Building Blocks for GaN Power Integration
Basler, Michael, Reiner, Richard, Moench, Stefan, Benkhelifa, Fouad, Doring, Philipp, Waltereit, Patrick, Quay, Rudiger, Ambacher, Oliver
Published in IEEE access (2021)
Published in IEEE access (2021)
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Journal Article
Theoretical Limits of the Matching Bandwidth and Output Power of AlScN-Based HEMTs
Doring, Philipp, Krause, Sebastian, Friesicke, Christian, Quay, Rudiger
Published in IEEE transactions on electron devices (01.03.2024)
Published in IEEE transactions on electron devices (01.03.2024)
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Journal Article
Switching of GaN CAVET With Quasi-Monolithic Integrated HEMT Gate Driver
Basler, Michael, Doring, Philipp, Monch, Stefan, Reiner, Richard, Mikulla, Michael, Quay, Rudiger
Published in IEEE electron device letters (01.08.2023)
Published in IEEE electron device letters (01.08.2023)
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Journal Article
On the origin of the turn-on voltage drop of GaN-based current aperture vertical electron transistors
Döring, Philipp, Sinnwell, Matthias, Reiner, Richard, Driad, Rachid, Waltereit, Patrick, Leone, Stefano, Müller, Stefan, Mikulla, Michael, Ambacher, Oliver
Published in Journal of applied physics (21.03.2022)
Published in Journal of applied physics (21.03.2022)
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Journal Article
A Study on the Performance of AlGaN/GaN HEMTs Regrown on Mg-Implanted GaN Layers With Low Channel Thickness
Doring, Philipp, Sinnwell, Matthias, Muller, Stefan, Czap, Heiko, Driad, Rachid, Bruckner, Peter, Kohler, Klaus, Kirste, Lutz, Mikulla, Michael, Quay, Rudiger
Published in IEEE transactions on electron devices (01.03.2023)
Published in IEEE transactions on electron devices (01.03.2023)
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Journal Article
Vertical GaN Transistor with Quasi-Monolithically Integrated HEMT Gate Driver and Sense-CAVET for Current Monitoring
Basler, Michael, Doring, Philipp, Monch, Stefan, Reiner, Richard, Driad, Rachid, Mikulla, Michael, Quay, Rudiger
Published in 2024 IEEE Applied Power Electronics Conference and Exposition (APEC) (25.02.2024)
Published in 2024 IEEE Applied Power Electronics Conference and Exposition (APEC) (25.02.2024)
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Conference Proceeding
Technology of GaN-Based Large Area CAVETs With Co-Integrated HEMTs
Doring, Philipp, Driad, Rachid, Reiner, Richard, Waltereit, Patrick, Leone, Stefano, Mikulla, Michael, Ambacher, Oliver
Published in IEEE transactions on electron devices (01.11.2021)
Published in IEEE transactions on electron devices (01.11.2021)
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Journal Article
GaN power converter and high-side IC substrate issues on Si, p-n junction, or SOI
Mönch, Stefan, Basler, Michael, Reiner, Richard, Benkhelifa, Fouad, Döring, Philipp, Sinnwell, Matthias, Müller, Stefan, Mikulla, Michael, Waltereit, Patrick, Quay, Rüdiger
Published in e-Prime (01.06.2023)
Published in e-Prime (01.06.2023)
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Journal Article