Silicon Device Scaling to the Sub-10-nm Regime
Ieong, Meikei, Doris, Bruce, Kedzierski, Jakub, Rim, Ken, Yang, Min
Published in Science (American Association for the Advancement of Science) (17.12.2004)
Published in Science (American Association for the Advancement of Science) (17.12.2004)
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Journal Article
Vertical Slit FET at 7-nm Node and Beyond
Ping-Lin Yang, Hook, Terence B., Oldiges, Philip J., Doris, Bruce B.
Published in IEEE transactions on electron devices (01.08.2016)
Published in IEEE transactions on electron devices (01.08.2016)
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Journal Article
Scalability of Extremely Thin SOI (ETSOI) MOSFETs to Sub-20-nm Gate Length
Khakifirooz, A., Kangguo Cheng, Reznicek, A., Adam, T., Loubet, N., Hong He, Kuss, J., Juntao Li, Kulkarni, P., Ponoth, S., Sreenivasan, R., Qing Liu, Doris, B., Shahidi, G.
Published in IEEE electron device letters (01.02.2012)
Published in IEEE electron device letters (01.02.2012)
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Journal Article
Aggressively Scaled Strained-Silicon-on-Insulator Undoped-Body High- \kappa/Metal-Gate nFinFETs for High-Performance Logic Applications
Maitra, K, Khakifirooz, A, Kulkarni, P, Basker, V S, Faltermeier, J, Jagannathan, H, Adhikari, H, Chun-Chen Yeh, Klymko, N R, Saenger, K, Standaert, T, Miller, R J, Doris, B, Paruchuri, V K, McHerron, D, O'Neil, J, Leobundung, E, Huiming Bu
Published in IEEE electron device letters (01.06.2011)
Published in IEEE electron device letters (01.06.2011)
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Journal Article
Scalability of planar FDSOI and FinFETs and What's in store for the future beyond that?
Doris, Bruce B., Hook, Terence
Published in 2015 45th European Solid State Device Research Conference (ESSDERC) (01.09.2015)
Published in 2015 45th European Solid State Device Research Conference (ESSDERC) (01.09.2015)
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Conference Proceeding
Ultra-low resistivity in-situ phosphorus doped Si and SiC epitaxy for source/drain formation in advanced 20 nm n-type field effect transistor devices
LOUBET, Nicolas, ADAM, Thomas, DORIS, Bruce, SAMPSON, Ron, RAYMOND, Mark, QING LIU, KANGGUO CHENG, SREENIVASAN, Raghavasimhan, REZNICEK, Alexander, KHARE, Prasanna, KLEEMEIER, Walter, PARUCHURI, Vamsi
Published in Thin solid films (01.02.2012)
Published in Thin solid films (01.02.2012)
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Conference Proceeding
A review of the mechanical stressors efficiency applied to the ultra-thin body & buried oxide fully depleted silicon on insulator technology
Morin, Pierre, Maitrejean, Sylvain, Allibert, Frederic, Augendre, Emmanuel, Liu, Qing, Loubet, Nicolas, Grenouillet, Laurent, Pofelski, Alexandre, Chen, Kangguo, Khakifirooz, Ali, Wacquez, Romain, Reboh, Shay, Bonnevialle, Aurore, le Royer, Cyrille, Morand, Yves, Kanyandekwe, Joel, Chanemougamme, Daniel, Mignot, Yann, Escarabajal, Yann, Lherron, Benoit, Chafik, Fadoua, Pilorget, Sonia, Caubet, Pierre, Vinet, Maud, Clement, Laurent, Desalvo, Barbara, Doris, Bruce, Kleemeier, Walter
Published in Solid-state electronics (01.03.2016)
Published in Solid-state electronics (01.03.2016)
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Journal Article
High-Performance Partially Depleted SOI PFETs With In Situ Doped SiGe Raised Source/Drain and Implant-Free Extension
Khakifirooz, Ali, Kangguo Cheng, Jin Cai, Kimball, Anne, Kulkarni, Pranita, Reznicek, Alexander, Adam, Thomas, Edge, Lisa, Huiming Bu, Doris, Bruce, Shahidi, Ghavam
Published in IEEE electron device letters (01.03.2011)
Published in IEEE electron device letters (01.03.2011)
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Journal Article
Hole Transport in Strained and Relaxed SiGe Channel Extremely Thin SOI MOSFETs
Khakifirooz, Ali, Kangguo Cheng, Loubet, Nicolas, Nagumo, Toshiharu, Reznicek, Alexander, Qing Liu, Levin, Theodore M., Edge, Lisa F., Hong He, Kuss, James, Allibert, Frederic, Bich-Yen Nguyen, Doris, Bruce, Shahidi, Ghavam
Published in IEEE electron device letters (01.11.2013)
Published in IEEE electron device letters (01.11.2013)
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Journal Article
(Invited) Silicon Germanium FinFET Device Physics, Process Integration and Modeling Considerations
Lu, Darsen, Morin, Pierre, Sahu, Bhagawan, Hook, Terence B, Hashemi, Pouya, Scholze, Andreas, Kim, Bomsoo, Kerber, Pranita, Khakifirooz, Ali, Oldiges, Philip, Rim, Ken, Doris, Bruce
Published in ECS transactions (12.08.2014)
Published in ECS transactions (12.08.2014)
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Journal Article
Ultra-low resistivity in-situ phosphorus doped Si and SiC epitaxy for source/drain formation in advanced 20nm n-type field effect transistor devices
Loubet, Nicolas, Adam, Thomas, Raymond, Mark, Liu, Qing, Cheng, Kangguo, Sreenivasan, Raghavasimhan, Reznicek, Alexander, Khare, Prasanna, Kleemeier, Walter, Paruchuri, Vamsi, Doris, Bruce, Sampson, Ron
Published in Thin solid films (01.02.2012)
Published in Thin solid films (01.02.2012)
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Journal Article
(Invited) Germanium Enrichment for Planar-, Fin- and Nanowire-Channel MOSFETs Made on SOI
Augendre, Emmanuel, Loubet, Nicolas, Morin, Pierre Francois, Liu, Qing, Schmitt, Joël, L'Herron, Benoît, Nguyen, Phuong, Barraud, Sylvain, Hutin, Louis, Maitrejean, Sylvain, De Salvo, Barbara, Coquand, Rémi, Reboh, Shay, Venigalla, Rajasekhar, Doris, Bruce, Yamashita, Tenko, Faynot, Olivier, Vinet, Maud
Published in ECS transactions (18.08.2016)
Published in ECS transactions (18.08.2016)
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Journal Article
Mechanical Analyses of Extended and Localized UTBB Stressors Formed with Ge Enrichment Techniques
Morin, Pierre Francois, Grenouillet, Laurent, Loubet, Nicolas, Pofelski, Alexandre, Lu, Darsen, Liu, Qing, Augendre, Emmanuel, Maitrejean, Sylvain, Fiori, Vincent, de Salvo, Barbara, Doris, Bruce, Kleemeier, Walter
Published in ECS transactions (31.03.2015)
Published in ECS transactions (31.03.2015)
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Journal Article
SOI FinFET versus bulk FinFET for 10nm and below
Hook, Terence B., Allibert, F., Balakrishnan, K., Doris, Bruce, Guo, Dechao, Mavilla, Narasimha, Nowak, E., Tsutsui, G., Southwick, R., Strane, J., Xin Sun
Published in 2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) (01.10.2014)
Published in 2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) (01.10.2014)
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Conference Proceeding