Degradation of TiAlNiAu as ohmic contact metal for GaN HEMTs
Piazza, Michele, Dua, Christian, Oualli, Mourad, Morvan, Erwan, Carisetti, Dominique, Wyczisk, Frédéric
Published in Microelectronics and reliability (01.09.2009)
Published in Microelectronics and reliability (01.09.2009)
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Journal Article
Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors
Kuzmik, Jan, Vitanov, Stanislav, Dua, Christian, Carlin, Jean-Francois, Ostermaier, Clemens, Alexewicz, Alexander, Strasser, Gottfried, Pogany, Dionyz, Gornik, Erich, Grandjean, Nicolas, Delage, Sylvain, Palankovski, Vassil
Published in Japanese Journal of Applied Physics (01.05.2012)
Published in Japanese Journal of Applied Physics (01.05.2012)
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Journal Article
Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors
Kuzmik, Jan, Vitanov, Stanislav, Dua, Christian, Carlin, Jean-Francois, Ostermaier, Clemens, Alexewicz, Alexander, Strasser, Gottfried, Pogany, Dionyz, Gornik, Erich, Grandjean, Nicolas, Delage, Sylvain, Palankovski, Vassil
Published in Japanese Journal of Applied Physics (01.05.2012)
Published in Japanese Journal of Applied Physics (01.05.2012)
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Journal Article
InAlGaN/GaN with AlGaN back-barrier HEMT technology on SiC for Ka-band applications
Piotrowicz, Stéphane, Jacquet, Jean-Claude, Gamarra, Piero, Patard, Olivier, Dua, Christian, Chartier, Eric, Michel, Nicolas, Oualli, Mourad, Lacam, Cedric, Potier, Clément, Altuntas, Philippe, Delage, Sylvain
Published in International journal of microwave and wireless technologies (01.02.2018)
Published in International journal of microwave and wireless technologies (01.02.2018)
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Journal Article
Highlighting trapping phenomena in microwave GaN HEMTs by low-frequency S-parameters
Potier, Clément, Jacquet, Jean-Claude, Dua, Christian, Martin, Audrey, Campovecchio, Michel, Oualli, Mourad, Jardel, Olivier, Piotrowicz, Stéphane, Laurent, Sylvain, Aubry, Raphaël, Patard, Olivier, Gamarra, Piero, di Forte-Poisson, Marie-Antoinette, Delage, Sylvain L., Quéré, Raymond
Published in International journal of microwave and wireless technologies (01.06.2015)
Published in International journal of microwave and wireless technologies (01.06.2015)
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Journal Article
InAlN/GaN HEMTs based L-band high-power packaged amplifiers
Jardel, Olivier, Jacquet, Jean-Claude, Baczkowski, Lény, Carisetti, Dominique, Lancereau, Didier, Olivier, Maxime, Aubry, Raphaël, di Forte Poisson, Marie-Antoinette, Dua, Christian, Piotrowicz, Stéphane, Delage, Sylvain L.
Published in International journal of microwave and wireless technologies (01.12.2014)
Published in International journal of microwave and wireless technologies (01.12.2014)
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Journal Article
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences
Rossetto, Isabella, Rampazzo, Fabiana, Gerardin, Simone, Meneghini, Matteo, Bagatin, Marta, Zanandrea, Alberto, Paccagnella, Alessandro, Meneghesso, Gaudenzio, Zanoni, Enrico, Dua, Christian, di Forte-Poisson, Marie-Antoinette, Aubry, Raphael, Oualli, Mourad, Delage, Sylvain L.
Published in 2014 44th European Solid State Device Research Conference (ESSDERC) (01.09.2014)
Published in 2014 44th European Solid State Device Research Conference (ESSDERC) (01.09.2014)
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Conference Proceeding
Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs
Malbert, N., Labat, N., Curutchet, A., Sury, C., Hoel, V., de Jaeger, J.-C., Defrance, N., Douvry, Y., Dua, C., Oualli, M., Bru-Chevallier, C., Bluet, J.-M., Chikhaoui, W.
