Rare earth doped NaYF4 nanorods: Synthesis and up-conversion luminescence spanning deep-ultraviolet to near-infrared regions
Zhang, Y.Y., Wang, B.T., Peng, J., Wang, X.B., Pang, J., Dong, K.X.
Published in Optical materials (01.02.2015)
Published in Optical materials (01.02.2015)
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Characteristics of deep ultraviolet AlGaN-based light emitting diodes with p-hBN layer
Dong, K.X., Chen, D.J., Shi, J.P., Liu, B., Lu, H., Zhang, R., Zheng, Y.D.
Published in Physica. E, Low-dimensional systems & nanostructures (01.01.2016)
Published in Physica. E, Low-dimensional systems & nanostructures (01.01.2016)
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Design of deep ultraviolet light-emitting diodes with staggered AlGaN quantum wells
Yang, G.F., Xie, F., Dong, K.X., Chen, P., Xue, J.J., Zhi, T., Tao, T., Liu, B., Xie, Z.L., Xiu, X.Q., Han, P., Shi, Y., Zhang, R., Zheng, Y.D.
Published in Physica. E, Low-dimensional systems & nanostructures (01.08.2014)
Published in Physica. E, Low-dimensional systems & nanostructures (01.08.2014)
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Theoretical study of N-face InGaN light-emitting diodes with GaN–InGaN–GaN barrier near p-side and n-side
Yang, G.F., Dong, K.X., Zhu, H.X., Guo, Y., Yan, D.W., Wang, F.X., Li, G.H., Gao, S.M.
Published in Superlattices and microstructures (01.01.2014)
Published in Superlattices and microstructures (01.01.2014)
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