Delay Analysis of Graphene Field-Effect Transistors
Han Wang, Hsu, Allen, Dong Seup Lee, Ki Kang Kim, Jing Kong, Palacios, Tomas
Published in IEEE electron device letters (01.03.2012)
Published in IEEE electron device letters (01.03.2012)
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Journal Article
300-GHz InAlN/GaN HEMTs With InGaN Back Barrier
Dong Seup Lee, Xiang Gao, Shiping Guo, Kopp, D., Fay, P., Palacios, T.
Published in IEEE electron device letters (01.11.2011)
Published in IEEE electron device letters (01.11.2011)
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Journal Article
Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs
Lee, Ethan S., Joh, Jungwoo, Lee, Dong Seup, del Alamo, Jesús A.
Published in Applied physics letters (21.02.2022)
Published in Applied physics letters (21.02.2022)
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Journal Article
GaN high electron mobility transistors for sub-millimeter wave applications
Lee, Dong Seup, Liu, Zhihong, Palacios, Tomás
Published in Japanese Journal of Applied Physics (01.10.2014)
Published in Japanese Journal of Applied Physics (01.10.2014)
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Journal Article
InAlN/GaN HEMTs With AlGaN Back Barriers
Dong Seup Lee, Xiang Gao, Shiping Guo, Palacios, T
Published in IEEE electron device letters (01.05.2011)
Published in IEEE electron device letters (01.05.2011)
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Journal Article
Product-level reliability of GaN devices
Bahl, Sandeep R., Ruiz, Daniel, Dong Seup Lee
Published in 2016 IEEE International Reliability Physics Symposium (IRPS) (01.04.2016)
Published in 2016 IEEE International Reliability Physics Symposium (IRPS) (01.04.2016)
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Conference Proceeding
245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment
Dong Seup Lee, Chung, Jinwook W, Han Wang, Xiang Gao, Shiping Guo, Fay, Patrick, Palacios, Tomás
Published in IEEE electron device letters (01.06.2011)
Published in IEEE electron device letters (01.06.2011)
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Journal Article
Nanowire Channel InAlN/GaN HEMTs With High Linearity of gm and fT
DONG SEUP LEE, HAN WANG, SAUNIER, Paul, PALACIOS, Tomás, ALLEN HSU, AZIZE, Mohamed, LABOUTIN, Oleg, YU CAO, JOHNSON, Jerry Wayne, BEAM, Edward, KETTERSON, Andrew, SCHUETTE, Michael L
Published in IEEE electron device letters (21.06.2013)
Published in IEEE electron device letters (21.06.2013)
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Journal Article
Impact of Al2O3 Passivation Thickness in Highly Scaled GaN HEMTs
DONG SEUP LEE, LABOUTIN, Oleg, YU CAO, JOHNSON, Wayne, BEAM, Edward, KETTERSON, Andrew, SAUNIER, Paul, PALACIOS, Tomás
Published in IEEE electron device letters (01.07.2012)
Published in IEEE electron device letters (01.07.2012)
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Journal Article
Device Delay in GaN Transistors Under High Drain Bias Conditions
Lee, Dong Seup, Laboutin, Oleg, Cao, Yu, Johnson, Jerry Wayne, Beam, Edward, Ketterson, Andrew, Schuette, Michael L., Saunier, Paul, Palacios, Tomas
Published in IEEE electron device letters (01.07.2013)
Published in IEEE electron device letters (01.07.2013)
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Journal Article
Physics-based GaN HEMT transport and charge model: Experimental verification and performance projection
Radhakrishna, Ujwal, Lan Wei, Dong-Seup Lee, Palacios, T., Antoniadis, D.
Published in 2012 International Electron Devices Meeting (01.12.2012)
Published in 2012 International Electron Devices Meeting (01.12.2012)
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Conference Proceeding
Impact of \hbox\hbox Passivation Thickness in Highly Scaled GaN HEMTs
Dong Seup Lee, Laboutin, O., Yu Cao, Johnson, W., Beam, E., Ketterson, A., Schuette, M., Saunier, P., Palacios, T.
Published in IEEE electron device letters (01.07.2012)
Published in IEEE electron device letters (01.07.2012)
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Journal Article
High linearity nanowire channel GaN HEMTs
Dong Seup Lee, Han Wang, Hsu, Allen, Azize, Mohamed, Laboutin, Oleg, Yu Cao, Johnson, Wayne, Beam, Edward, Ketterson, Andrew, Schuette, Michael, Saunier, Paul, Palacios, Tomas
Published in 71st Device Research Conference (01.06.2013)
Published in 71st Device Research Conference (01.06.2013)
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Conference Proceeding
Fabrication and Characteristics of Self-Aligned Dual-Gate Single-Electron Transistors
DONG SEUP LEE, KANG, Sangwoo, KANG, Kwon-Chil, LEE, Joung-Eob, JUNG HOON LEE, SONG, Kwan-Jae, DONG MYONG KIM, JONG DUK LEE, PARK, Byung-Gook
Published in IEEE transactions on nanotechnology (01.07.2009)
Published in IEEE transactions on nanotechnology (01.07.2009)
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Journal Article
Silicon-Based Dual-Gate Single-Electron Transistors for Logic Applications
Lee, Dong Seup, Yang, Hong-Seon, Kang, Kwon-Chil, Lee, Joung-Eob, Lee, Jung Han, Park, Sang Hyuk, Park, Byung-Gook
Published in Japanese Journal of Applied Physics (01.07.2009)
Published in Japanese Journal of Applied Physics (01.07.2009)
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Journal Article
Nanowire Channel InAlN/GaN HEMTs With High Linearity of g and f
Lee, Dong Seup, Wang, Han, Hsu, Allen, Azize, Mohamed, Laboutin, Oleg, Cao, Yu, Johnson, Jerry Wayne, Beam, Edward, Ketterson, Andrew, Schuette, Michael L., Saunier, Paul, Palacios, Tomas
Published in IEEE electron device letters (01.08.2013)
Published in IEEE electron device letters (01.08.2013)
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Journal Article
Impact of Gate Offset on PBTI of p-GaN Gate HEMTs
Lee, Ethan S., Joh, Jungwoo, Lee, Dong Seup, del Alamo, Jesus A.
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01.03.2022)
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01.03.2022)
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Conference Proceeding
Characterization of oxide traps leading to RTN in high-k and metal gate MOSFETs
Sanghoon Lee, Heung-Jae Cho, Younghwan Son, Dong Seup Lee, Hyungcheol Shin
Published in 2009 IEEE International Electron Devices Meeting (IEDM) (01.12.2009)
Published in 2009 IEEE International Electron Devices Meeting (IEDM) (01.12.2009)
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Conference Proceeding
Impact of self-heating effect in hot carrier injection modeling
Lee, Dong Seup, Varghese, Dhanoop, Sonnet, Arif, Joh, Jungwoo, Venugopal, Archana, Krishnan, Srikanth
Published in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2018)
Published in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2018)
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Conference Proceeding