Total Dose Radiation Response of NROM-Style SOI Non-Volatile Memory Elements
Draper, B., Dockerty, R., Shaneyfelt, M., Habermehl, S., Murray, J.
Published in IEEE transactions on nuclear science (01.12.2008)
Published in IEEE transactions on nuclear science (01.12.2008)
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Journal Article
Characterization of low dose SIMOX for low power electronics
Anc, M.J., Allen, L.P., Dolan, R.P., Cordts, B.F., Ryding, G., Mendicino, M.A., Xiaoyu Shi, Maszara, W., Dockerty, R., Vasudev, P.K., Roitman, P.
Published in 1996 IEEE International SOI Conference Proceedings (1996)
Published in 1996 IEEE International SOI Conference Proceedings (1996)
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Conference Proceeding
Shelf-life extension of vacuum packaged frankfurters made from beef inoculated with Streptococcus lactis
Wang, S.Y, Dockerty, T.R, Ledford, R.A, Stouffer, J.R
Published in Journal of food protection (01.02.1986)
Published in Journal of food protection (01.02.1986)
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Journal Article
Microbial level of pork skin as affected by the dressing process
Dockerty, T.R, Ockerman, H.W, Cahill, V.R, Kunkle, L.E, Weiser, H.H
Published in Journal of animal science (01.06.1970)
Published in Journal of animal science (01.06.1970)
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Journal Article
Low dose SIMOX and impact of ITOX process on quality of SOI film
Maszara, W.P., Bennett, J., Boden, T., Dockerty, R., Gondran, C.F.H., Jackett-Murphy, S., Vasudev, P.K., Anc, M.J., Hovel, H.
Published in 1997 IEEE International SOI Conference Proceedings (1997)
Published in 1997 IEEE International SOI Conference Proceedings (1997)
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Conference Proceeding
Low-leakage n-and p-channel Silicon-gate FET' s with an SiO(2)-Si(3)N(4)-gate insulator
Dockerty, R C, Abbas, S A, Barile, C A
Published in IEEE transactions on electron devices (01.02.1975)
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Published in IEEE transactions on electron devices (01.02.1975)
Journal Article
Low-leakage n-and p-channel Silicon-gate FET''s with an SiO(2)-Si(3)N(4)-gate insulator
Dockerty, R C, Abbas, S A, Barile, C A
Published in IEEE transactions on electron devices (01.02.1975)
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Published in IEEE transactions on electron devices (01.02.1975)
Journal Article
Insulator Charge and V[sub FB] Stability of SNOS Capacitors
Barile, C. A., Dockerty, R. C., Nagarajan, A.
Published in Journal of the Electrochemical Society (1974)
Published in Journal of the Electrochemical Society (1974)
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Journal Article
Hot Electron Induced Degradation of N-Channel IGFETs
Abbas, S. A., Dockerty, R. C.
Published in 14th International Reliability Physics Symposium (01.04.1976)
Published in 14th International Reliability Physics Symposium (01.04.1976)
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Conference Proceeding
Low-leakage, N-channel silicon gate FET with a self-aligned field shield
Abbas, S.A., Barile, C.A., Dockerty, R.C.
Published in 1973 International Electron Devices Meeting (1973)
Published in 1973 International Electron Devices Meeting (1973)
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Conference Proceeding