An electrically modifiable synapse array of resistive switching memory
Choi, Hyejung, Jung, Heesoo, Lee, Joonmyoung, Yoon, Jaesik, Park, Jubong, Seong, Dong-jun, Lee, Wootae, Hasan, Musarrat, Jung, Gun-Young, Hwang, Hyunsang
Published in Nanotechnology (26.08.2009)
Published in Nanotechnology (26.08.2009)
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Journal Article
Investigation of State Stability of Low-Resistance State in Resistive Memory
Jubong Park, Minseok Jo, Bourim, El Mostafa, Jaesik Yoon, Dong-Jun Seong, Joonmyoung Lee, Wootae Lee, Hyunsang Hwang
Published in IEEE electron device letters (01.05.2010)
Published in IEEE electron device letters (01.05.2010)
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Journal Article
Materials and process aspect of cross-point RRAM (invited)
Lee, Joonmyoung, Jo, Minseok, Seong, Dong-jun, Shin, Jungho, Hwang, Hyunsang
Published in Microelectronic engineering (01.07.2011)
Published in Microelectronic engineering (01.07.2011)
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Journal Article
Conference Proceeding
Nanoscale Resistive Switching of a Copper-Carbon-Mixed Layer for Nonvolatile Memory Applications
Hyejung Choi, Myeongbum Pyun, Tae-Wook Kim, Hasan, M., Rui Dong, Joonmyoung Lee, Ju-Bong Park, Jaesik Yoon, Dong-jun Seong, Takhee Lee, Hyunsang Hwang
Published in IEEE electron device letters (01.03.2009)
Published in IEEE electron device letters (01.03.2009)
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Journal Article
Analysis of copper ion filaments and retention of dual-layered devices for resistance random access memory applications
Yoon, Jaesik, Lee, Joonmyoung, Choi, Hyejung, Park, Ju-Bong, Seong, Dong-jun, Lee, Wootae, Cho, Chunhum, Kim, Seonghyun, Hwang, Hyunsang
Published in Microelectronic engineering (01.07.2009)
Published in Microelectronic engineering (01.07.2009)
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Journal Article
Conference Proceeding
Novel cross-point resistive switching memory with self-formed schottky barrier
Minseok Jo, Dong-jun Seong, Seonghyun Kim, Joonmyoung Lee, Wootae Lee, Ju-Bong Park, Sangsoo Park, Seungjae Jung, Jungho Shin, Daeseok Lee, Hyunsang Hwang
Published in 2010 Symposium on VLSI Technology (01.06.2010)
Published in 2010 Symposium on VLSI Technology (01.06.2010)
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Conference Proceeding
Characteristics of Traps Induced by Hot Holes Under Negative-Bias Temperature Stress in a pMOSFET
JO, Minseok, CHANG, Man, KIM, Seonghyun, JUNG, Seungjae, PARK, Ju-Bong, LEE, Joonmyoung, SEONG, Dong-Jun, HWANG, Hyunsang
Published in IEEE electron device letters (01.11.2009)
Published in IEEE electron device letters (01.11.2009)
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Journal Article
A non-linear ReRAM cell with sub-1μA ultralow operating current for high density vertical resistive memory (VRRAM)
Seong-Geon Park, Min Kyu Yang, Hyunsu Ju, Dong-Jun Seong, Jung Moo Lee, Eunmi Kim, Seungjae Jung, Lijie Zhang, Yoo Cheol Shin, In-Gyu Baek, Jungdal Choi, Ho-Kyu Kang, Chilhee Chung
Published in 2012 International Electron Devices Meeting (01.12.2012)
Published in 2012 International Electron Devices Meeting (01.12.2012)
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Conference Proceeding
The impact of Al interfacial layer on resistive switching of La0.7Sr0.3MnO3 for reliable ReRAM applications
Lee, Joonmyoung, Choi, Hyejung, Seong, Dong-jun, Yoon, Jaesik, Park, Jubong, Jung, Seungjae, Lee, Wootae, Chang, Man, Cho, Chunhum, Hwang, Hyunsang
Published in Microelectronic engineering (01.07.2009)
Published in Microelectronic engineering (01.07.2009)
