Selective area growth of AlGaN nanopyramids by conventional and pulsed MOVPE
Boughaleb, Sofia, Martin, Brigitte, Matei, Constantin, Templier, Roselyne, Borowik, Łukasz, Rochat, Nevine, Gil, Bernard, Dussaigne, Amélie
Published in Nanotechnology (07.05.2021)
Published in Nanotechnology (07.05.2021)
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Journal Article
Three-dimensional measurement of Mg dopant distribution and electrical activity in GaN by correlative atom probe tomography and off-axis electron holography
Amichi, Lynda, Mouton, Isabelle, Di Russo, Enrico, Boureau, Victor, Barbier, Frédéric, Dussaigne, Amélie, Grenier, Adeline, Jouneau, Pierre-Henri, Bougerol, Catherine, Cooper, David
Published in Journal of applied physics (14.02.2020)
Published in Journal of applied physics (14.02.2020)
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Journal Article
Unravelling the unwanted Ga incorporation effect on InGaN epilayers grown in CCS MOVPE reactors
Mrad, Mrad, Licitra, Christophe, Dussaigne, Amélie, Yon, Victor, Richy, Jérôme, Lafossas, Matthieu, Kanyandekwe, Joel, Feuillet, Guy, Charles, Matthew
Published in Journal of crystal growth (15.04.2020)
Published in Journal of crystal growth (15.04.2020)
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Journal Article
Crack-Free AlN Film Grown on Sputtered-AlN/2D MoS2 Seed Layers on a Si(100)-Based Wafer: Implications for Radio-Frequency Acoustic Filters
Hyot, Bérangère, Dussaigne, Amélie, Patouillard, Julien, Gassilloud, Rémy, Bernard, Mathieu, Cadot, Stéphane, Barbier, Frédéric, Veux, Guillaume, Gauthier, Nicolas, Vaxelaire, Nicolas, Bernier, Nicolas, Gianesello, Frédéric, Raynaud, Christine
Published in ACS applied nano materials (14.06.2024)
Published in ACS applied nano materials (14.06.2024)
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Journal Article
Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications
Salomon, Damien, Dussaigne, Amelie, Lafossas, Matthieu, Durand, Christophe, Bougerol, Catherine, Ferret, Pierre, Eymery, Joel
Published in Nanoscale research letters (07.02.2013)
Published in Nanoscale research letters (07.02.2013)
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Journal Article
GaN Rods Grown on Si by SAG-HVPE toward GaN HVPE/InGaN MOVPE Core/Shell Structures
Avit, Geoffrey, André, Yamina, Bougerol, Catherine, Castelluci, Dominique, Dussaigne, Amélie, Ferret, Pierre, Gaugiran, Stéphanie, Gayral, Bruno, Gil, Evelyne, Lee, Yann, Ramdani, M. Reda, Roche, Elissa, Trassoudaine, Agnès
Published in Crystal growth & design (04.05.2016)
Published in Crystal growth & design (04.05.2016)
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Journal Article
Thermal annealing of molecular beam epitaxy-grown InGaN/GaN single quantum well
Kaufmann, Nils A K, Dussaigne, Amélie, Martin, Denis, Valvin, Pierre, Guillet, Thierry, Gil, Bernard, Ivaldi, Francesco, Kret, Slawomir, Grandjean, Nicolas
Published in Semiconductor science and technology (01.10.2012)
Published in Semiconductor science and technology (01.10.2012)
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Journal Article
High-Mobility AlGaN/GaN Two-Dimensional Electron Gas Heterostructure Grown on (111) Single Crystal Diamond Substrate
Dussaigne, Amélie, Gonschorek, Marcus, Malinverni, Marco, Py, Marcel A, Martin, Denis, Mouti, Anas, Stadelmann, Pierre, Grandjean, Nicolas
Published in Japanese Journal of Applied Physics (01.06.2010)
Published in Japanese Journal of Applied Physics (01.06.2010)
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Journal Article
Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on $a$-Plane GaN Substrates
Corfdir, Pierre, Dussaigne, Amélie, Teisseyre, Henryk, Suski, Tadeusz, Grzegory, Izabella, Lefebvre, Pierre, Giraud, Etienne, Shahmohammadi, Mehran, Phillips, Richard T, Ganiere, Jean-Daniel, Grandjean, Nicolas, Deveaud, Benoît
Published in Japanese Journal of Applied Physics (01.08.2013)
Published in Japanese Journal of Applied Physics (01.08.2013)
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Journal Article
Direct Imaging of p–n Junction in Core–Shell GaN Wires
Tchoulfian, P, Donatini, F, Levy, F, Dussaigne, A, Ferret, P, Pernot, J
Published in Nano letters (11.06.2014)
Published in Nano letters (11.06.2014)
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Journal Article
Crack-Free AlN Film Grown on Sputtered-AlN/2D MoS 2 Seed Layers on a Si(100)-Based Wafer: Implications for Radio-Frequency Acoustic Filters
Hyot, Bérangère, Dussaigne, Amélie, Patouillard, Julien, Gassilloud, Rémy, Bernard, Mathieu, Cadot, Stéphane, Barbier, Frédéric, Veux, Guillaume, Gauthier, Nicolas, Vaxelaire, Nicolas, Bernier, Nicolas, Gianesello, Frédéric, Raynaud, Christine
Published in ACS applied nano materials (29.05.2024)
Published in ACS applied nano materials (29.05.2024)
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Journal Article
Exciton localization on basal stacking faults in a -plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy
Corfdir, P., Lefebvre, P., Levrat, J., Dussaigne, A., Ganière, J.-D., Martin, D, Ristić, J., Zhu, T., Grandjean, N., Deveaud-Plédran, B.
Published in Journal of applied physics (15.02.2009)
Published in Journal of applied physics (15.02.2009)
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Journal Article
Exciton recombination dynamics in a -plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence
Corfdir, P., Lefebvre, P., Balet, L., Sonderegger, S., Dussaigne, A., Zhu, T., Martin, D., Ganière, J.-D., Grandjean, N., Deveaud-Plédran, B.
Published in Journal of applied physics (15.02.2010)
Published in Journal of applied physics (15.02.2010)
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Journal Article