Worst-case bias during total dose irradiation of SOI transistors
Ferlet-Cavrois, V., Colladant, T., Paillet, P., Leray, J.L., Musseau, O., Schwank, J.R., Shaneyfelt, M.R., Pelloie, J.L., du Port de Poncharra, J.
Published in IEEE transactions on nuclear science (01.12.2000)
Published in IEEE transactions on nuclear science (01.12.2000)
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Journal Article
Characterization of the parasitic bipolar amplification in SOI technologies submitted to transient irradiation
Ferlet-Cavrois, V., Marcandella, C., Giraud, G., Gasiot, G., Colladant, I., Musseau, O., Fenouillet, C., du Port de Poncharra, J.
Published in IEEE transactions on nuclear science (01.06.2002)
Published in IEEE transactions on nuclear science (01.06.2002)
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Journal Article
Comparison of the sensitivity to heavy ions of 0.25- mu m bulk and SOI technologies
Gasiot, G, Ferlet-Cavrois, V, Roche, P, Flatresse, P, D'Hose, C, Musseau, O, du Port de Poncharra, J
Published in IEEE transactions on nuclear science (01.06.2002)
Published in IEEE transactions on nuclear science (01.06.2002)
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Journal Article
New approach for SOI devices small-signal parameters extraction
Bracale, A, Ferlet-Cavrois, V, Fel, N, Pasquet, D, Gautier, J L, Pelloie, J L, Du Port de Poncharra, J
Published in Analog integrated circuits and signal processing (01.11.2000)
Published in Analog integrated circuits and signal processing (01.11.2000)
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Journal Article
Comparison of the sensitivity to heavy ions of 0.25-[micro]m bulk and SOI technologies
Gasiot, G, Ferlet-Cavrois, V, Roche, P, Flatresse, P, D'Hose, C, Musseau, O, du Port de Poncharra, J
Published in IEEE transactions on nuclear science (01.06.2002)
Published in IEEE transactions on nuclear science (01.06.2002)
Get full text
Journal Article
Comparison of the sensitivity to heavy ions of 0.25-micron bulk and SOI technologies
Gasiot, G, Ferlet-Cavrois, V, Roche, P, Flatresse, P, D'Hose, C, Musseau, O, du Port de Poncharra, J
Published in IEEE transactions on nuclear science (01.06.2002)
Get full text
Published in IEEE transactions on nuclear science (01.06.2002)
Journal Article
Comparison of the sensitivity to heavy ions of 0.25-mum bulk and SOI technologies
Gasiot, G, Ferlet-Cavrois, V, Roche, P, Flatresse, P, D' Hose, C, Musseau, O, du Port de Poncharra, J
Published in IEEE transactions on nuclear science (01.06.2002)
Published in IEEE transactions on nuclear science (01.06.2002)
Get full text
Journal Article
Comparison of the sensitivity to heavy ions of 0.25 /spl mu/m bulk and SOI technologies
Gasiot, G., Ferlet-Cavrois, V., Roche, P., Flatresse, P., D'Hose, C., Musseau, O., du Port de Poncharra, J.
Published in RADECS 2001. 2001 6th European Conference on Radiation and Its Effects on Components and Systems (Cat. No.01TH8605) (2001)
Published in RADECS 2001. 2001 6th European Conference on Radiation and Its Effects on Components and Systems (Cat. No.01TH8605) (2001)
Get full text
Conference Proceeding
Characterization of the parasitic bipolar amplification in SOI technologies submitted to transient irradiation
Ferlet-Cavrois, V., Marcandella, C., Giraud, G., Gasiot, G., Colladant, T., Musseau, O., Fenouillet, C., du Port de Poncharra, J.
Published in RADECS 2001. 2001 6th European Conference on Radiation and Its Effects on Components and Systems (Cat. No.01TH8605) (2001)
Published in RADECS 2001. 2001 6th European Conference on Radiation and Its Effects on Components and Systems (Cat. No.01TH8605) (2001)
Get full text
Conference Proceeding