Non-monotonic threshold voltage variation in 4H-SiC metal–oxide–semiconductor field-effect transistor: Investigation and modeling
Masin, F., De Santi, C., Lettens, J., Franchi, J., Domeij, M., Moens, P., Meneghini, M., Meneghesso, G., Zanoni, E.
Published in Journal of applied physics (14.10.2021)
Published in Journal of applied physics (14.10.2021)
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Journal Article
A Charge-to-Breakdown (QBD) Approach to SiC Gate Oxide Lifetime Extraction and Modeling
Moens, P., Franchi, J., Lettens, J., Schepper, L. De, Domeij, M., Allerstam, F.
Published in 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.09.2020)
Published in 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.09.2020)
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Conference Proceeding
Is there a perfect SiC MosFETs Device on an imperfect crystal?
Neyer, T., Domeij, M., Das, H., Sunkari, S.
Published in 2021 IEEE International Reliability Physics Symposium (IRPS) (01.03.2021)
Published in 2021 IEEE International Reliability Physics Symposium (IRPS) (01.03.2021)
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Conference Proceeding
High-Voltage 4H-SiC PiN Diodes With Etched Junction Termination Extension
Ghandi, R., Buono, B., Domeij, M., Malm, G., Zetterling, C.-M., Ostling, M.
Published in IEEE electron device letters (01.11.2009)
Published in IEEE electron device letters (01.11.2009)
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Journal Article
Geometrical effects in high current gain 1100-V 4H-SiC BJTs
Domeij, M., Lee, H.-S., Danielsson, E., Zetterling, C.-M., Ostling, M., Schoner, A.
Published in IEEE electron device letters (01.10.2005)
Published in IEEE electron device letters (01.10.2005)
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Journal Article
Removal of Crystal Orientation Effects on the Current Gain of 4H-SiC BJTs Using Surface Passivation
Ghandi, R, Buono, B, Zetterling, C.-M, Domeij, M, Shayestehaminzadeh, S, Östling, M
Published in IEEE electron device letters (01.05.2011)
Published in IEEE electron device letters (01.05.2011)
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Journal Article
Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001)
Buchholt, K., Eklund, P., Jensen, J., Lu, J., Ghandi, R., Domeij, M., Zetterling, C.M., Behan, G., Zhang, H., Lloyd Spetz, A., Hultman, L.
Published in Journal of crystal growth (15.03.2012)
Published in Journal of crystal growth (15.03.2012)
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Journal Article
Low-Forward-Voltage-Drop 4H-SiC BJTs Without Base Contact Implantation
Hyung-Seok Lee, Domeij, M., Zetterling, C.-M., Ostling, M.
Published in IEEE transactions on electron devices (01.08.2008)
Published in IEEE transactions on electron devices (01.08.2008)
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Journal Article
Influence of crystal orientation on the current gain in 4H-SiC BJTs
Ghandi, R, Bouno, B, Domeij, M, Shayestehaminzadeh, S, Zetterling, C.-M, Östling, M
Published in 68th Device Research Conference (01.06.2010)
Published in 68th Device Research Conference (01.06.2010)
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Conference Proceeding
Dynamic avalanche in 3.3-kV Si power diodes
Domeij, M., Breitholtz, B., Hillkirk, L.M., Linnros, J., Ostling, M.
Published in IEEE transactions on electron devices (01.04.1999)
Published in IEEE transactions on electron devices (01.04.1999)
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Journal Article
Investigation of thermal properties in fabricated 4H-SiC high power bipolar transistors
Danielsson, E., Zetterling, C.-M., Domeij, M., Östling, M., Forsberg, U., Janzén, E.
Published in Solid-state electronics (01.04.2003)
Published in Solid-state electronics (01.04.2003)
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Journal Article
The Concept of Safe Operating Area for Gate Dielectrics: the SiC/SiO2 Case Study
Moens, P., Geenen, F., De Schepper, L., Cano, JF, Lettens, J., Maslougkas, S., Franchi, J., Domeij, M.
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
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Conference Proceeding
Time Resolved Gate Oxide Stress of 4H-SiC Planar MOSFETs and NMOS Capacitors
Domeij, Martin, Allerstam, Fredrik, Buono, Benedetto, Gumaelius, Krister
Published in Materials Science Forum (24.05.2016)
Published in Materials Science Forum (24.05.2016)
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Journal Article
Analysis of interface trap density and channel mobility in 4H-SiC NMOS capacitors and lateral MOSFETs
Domeij, M., Franchi, J., Gumaelius, K., Lee, K., Allerstam, F.
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
Published in 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) (15.05.2017)
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Conference Proceeding
Journal Article
TCAD Modeling of a 1200 V SiC MOSFET
Domeij, Martin, Lee, Kwangwon, Buono, Benedetto, Franchi, Jimmy
Published in Materials science forum (05.06.2018)
Published in Materials science forum (05.06.2018)
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Journal Article
High-Voltage (2.8 kV) Implantation-Free 4H-SiC BJTs With Long-Term Stability of the Current Gain
Ghandi, R., Buono, B., Domeij, M., Zetterling, C., Ostling, M.
Published in IEEE transactions on electron devices (01.08.2011)
Published in IEEE transactions on electron devices (01.08.2011)
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Journal Article
Surface-Passivation Effects on the Performance of 4H-SiC BJTs
Ghandi, R, Buono, B, Domeij, M, Esteve, R, Schöner, A, Jisheng Han, Dimitrijev, S, Reshanov, S A, Zetterling, C-M, Östling, M
Published in IEEE transactions on electron devices (01.01.2011)
Published in IEEE transactions on electron devices (01.01.2011)
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Journal Article
Modeling and Characterization of Current Gain Versus Temperature in 4H-SiC Power BJTs
Buono, B., Ghandi, R., Domeij, M., Malm, B.G., Zetterling, C.-M., Ostling, M.
Published in IEEE transactions on electron devices (01.03.2010)
Published in IEEE transactions on electron devices (01.03.2010)
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Journal Article