Search Results - "Dong Yingda" :: K.UTB vyhledávací portál

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Non-volatile memory with customized control of injection type of disturb during program verify for improved program performance

by Dong, Yingda, Chen, Hong-Yan
Year of Publication 17.07.2018

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Patent

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ELECTRIC FIELD TO REDUCE SELECT GATE THRESHOLD VOLTAGE SHIFT

by DONG, Yingda, LU, Ching-Huang
Year of Publication 11.03.2020

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Patent

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SELECTIVE INCREASE AND DECREASE TO PASS VOLTAGES FOR PROGRAMMING A MEMORY DEVICE

by Tsai, Jeffrey Ming-Hung, Lu, Ching-Huang, Dong, Yingda, Diep, Vinh Quang
Year of Publication 24.08.2023

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Patent

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THREE DIMENSIONAL FERROELECTRIC MEMORY

by Dong, Yingda, Kai, James, Petti, Christopher J
Year of Publication 05.03.2020

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Patent

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DOPING CHANNELS OF EDGE CELLS TO PROVIDE UNIFORM PROGRAMMING SPEED AND REDUCE READ DISTURB

by DONG, Yingda, YU, Xuehong
Year of Publication 19.02.2020

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Patent

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Three-dimensional flat inverse NAND memory device and method of making the same

by Dong, Yingda, Chen, Yangyin, Kai, James
Year of Publication 11.02.2020

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Patent

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Selective removal of charge-trapping layer for select gate transistors and dummy memory cells in 3D stacked memory

by Dong Yingda, Pang Liang
Year of Publication 02.08.2016

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Patent

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A 183 GHz f sub(T) and 165 GHz f sub(max) regrown-emitter DHBT with abrupt InP emitter

by Scott, D W, Wei, Yun, Dong, Yingda, Gossard, A C, Rodwell, MJ
Published in IEEE electron device letters (01.01.2004)

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Journal Article

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A 160-GHz f sub(T) and 140-GHz f sub(MAX) submicrometer InP DHBT in MBE regrown-emitter technology

by Wei, Yun, Scott, D W, Dong, Yingda, Gossard, A C, Rodwell, MJ
Published in IEEE electron device letters (01.01.2004)

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Journal Article

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FERROELECTRIC NON-VOLATILE MEMORY

by Sakotsubo, Yukihiro, Dong, Yingda, Chen, Yangyin
Year of Publication 16.01.2020

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Patent

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THREE-DIMENSIONAL INVERSE FLAT NAND MEMORY DEVICE CONTAINING PARTIALLY DISCRETE CHARGE STORAGE ELEMENTS AND METHODS OF MAKING THE SAME

by DONG, Yingda, ZHOU, Fei, MAKALA, Raghuveer S
Year of Publication 02.01.2020

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Patent

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THREE-DIMENSIONAL INVERSE FLAT NAND MEMORY DEVICE CONTAINING PARTIALLY DISCRETE CHARGE STORAGE ELEMENTS AND METHODS OF MAKING THE SAME

by Zhou, Fei, Dong, Yingda, Makala, Raghuveer S
Year of Publication 02.01.2020

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Patent

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Reduced erase-verify voltage for first-programmed word line in a memory device

by SUN YONGKE, DONG YINGDA
Year of Publication 17.05.2016

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Patent

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Reprogramming memory with single program pulse per data state

by DONG YINGDA, PANG LIANG
Year of Publication 17.05.2016

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Patent

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Avoiding unintentional program or erase of a select gate transistor

by DONG YINGDA, PANG LIANG
Year of Publication 17.05.2016

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Patent

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Reducing hot electron injection type of read disturb in 3D non-volatile memory for edge word lines

by Dong Yingda, Chen Hong-Yan
Year of Publication 27.02.2018

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Patent

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SUPPRESSING DISTURB OF SELECT GATE TRANSISTORS DURING ERASE IN MEMORY

by DONG, Yingda, PANG, Liang, ZHANG, Zhengyi
Year of Publication 20.11.2019

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Patent

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Multiple pass programming for memory with different program pulse widths

by DONG YINGDA, PANG LIANG
Year of Publication 26.04.2016

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Patent

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Ferroelectric non-volatile memory

by Sakotsubo, Yukihiro, Dong, Yingda, Chen, Yangyin
Year of Publication 29.10.2019

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Patent

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PROGRAMMING OF DUMMY MEMORY CELL TO REDUCE CHARGE LOSS IN SELECT GATE TRANSISTOR

by DONG, Yingda, LU, Ching-Huang, DIEP, Vinh
Year of Publication 21.07.2021

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Patent

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