Mid-infrared GaSb-based EP-VCSEL emitting at 2.63 μm
DUCANCHEZ, A, CERUTTI, L, GRECH, P, GENTY, F, TOURNIE, E
Published in Electronics letters (26.02.2009)
Published in Electronics letters (26.02.2009)
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Journal Article
GaSb-based VCSELs emitting in the mid-infrared wavelength range (2–3 μm) grown by MBE
Cerutti, L., Ducanchez, A., Narcy, G., Grech, P., Boissier, G., Garnache, A., Tournié, E., Genty, F.
Published in Journal of crystal growth (15.03.2009)
Published in Journal of crystal growth (15.03.2009)
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Journal Article
Conference Proceeding
Room-temperature, monolithic, electrically-pumped type-L quantum-well Sb-based VCSELs emitting at 2.3 μm
CERUTTI, L, DUCANCHEZ, A, GRECH, P, GAMACHE, A, GENTY, F
Published in Electronics letters (31.01.2008)
Published in Electronics letters (31.01.2008)
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Journal Article
Fabrication and Characterization of GaSb-Based Monolithic Resonant-Cavity Light-Emitting Diodes Emitting Around 2.3 μm and Including a Tunnel Junction
Ducanchez, A., Cerutti, L., Gassenq, A., Grech, P., Genty, F.
Published in IEEE journal of selected topics in quantum electronics (01.07.2008)
Published in IEEE journal of selected topics in quantum electronics (01.07.2008)
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Journal Article
AlAsSb/GaSb doped distributed Bragg reflectors for electrically pumped VCSELs emitting around 2.3 μm
PERONA, A, GARNACHE, A, CERUTTI, L, DUCANCHEZ, A, MIHINDOU, S, GRECH, P, BOISSIER, G, GENTY, F
Published in Semiconductor science and technology (01.10.2007)
Published in Semiconductor science and technology (01.10.2007)
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Journal Article
Mid-infrared GaSb-based EP-VCSEL emitting at 2.63 µm
Ducanchez, A, Cerutti, L, Grech, P, Genty, F, Tournié, E
Published in Electronics letters (26.02.2009)
Get full text
Published in Electronics letters (26.02.2009)
Journal Article
Mid-infrared GaSb-based EP-VCSEL emitting at 2.63 mu m
Ducanchez, A, Cerutti, L, Grech, P, Genty, F, Tournie, E
Published in Electronics letters (01.02.2009)
Get full text
Published in Electronics letters (01.02.2009)
Journal Article
Mid-infrared GaSb-based EP-VCSEL emitting at 2.63 [micro sign]m
Ducanchez, A., Cerutti, L., Grech, P., Genty, F., Tournié, E.
Published in Electronics letters (2009)
Published in Electronics letters (2009)
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Journal Article
Fabrication and Characterization of GaSb-Based Monolithic Resonant-Cavity Light-Emitting Diodes Emitting Around 2.3 [mu]m and Including a Tunnel Junction
Ducanchez, A, Cerutti, L, Gassenq, A, Grech, P, Genty, F
Published in IEEE journal of selected topics in quantum electronics (01.07.2008)
Published in IEEE journal of selected topics in quantum electronics (01.07.2008)
Get full text
Journal Article
Room-temperature, monolithic, electrically-pumped type-L quantum-well Sb-based VCSELs emitting at 2.3mum
Cerutti, L, Ducanchez, A, Grech, P, Garnache, A, Genty, F
Published in Electronics letters (31.01.2008)
Published in Electronics letters (31.01.2008)
Get full text
Journal Article
Room-temperature, monolithic, electrically-pumped type-L quantum-well Sb-based VCSELs emitting at 2.3 µm
Cerutti, L, Ducanchez, A, Grech, P, Garnache, A, Genty, F
Published in Electronics letters (31.01.2008)
Get full text
Published in Electronics letters (31.01.2008)
Journal Article
Room-temperature, monolithic, electrically-pumped type-L quantum-well Sb-based VCSELs emitting at 2.3 mu m
Cerutti, L, Ducanchez, A, Grech, P, Garnache, A, Genty, F
Published in Electronics letters (01.01.2008)
Get full text
Published in Electronics letters (01.01.2008)
Journal Article