256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers
Kang, Dongku, Jeong, Woopyo, Kim, Chulbum, Kim, Doo-Hyun, Cho, Yong Sung, Kang, Kyung-Tae, Ryu, Jinho, Kang, Kyung-Min, Lee, SungYeon, Kim, Wandong, Lee, Hanjun, Yu, Jaedoeg, Choi, Nayoung, Jang, Dong-Su, Lee, Cheon An, Min, Young-Sun, Kim, Moo-Sung, Park, An-Soo, Son, Jae-Ick, Kim, In-Mo, Kwak, Pansuk, Jung, Bong-Kil, Lee, Doo-Sub, Kim, Hyunggon, Ihm, Jeong-Don, Byeon, Dae-Seok, Lee, Jin-Yup, Park, Ki-Tae, Kyung, Kye-Hyun
Published in IEEE journal of solid-state circuits (01.01.2017)
Published in IEEE journal of solid-state circuits (01.01.2017)
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Journal Article
A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate
Jeong, Woopyo, Im, Jae-woo, Kim, Doo-Hyun, Nam, Sang-Wan, Shim, Dong-Kyo, Choi, Myung-Hoon, Yoon, Hyun-Jun, Kim, Dae-Han, Kim, You-Se, Park, Hyun-Wook, Kwak, Dong-Hun, Park, Sang-Won, Yoon, Seok-Min, Hahn, Wook-Ghee, Ryu, Jin-Ho, Shim, Sang-Won, Kang, Kyung-Tae, Ihm, Jeong-Don, Kim, In-Mo, Lee, Doo-Sub, Cho, Ji-Ho, Kim, Moo-Sung, Jang, Jae-Hoon, Hwang, Sang-Won, Byeon, Dae-Seok, Yang, Hyang-Ja, Park, Kitae, Kyung, Kye-Hyun, Choi, Jeong-Hyuk
Published in IEEE journal of solid-state circuits (01.01.2016)
Published in IEEE journal of solid-state circuits (01.01.2016)
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Journal Article
7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate
Im, Jae-Woo, Jeong, Woo-Pyo, Kim, Doo-Hyun, Nam, Sang-Wan, Shim, Dong-Kyo, Choi, Myung-Hoon, Yoon, Hyun-Jun, Kim, Dae-Han, Kim, You-Se, Park, Hyun-Wook, Kwak, Dong-Hun, Park, Sang-Won, Yoon, Seok-Min, Hahn, Wook-Ghee, Ryu, Jin-Ho, Shim, Sang-Won, Kang, Kyung-Tae, Choi, Sung-Ho, Ihm, Jeong-Don, Min, Young-Sun, Kim, In-Mo, Lee, Doo-Sub, Cho, Ji-Ho, Kwon, Oh-Suk, Lee, Ji-Sang, Kim, Moo-Sung, Joo, Sang-Hyun, Jang, Jae-Hoon, Hwang, Sang-Won, Byeon, Dae-Seok, Yang, Hyang-Ja, Park, Ki-Tae, Kyung, Kye-Hyun, Choi, Jeong-Hyuk
Published in 2015 IEEE International Solid State Circuits Conference (ISSCC) (01.02.2015)
Published in 2015 IEEE International Solid State Circuits Conference (ISSCC) (01.02.2015)
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Conference Proceeding
Journal Article
7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers
Dongku Kang, Woopyo Jeong, Chulbum Kim, Doo-Hyun Kim, Yong Sung Cho, Kyung-Tae Kang, Jinho Ryu, Kyung-Min Kang, Sungyeon Lee, Wandong Kim, Hanjun Lee, Jaedoeg Yu, Nayoung Choi, Dong-Su Jang, Jeong-Don Ihm, Doogon Kim, Young-Sun Min, Moo-Sung Kim, An-Soo Park, Jae-Ick Son, In-Mo Kim, Pansuk Kwak, Bong-Kil Jung, Doo-Sub Lee, Hyunggon Kim, Hyang-Ja Yang, Dae-Seok Byeon, Ki-Tae Park, Kye-Hyun Kyung, Jeong-Hyuk Choi
Published in 2016 IEEE International Solid-State Circuits Conference (ISSCC) (01.01.2016)
Published in 2016 IEEE International Solid-State Circuits Conference (ISSCC) (01.01.2016)
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Conference Proceeding