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Published in Semiconductor science and technology (01.01.2020)
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An extremely fast, energy-efficient RESET process in Ge 2 Sb 2 Te 5 phase change memory device revealed by the choice of electrode materials and interface effects
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Published in Semiconductor science and technology (01.01.2020)
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Published in ACS applied electronic materials (22.12.2020)
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Realization of 4-Bit Multilevel Optical Switching in Ge 2 Sb 2 Te 5 and Ag 5 In 5 Sb 60 Te 30 Phase-Change Materials Enabled in the Visible Region
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Published in ACS applied electronic materials (22.12.2020)
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