Comparative Study on Temperature‐Dependent Internal Quantum Efficiency and Light–Extraction Efficiency in III‐Nitride–, III‐Phosphide–, and III‐Arsenide–based Light‐Emitting Diodes
Park, Jaehyeok, Shin, Seokjun, Zheng, Dong‐Guang, Kim, Kyu Sang, Han, Dong‐Pyo
Published in Physica status solidi. A, Applications and materials science (01.07.2024)
Published in Physica status solidi. A, Applications and materials science (01.07.2024)
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Journal Article
Effect of AlGaN undershell on the cathodoluminescence properties of coaxial GaInN/GaN multiple-quantum-shells nanowires
Lu, Weifang, Sone, Naoki, Goto, Nanami, Iida, Kazuyoshi, Suzuki, Atsushi, Han, Dong-Pyo, Iwaya, Motoaki, Tekeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
Published in Nanoscale (28.10.2019)
Published in Nanoscale (28.10.2019)
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Journal Article
Space–Charge‐Limited Photocurrent as a Possible Cause for Low Power Conversion Efficiency in GaInN/GaN‐Based Optoelectronic Semiconductors
Kim, Jiwon, Park, Changeun, Shin, Dong‐Soo, Shim, Jong‐In, Zheng, Dong‐Guang, Han, Dong‐Pyo
Published in Physica status solidi. A, Applications and materials science (14.03.2024)
Published in Physica status solidi. A, Applications and materials science (14.03.2024)
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Journal Article
Modified Shockley Equation for GaInN-Based Light-Emitting Diodes: Origin of the Power- Efficiency Degradation Under High Current Injection
Dong-Pyo Han, Dong-Soo Shin, Jong-In Shim, Kamiyama, Satoshi, Takeuchi, Tetsuya, Iwaya, Motoaki, Akasaki, Isamu
Published in IEEE journal of quantum electronics (01.08.2019)
Published in IEEE journal of quantum electronics (01.08.2019)
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Journal Article
Efficiency Enhancement Mechanism of an Underlying Layer in GaInN‐Based Green Light–Emitting Diodes
Han, Dong-Pyo, Ishimoto, Seiji, Mano, Ryoya, Lu, Weifang, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
Published in Physica status solidi. A, Applications and materials science (01.04.2020)
Published in Physica status solidi. A, Applications and materials science (01.04.2020)
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Journal Article
Improved Uniform Current Injection into Core‐Shell‐Type GaInN Nanowire Light‐Emitting Diodes by Optimizing Growth Condition and Indium‐Tin‐Oxide Deposition
Sone, Naoki, Suzuki, Atsushi, Murakami, Hideki, Goto, Nanami, Terazawa, Mizuki, Lu, Weifang, Han, Dong-Pyo, Iida, Kazuyoshi, Ohya, Masaki, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
Published in Physica status solidi. A, Applications and materials science (01.04.2020)
Published in Physica status solidi. A, Applications and materials science (01.04.2020)
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Journal Article
Improved Reverse Leakage Current in GaInN-Based LEDs With a Sputtered AlN Buffer Layer
Han, Dong-Pyo, Ishimoto, Seiji, Mano, Ryoya, Lu, Weifang, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
Published in IEEE photonics technology letters (15.12.2019)
Published in IEEE photonics technology letters (15.12.2019)
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Journal Article
Determination of internal quantum efficiency in GaInN-based light-emitting diode under electrical injection: carrier recombination dynamics analysis
Han, Dong-Pyo, Yamamoto, Kengo, Ishimoto, Seiji, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
Published in Applied physics express (01.03.2019)
Published in Applied physics express (01.03.2019)
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Journal Article
Identifying the cause of thermal droop in GaInN-based LEDs by carrier- and thermo-dynamics analysis
Han, Dong-Pyo, Lee, Gyeong Won, Min, Sangjin, Shin, Dong-Soo, Shim, Jong-In, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
Published in Scientific reports (15.10.2020)
Published in Scientific reports (15.10.2020)
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Journal Article
Factors Determining the Carrier Distribution in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes
Han, Dong-Pyo, Shim, Jong-In, Shin, Dong-Soo
Published in IEEE journal of quantum electronics (01.02.2018)
Published in IEEE journal of quantum electronics (01.02.2018)
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Journal Article
Role of surface defects in the efficiency degradation of GaInN-based green LEDs
Han, Dong-Pyo, Ishimoto, Seiji, Mano, Ryoya, Lu, Weifang, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
Published in Applied physics express (01.01.2020)
Published in Applied physics express (01.01.2020)
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Journal Article
Conduction Mechanisms of Leakage Currents in InGaN/GaN-Based Light-Emitting Diodes
Dong-Pyo Han, Chan-Hyoung Oh, Hyunsung Kim, Jong-In Shim, Kyu-Sang Kim, Dong-Soo Shin
Published in IEEE transactions on electron devices (01.02.2015)
Published in IEEE transactions on electron devices (01.02.2015)
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Journal Article
Analysis of impurity doping in tunnel junction grown on core–shell structure composed of GaInN/GaN multiple-quantum-shells and GaN nanowire
Sone, Naoki, Jinno, Daiki, Miyamoto, Yoshiya, Okuda, Renji, Yamamura, Shiori, Jinno, Yukimi, Lu, Weifang, Han, Dong-Pyo, Okuno, Koji, Mizutani, Koichi, Nakajima, Satoru, Koyama, Jun, Ishimura, Satoshi, Mayama, Norihito, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
Published in Japanese Journal of Applied Physics (01.01.2022)
Published in Japanese Journal of Applied Physics (01.01.2022)
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Journal Article
Suppression of (0001) plane emission in GaInN/GaN multi-quantum nanowires for efficient micro-LEDs
Katsuro, Sae, Lu, Weifang, Ito, Kazuma, Nakayama, Nanami, Yamamura, Shiori, Jinno, Yukimi, Inaba, Soma, Shima, Ayaka, Sone, Naoki, Han, Dong-Pyo, Huang, Kai, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi
Published in Nanophotonics (Berlin, Germany) (01.12.2022)
Published in Nanophotonics (Berlin, Germany) (01.12.2022)
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Journal Article
Forward-Capacitance Measurement on Wide-Bandgap Light-Emitting Diodes
Han, Dong-Pyo, Kim, Young-Jin, Shim, Jong-In, Shin, Dong-Soo
Published in IEEE photonics technology letters (01.11.2016)
Published in IEEE photonics technology letters (01.11.2016)
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Journal Article