A simple and high-performance 130 nm SOI eDRAM technology using floating-body pass-gate transistor in trench-capacitor cell for system-on-a-chip (SoC) applications
Kumar, M., Steigerwalt, M.D., Walsh, B.L., Doney, T.L., Wildrick, D., Bard, K.A., Dobuzinsky, D.M., McFarland, P.A., Schiller, C.E., Messenger, B., Rathmill, S.E., Gasasira, A.R., Parries, P.C., Iyer, S.S., Chaloux, S.E., Ho, H.L.
Published in IEEE International Electron Devices Meeting 2003 (2003)
Published in IEEE International Electron Devices Meeting 2003 (2003)
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A 0.13 /spl mu/m high-performance SOI logic technology with embedded DRAM for system-on-a-chip application
Ho, H.L., Steigerwalt, M.D., Walsh, B.L., Doney, T.L., Wildrick, D., McFarland, P.A., Benedict, J., Bard, K.A., Pendleton, D., Lee, J.D., Maurer, S.L., Corrow, B., Sadana, D.K.
Published in International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) (2001)
Published in International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) (2001)
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