Experimental and modelling study of InGaBiAs InP alloys with up to 5.8% Bi, and with Δso > Eg
Chai, Grace M T, Broderick, C A, O'Reilly, E P, Othaman, Z, Jin, S R, Petropoulos, J P, Zhong, Y, Dongmo, P B, Zide, J M O, Sweeney, S J, Hosea, T J C
Published in Semiconductor science and technology (01.09.2015)
Published in Semiconductor science and technology (01.09.2015)
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Journal Article
Degenerately doped InGaBiAs:Si as a highly conductive and transparent contact material in the infrared range
Zhong, Y., Dongmo, P. B., Gong, L., Law, S., Chase, B., Wasserman, D., Zide, J. M. O.
Published in Optical materials express (01.08.2013)
Published in Optical materials express (01.08.2013)
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Journal Article
Experimental and modelling study of InGaBiAs/InP alloys with up to 5.8% Bi, and with Δ so > E g
Chai, Grace M T, Broderick, C A, O’Reilly, E P, Othaman, Z, Jin, S R, Petropoulos, J P, Zhong, Y, Dongmo, P B, Zide, J M O, Sweeney, S J, Hosea, T J C
Published in Semiconductor science and technology (01.09.2015)
Published in Semiconductor science and technology (01.09.2015)
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Journal Article
InGaBiAs/InP semiconductors for mid-infrared applications: Dependence of bandgap and spin-orbit splitting on temperature and bismuth content
Hosea, T. J. C., Marko, I. P., Batool, Z., Hild, K., Jin, S. R., Hossain, N., Chai, G. M. T., Sweeney, S. J., Petropoulos, J. P., Zhong, Y., Dongmo, P. B., Zide, J. M. O.
Published in 2012 IEEE 3rd International Conference on Photonics (01.10.2012)
Published in 2012 IEEE 3rd International Conference on Photonics (01.10.2012)
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Conference Proceeding