Published in Microelectronics and reliability (2009)
Published in Microelectronics and reliability (2009)
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Journal Article
Optimized ohmic contacts for InAlGaN/GaN HEMTs
Ruterana, Pierre, Chauvat, Marie-Pierre, Morales, Magali, Medjdoub, Farid, Gamarra, Piero, Dua, Christian, Delage, Sylvain
Published in 2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) (23.10.2022)
Published in 2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) (23.10.2022)
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Conference Proceeding
AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements
Sozza, A., Curutchet, A., Dua, C., Malbert, N., Labat, N., Touboul, A.
Published in Microelectronics and reliability (01.09.2006)
Published in Microelectronics and reliability (01.09.2006)
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Journal Article
Conference Proceeding
Characterization and analysis of trap-related effects in AlGaAs-GaN HEMTs
Faqir, Mohamed, Verzellesi F. Fantini F. Danesin F. Rampazzo G. Meneghesso E. Zanoni A. Cavallini A. Castaldini, G., Labat, Nathalie, Dua, Christian, Touboul, A.
Published in Microelectronics and reliability (01.10.2007)
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Published in Microelectronics and reliability (01.10.2007)
Journal Article
Testing the Temperature Limits of GaN-Based HEMT Devices
Maier, David, Alomari, Mohammed, Grandjean, Nicolas, Carlin, Jean-Francois, Diforte-Poisson, Marie-Antoinette, Dua, Christian, Chuvilin, Andrey, Troadec, David, Gaquière, Christophe, Kaiser, Ute, Delage, Sylvain L, Kohn, Erhard
Published in IEEE transactions on device and materials reliability (01.12.2010)
Published in IEEE transactions on device and materials reliability (01.12.2010)
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Magazine Article
Degradation of TiA1NiAu as ohmic contact metal for GaN HEMTs
PIAZZA, Michele, DUA, Christian, OUALLI, Mourad, MORVAN, Erwan, CARISETTI, Dominique, WYCZISK, Frédéric
Published in Microelectronics and reliability (2009)
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Published in Microelectronics and reliability (2009)
Conference Proceeding
Conductance deep-level transient spectroscopy study of 1 μm gate length 4H-SiC MESFETs
Gassoumi, Malek, Bluet, Jean-Marie, Dermoul, Imène, Maaref, Hassen, Guillot, Gérard, Morvan, Erwan, Dua, Christian, Brylinski, Christian
Published in Solid-state electronics (01.02.2006)
Published in Solid-state electronics (01.02.2006)
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Journal Article
Overview of AlGaN/GaN HEMT technology for L- to Ku-band applications
Piotrowicz, Stéphane, Morvan, Erwan, Aubry, Raphaël, Callet, Guillaume, Chartier, Eric, Dua, Christian, Dufraisse, Jérémy, Floriot, Didier, Jacquet, Jean-Claude, Jardel, Olivier, Mancuso, Yves, Mallet-Guy, Benoit, Oualli, Mourad, Ouarch, Zineb, Di-Forte Poisson, Marie-Antoinette, Sarazin, Nicolas, Stanislawiak, Michel, Delage, Sylvain
Published in International journal of microwave and wireless technologies (01.02.2010)
Published in International journal of microwave and wireless technologies (01.02.2010)
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Journal Article
Monolithic broadband transimpedance amplifiers and their high frequency small and large signal characteristics using CBE-based GaInP/GaAs HBT technology
Park, Jae-Woo, Mohammadi, Saeed, Pavlidis, Dimitris, Dua, Christian, Guyaux, Jean-Luc, Garcia, Jean-Charles
Published in Solid-state electronics (01.11.2000)
Published in Solid-state electronics (01.11.2000)
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Journal Article
GaInP/GaAs HBT broadband monolithic transimpedance amplifiers and their high frequency small and large signal characteristics
Jae-Woo Park, Mohammadi, S., Pavlidis, D., Dua, C., Guyaux, J.L., Garcia, J.-G.
Published in 1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192) (1998)
Published in 1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192) (1998)
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Conference Proceeding
Mechanisms of RF Current Collapse in AlGaN-GaN High Electron Mobility Transistors
Faqir, M., Verzellesi, G., Chini, A., Fantini, F., Danesin, F., Meneghesso, G., Zanoni, E., Dua, C.
Published in IEEE transactions on device and materials reliability (01.06.2008)
Published in IEEE transactions on device and materials reliability (01.06.2008)
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Magazine Article