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Journal Article
Analysis of interface switching for Nb doped SrTiO3 single crystal device using complex impedance spectroscopy
Lee, Joonmyoung, Bourim, El Mostafa, Shin, Dongku, Lee, Jong-Sook, Seong, Dong-jun, Park, Jubong, Lee, Wootae, Chang, Man, Jung, Seungjae, Shin, Jungho, Hwang, Hyunsang
Published in Current applied physics (01.01.2010)
Published in Current applied physics (01.01.2010)
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Journal Article
Highly reliable ReRAM technology with encapsulation process for 20nm and beyond
Dong-Jun Seong, Min Kyu Yang, Hyunsu Ju, Jung Moo Lee, Eunmi Kim, Seungjae Jung, Jinwoo Lee, Gun Hwan Kim, Seol Choi, Lijie Zhang, Seong-Geon Park, Youn Seon Kang, In-Gyu Baek, Jungdal Choi, Ho-Kyu Kang, Eunseung Jung
Published in 2013 5th IEEE International Memory Workshop (01.05.2013)
Published in 2013 5th IEEE International Memory Workshop (01.05.2013)
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Conference Proceeding
Excellent Switching Uniformity of Cu-Doped MoOx/GdOx Bilayer for Nonvolatile Memory Applications
YOON, Jaesik, CHOI, Hyejung, LEE, Dongsoo, PARK, Ju-Bong, LEE, Joonmyoung, SEONG, Dong-Jun, JU, Yongkyu, CHANG, Man, JUNG, Seungjae, HWANG, Hyunsang
Published in IEEE electron device letters (01.05.2009)
Published in IEEE electron device letters (01.05.2009)
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Journal Article
Resistive-Switching Characteristics of Al/Pr0.7Ca0.3MnO3 for Nonvolatile Memory Applications
SEONG, Dong-Jun, HASSAN, Musarrat, CHOI, Hyejung, LEE, Joonmyoung, YOON, Jaesik, PARK, Ju-Bong, LEE, Wootae, OH, Min-Suk, HWANG, Hyunsang
Published in IEEE electron device letters (01.09.2009)
Published in IEEE electron device letters (01.09.2009)
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Journal Article
Excellent uniformity and reproducible resistance switching characteristics of doped binary metal oxides for non-volatile resistance memory applications
Dongsoo Lee, Dong-jun Seong, Hye jung Choi, Inhwa Jo, Dong, R., Xiang, W., Seokjoon Oh, Myeongbum Pyun, Sun-ok Seo, Seongho Heo, Minseok Jo, Dae-Kyu Hwang, Park, H.K., Chang, M., Hasan, M., Hyunsang Hwang
Published in 2006 International Electron Devices Meeting (01.12.2006)
Published in 2006 International Electron Devices Meeting (01.12.2006)
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Conference Proceeding
Resistance switching of Al doped ZnO for Non Volatile Memory applications
Dongsoo Lee, Dae-Kue Hwang, Man Chang, Yunik Son, Dong-jun Seong, Dooho Choi, Hyunsang Hwang
Published in 2006 21st IEEE Non-Volatile Semiconductor Memory Workshop (2006)
Published in 2006 21st IEEE Non-Volatile Semiconductor Memory Workshop (2006)
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Conference Proceeding
Resistive-Switching Characteristics of [Formula Omitted] for Nonvolatile Memory Applications
Seong, Dong-Jun, Hassan, M, Choi, Hyejung, Lee, Joonmyoung, Yoon, Jaesik, Park, Ju-Bong, Lee, Wootae, Oh, Min-Suk, Hwang, Hyunsang
Published in IEEE electron device letters (01.09.2009)
Published in IEEE electron device letters (01.09.2009)
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Journal Article
Resistive-Switching Characteristics ofhbox{Al}/ hbox{Pr}_{0.7}hbox{Ca}_{0.3}hbox{MnO}_{3} for Nonvolatile Memory Applications
Lee, Wootae, Seong, Dong-Jun, Lee, Joonmyoung, Hassan, M, Yoon, Jaesik, Choi, Hyejung, Park, Ju-Bong, Oh, Min-Suk, Hwang, Hyunsang
Published in IEEE electron device letters (01.09.2009)
Published in IEEE electron device letters (01.09.2009)
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Journal Article