journal Article
Discontinuous Current Mode Modeling and Zero Current Switching of Flyback Converter
Kumar, Rustam, Wu, Chih-Chiang, Liu, Ching-Yao, Hsiao, Yu-Lin, Chieng, Wei-Hua, Chang, Edward-Yi
Published in Energies (Basel) (01.09.2021)
Published in Energies (Basel) (01.09.2021)
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Journal Article
Power Receiving Unit for High-Power Resonant Wireless Power Transfer
Liu, Ching-Yao, Tang, Hsien-Chung, Shieh, Yueh-Tsung, Wu, Chih-Chiang, Chieng, Wei-Hua, Chang, Edward-Yi, Ueda, Daisuke
Published in Energies (Basel) (01.12.2023)
Published in Energies (Basel) (01.12.2023)
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Journal Article
InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications
Chang, Edward-Yi, Kuo, Chien-I, Hsu, Heng-Tung, Chiang, Che-Yang, Miyamoto, Yasuyuki
Published in Applied physics express (01.03.2013)
Published in Applied physics express (01.03.2013)
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Journal Article
Variable-Frequency Pulse Width Modulation Circuits for Resonant Wireless Power Transfer
Tang, Li-Chuan, Jeng, Shyr-Long, Chang, Edward-Yi, Chieng, Wei-Hua
Published in Energies (Basel) (01.06.2021)
Published in Energies (Basel) (01.06.2021)
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Journal Article
A Normally-Off GaN MIS-HEMT Fabricated Using Atomic Layer Etching to Improve Device Performance Uniformity for High Power Applications
Yang, Tsung-Ying, Huang, Huuan-Yao, Liang, Yan-Kui, Wu, Jui-Sheng, Kuo, Mei-Yan, Chang, Kuan-Pang, Hsu, Heng-Tung, Chang, Edward-Yi
Published in IEEE electron device letters (01.10.2022)
Published in IEEE electron device letters (01.10.2022)
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Journal Article
Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications
Lee, Ming-Wen, Chuang, Cheng-Wei, Gamiz, Francisco, Chang, Edward-Yi, Lin, Yueh-Chin
Published in Micromachines (Basel) (01.01.2024)
Published in Micromachines (Basel) (01.01.2024)
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Journal Article
Flyback Converter Using a D-Mode GaN HEMT Synchronous Rectifier
Shieh, Yueh-Tsung, Liu, Ching-Yao, Wu, Chih-Chiang, Chieng, Wei-Hua, Chang, Edward-Yi
Published in Energies (Basel) (01.05.2022)
Published in Energies (Basel) (01.05.2022)
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Journal Article
A Turn-Ratio-Changing Half-Bridge CLLC DC–DC Bidirectional Battery Charger Using a GaN HEMT
Shieh, Yueh-Tsung, Wu, Chih-Chiang, Jeng, Shyr-Long, Liu, Ching-Yao, Hsieh, Shiang-Yu, Haung, Chi-Chun, Shieh, Wen-Yuh, Chieng, Wei-Hua, Chang, Edward-Yi
Published in Energies (Basel) (01.08.2023)
Published in Energies (Basel) (01.08.2023)
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Journal Article
Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications
Wang, Chun, Chen, Yu-Chiao, Hsu, Heng-Tung, Tsao, Yi-Fan, Lin, Yueh-Chin, Dee, Chang-Fu, Chang, Edward-Yi
Published in Materials (01.11.2021)
Published in Materials (01.11.2021)
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Journal Article
Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications
Lee, Ming-Wen, Lin, Yueh-Chin, Hsu, Heng-Tung, Gamiz, Francisco, Chang, Edward-Yi
Published in Micromachines (Basel) (25.04.2023)
Published in Micromachines (Basel) (25.04.2023)
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Journal Article
A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer
Weng, You-Chen, Lin, Yueh-Chin, Hsu, Heng-Tung, Kao, Min-Lu, Huang, Hsuan-Yao, Ueda, Daisuke, Ha, Minh-Thien-Huu, Yang, Chih-Yi, Maa, Jer-Shen, Chang, Edward-Yi, Dee, Chang-Fu
Published in Materials (18.01.2022)
Published in Materials (18.01.2022)
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Journal Article
Analysis of Leakage Current Mechanism for Ni/Au Schottky Contact on InAlGaN/GaN HEMT
Lumbantoruan, Franky, Wu, Chia‐Hsun, Zheng, Xia‐Xi, Singh, Sankalp K., Dee, Chang‐Fu, Majlis, Burhanuddin Y., Chang, Edward‐Yi
Published in Physica status solidi. A, Applications and materials science (06.06.2018)
Published in Physica status solidi. A, Applications and materials science (06.06.2018)
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Journal Article