Growth of (1 0 1¯ 3¯ ) semipolar GaN on m-plane sapphire by hydride vapor phase epitaxy
Wei, T.B., Hu, Q., Duan, R.F., Wei, X.C., Huo, Z.Q., Wang, J.X., Zeng, Y.P., Wang, G.H., Li, J.M.
Published in Journal of crystal growth (15.08.2009)
Published in Journal of crystal growth (15.08.2009)
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Journal Article
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching
Wei, T.B., Yang, J.K., Hu, Q., Duan, R.F., Huo, Z.Q., Wang, J.X., Zeng, Y.P., Wang, G.H., Li, J.M.
Published in Journal of crystal growth (2011)
Published in Journal of crystal growth (2011)
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Journal Article
Hydride vapor phase epitaxy of strain-reduced GaN film on nano-island template produced using self-assembled CsCl nanospheres
Wei, T.B., Chen, Y., Hu, Q., Yang, J.K., Huo, Z.Q., Duan, R.F., Wang, J.X., Zeng, Y.P., Li, J.M., Liao, Y.X., Yin, F.T.
Published in Materials letters (01.02.2012)
Published in Materials letters (01.02.2012)
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Journal Article
Cathodoluminescence and Raman research of V-shape inverted pyramid in HVPE grown GaN film
Wei, T.B., Ma, P., Duan, R.F., Wang, J.X., Li, J.M., Liu, Zh, Zeng, Y.P.
Published in Materials letters (01.07.2007)
Published in Materials letters (01.07.2007)
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Journal Article
Hillocks and hexagonal pits in a thick film grown by HVPE
Wei, T.B., Duan, R.F., Wang, J.X., Li, J.M., Huo, Z.Q., Zeng, Y.P.
Published in Microelectronics (01.12.2008)
Published in Microelectronics (01.12.2008)
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Journal Article
Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer
Wei, T.B., Duan, R.F., Wang, J.X., Li, J.M., Huo, Z.Q., Ma, P., Liu, Zh, Zeng, Y.P.
Published in Applied surface science (15.07.2007)
Published in Applied surface science (15.07.2007)
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