Influence of a GaN Cap Layer on the Morphology and the Physical Properties of Embedded Self-Organized InN Quantum Dots on GaN(0001) Grown by Metal--Organic Vapour Phase Epitaxy
Ivaldi, Francesco, Meissner, Christian, Domagala, Jaros$ŀ$aw, Kret, S$ŀ$awomir, Pristovsek, Markus, Högele, Michael, Kneissl, Michael
Published in Japanese Journal of Applied Physics (01.03.2011)
Published in Japanese Journal of Applied Physics (01.03.2011)
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