The Effect of an Fe-doped GaN Buffer on off-State Breakdown Characteristics in AlGaN/GaN HEMTs on Si Substrate
Choi, Young Chul, Pophristic, Milan, Cha, Ho-Young, Peres, Boris, Spencer, Michael G., Eastman, Lester F.
Published in IEEE transactions on electron devices (01.12.2006)
Published in IEEE transactions on electron devices (01.12.2006)
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Journal Article
Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures
Hofstetter, Daniel, Rana, Farhan, Kandaswamy, Prem K., Guillot, Fabien, Monroy, Eva, Baumann, Esther, Giorgetta, Fabrizio Raphael, Theron, Ricardo, Wu, Hong, Schaff, William J., Dawlaty, Jahan, George, Paul A., Eastman, Lester F.
Published in Proceedings of the IEEE (01.07.2010)
Published in Proceedings of the IEEE (01.07.2010)
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Journal Article
Photodetectors based on intersubband transitions using III-nitride superlattice structures
Hofstetter, Daniel, Baumann, Esther, Giorgetta, Fabrizio R, Théron, Ricardo, Wu, Hong, Schaff, William J, Dawlaty, Jahan, George, Paul A, Eastman, Lester F, Rana, Farhan, Kandaswamy, Prem K, Leconte, Sylvain, Monroy, Eva
Published in Journal of physics. Condensed matter (29.04.2009)
Published in Journal of physics. Condensed matter (29.04.2009)
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Journal Article
Investigation of multiple carrier effects in InN epilayers using variable magnetic field Hall measurements
Swartz, Craig H, Tompkins, Randy P, Giles, Nancy C, Myers, Thomas H, Lu, Hai, Schaff, William J, Eastman, Lester F
Published in Journal of crystal growth (01.08.2004)
Published in Journal of crystal growth (01.08.2004)
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Journal Article
Conference Proceeding
Electrical properties of InGaN grown by molecular beam epitaxy
Schaff, William J., Chen, Xiaodong, Hao, Dong, Matthews, Kris, Richards, Troy, Eastman, Lester F., Lu, Hai, Cho, Clara Ji-Hyun, Cha, Ho-Young
Published in Physica Status Solidi (b) (01.05.2008)
Published in Physica Status Solidi (b) (01.05.2008)
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Journal Article
Conference Proceeding
Surface chemical modification of InN for sensor applications
Lu, Hai, Schaff, William J., Eastman, Lester F.
Published in Journal of applied physics (15.09.2004)
Published in Journal of applied physics (15.09.2004)
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Journal Article
Transient electron transport in wurtzite GaN, InN, and AlN
Foutz, Brian E., O’Leary, Stephen K., Shur, Michael S., Eastman, Lester F.
Published in Journal of applied physics (01.06.1999)
Published in Journal of applied physics (01.06.1999)
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Journal Article
Steady-state and transient electron transport within bulk wurtzite zinc oxide
O’Leary, Stephen K., Foutz, Brian E., Shur, Michael S., Eastman, Lester F.
Published in Solid state communications (01.11.2010)
Published in Solid state communications (01.11.2010)
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Journal Article
Comparison of GaN HEMTs on Diamond and SiC Substrates
Felbinger, J.G., Chandra, M.V.S., Yunju Sun, Eastman, L.F., Wasserbauer, J., Faili, F., Babic, D., Francis, D., Ejeckam, F.
Published in IEEE electron device letters (01.11.2007)
Published in IEEE electron device letters (01.11.2007)
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Journal Article
The polarization-induced electron gas in a heterostructure
Ridley, B K, Ambacher, O, Eastman, Lester F
Published in Semiconductor science and technology (01.03.2000)
Published in Semiconductor science and technology (01.03.2000)
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Journal Article
The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
Green, B.M., Chu, K.K., Chumbes, E.M., Smart, J.A., Shealy, J.R., Eastman, L.F.
Published in IEEE electron device letters (01.06.2000)
Published in IEEE electron device letters (01.06.2000)
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Journal Article
Scattering of electrons at threading dislocations in GaN
Weimann, Nils G., Eastman, Lester F., Doppalapudi, Dharanipal, Ng, Hock M., Moustakas, Theodore D.
Published in Journal of applied physics (01.04.1998)
Published in Journal of applied physics (01.04.1998)
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Journal Article
The sensitivity of the electron transport within bulk wurtzite indium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient: an updated Monte Carlo analysis
O’Leary, Stephen K., Foutz, Brian E., Shur, Michael S., Eastman, Lester F.
Published in Journal of materials science. Materials in electronics (01.03.2010)
Published in Journal of materials science. Materials in electronics (01.03.2010)
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Journal Article
Fabrication and Characterization of Thin-Barrier Al0.5Ga0.5N/AlN/GaN HEMTs
FELBINGER, Jonathan G, FAGERLIND, Martin, AXELSSON, Olle, RORSMAN, Niklas, XIANG GAO, SHIPING GUO, SCHAFF, William J, EASTMAN, Lester F
Published in IEEE electron device letters (01.07.2011)
Published in IEEE electron device letters (01.07.2011)
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Journal Article
Electron transport in wurtzite indium nitride
O’Leary, Stephen K., Foutz, Brian E., Shur, Michael S., Bhapkar, Udayan V., Eastman, Lester F.
Published in Journal of applied physics (15.01.1998)
Published in Journal of applied physics (15.01.1998)
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