Heteroepitaxial Growth of Ferromagnetic MnSb(0001) Films on Ge/Si(111) Virtual Substrates
Burrows, Christopher W, Dobbie, Andrew, Myronov, Maksym, Hase, Thomas P. A, Wilkins, Stuart B, Walker, Marc, Mudd, James J, Maskery, Ian, Lees, Martin R, McConville, Christopher F, Leadley, David R, Bell, Gavin R
Published in Crystal growth & design (06.11.2013)
Published in Crystal growth & design (06.11.2013)
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Journal Article
Overcoming Low Ge Ionization and Erosion Rate Variation for Quantitative Ultralow Energy Secondary Ion Mass Spectrometry Depth Profiles of Si^sub 1-x^Ge^sub x^/Ge Quantum Well Structures
Morris, Richard J H, Dowsett, Mark G, Beanland, Richard, Dobbie, Andrew, Myronov, Maksym, Leadley, David R
Published in Analytical chemistry (Washington) (06.03.2012)
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Published in Analytical chemistry (Washington) (06.03.2012)
Journal Article
Overcoming Low Ge Ionization and Erosion Rate Variation for Quantitative Ultralow Energy Secondary Ion Mass Spectrometry Depth Profiles of Si 1– x Ge x /Ge Quantum Well Structures
Morris, Richard J. H., Dowsett, Mark G., Beanland, Richard, Dobbie, Andrew, Myronov, Maksym, Leadley, David R.
Published in Analytical chemistry (Washington) (06.03.2012)
Published in Analytical chemistry (Washington) (06.03.2012)
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Journal Article
The Stranski-Krastanow transition in SiGe epitaxy investigated by scanning transmission electron microscopy
Walther, Thomas, Norris, David J., Qiu, Yang, Dobbie, Andrew, Myronov, Maksym, Leadley, David R.
Published in Physica status solidi. A, Applications and materials science (01.01.2013)
Published in Physica status solidi. A, Applications and materials science (01.01.2013)
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Journal Article
Overcoming Low Ge Ionization and Erosion Rate Variation for Quantitative Ultralow Energy Secondary Ion Mass Spectrometry Depth Profiles of Si1―xGex/Ge Quantum Well Structures
MORRIS, Richard J. H, DOWSETT, Mark G, BEANLAND, Richard, DOBBIE, Andrew, MYRONOV, Maksym, LEADLEY, David R
Published in Analytical chemistry (Washington) (06.03.2012)
Published in Analytical chemistry (Washington) (06.03.2012)
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Journal Article
High Hole Mobility in 65 nm Strained Ge p-Channel Field Effect Transistors with HfO2 Gate Dielectric
Mitard, Jerome, Jaeger, Brice De, Eneman, Geert, Dobbie, Andrew, Myronov, Maksym, Kobayashi, Masaharu, Geypen, Jef, Bender, Hugo, Vincent, Benjamin, Krom, Raymond, Franco, Jacopo, Winderickx, Gillis, Vrancken, Evi, Vanherle, Wendy, Wang, Wei-E, Tseng, Joshua, Loo, Roger, Meyer, Kristin De, Caymax, Matty, Pantisano, Luigi, Leadley, David R, Meuris, Marc, Absil, Philippe P, Biesemans, Serge, Hoffmann, Thomas
Published in Jpn J Appl Phys (25.04.2011)
Published in Jpn J Appl Phys (25.04.2011)
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Journal Article
Overcoming low Ge ionization and erosion rate variation for quantitative ultralow energy secondary ion mass spectrometry depth profiles of Si(1-x)Ge(x)/Ge quantum well structures
Morris, Richard J H, Dowsett, Mark G, Beanland, Richard, Dobbie, Andrew, Myronov, Maksym, Leadley, David R
Published in Analytical chemistry (Washington) (06.03.2012)
Published in Analytical chemistry (Washington) (06.03.2012)
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Journal Article
High Hole Mobility in 65 nm Strained Ge p-Channel Field Effect Transistors with HfO 2 Gate Dielectric
Mitard, Jerome, Jaeger, Brice De, Eneman, Geert, Dobbie, Andrew, Myronov, Maksym, Kobayashi, Masaharu, Geypen, Jef, Bender, Hugo, Vincent, Benjamin, Krom, Raymond, Franco, Jacopo, Winderickx, Gillis, Vrancken, Evi, Vanherle, Wendy, Wang, Wei-E., Tseng, Joshua, Loo, Roger, Meyer, Kristin De, Caymax, Matty, Pantisano, Luigi, Leadley, David R., Meuris, Marc, Absil, Philippe P., Biesemans, Serge, Hoffmann, Thomas
Published in Japanese Journal of Applied Physics (01.04.2011)
Published in Japanese Journal of Applied Physics (01.04.2011)
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Journal Article
High Hole Mobility in 65 nm Strained Ge p-Channel Field Effect Transistors with HfO 2 Gate Dielectric
Mitard, Jerome, Jaeger, Brice De, Eneman, Geert, Dobbie, Andrew, Myronov, Maksym, Kobayashi, Masaharu, Geypen, Jef, Bender, Hugo, Vincent, Benjamin, Krom, Raymond, Franco, Jacopo, Winderickx, Gillis, Vrancken, Evi, Vanherle, Wendy, Wang, Wei-E., Tseng, Joshua, Loo, Roger, Meyer, Kristin De, Caymax, Matty, Pantisano, Luigi, Leadley, David R., Meuris, Marc, Absil, Philippe P., Biesemans, Serge, Hoffmann, Thomas
Published in Japanese Journal of Applied Physics (01.04.2011)
Published in Japanese Journal of Applied Physics (01.04.2011)
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Journal Article
Overcoming Low Ge Ionization and Erosion Rate Variation for Quantitative Ultralow Energy Secondary Ion Mass Spectrometry Depth Profiles of Si1–x Ge x /Ge Quantum Well Structures
Morris, Richard J. H, Dowsett, Mark G, Beanland, Richard, Dobbie, Andrew, Myronov, Maksym, Leadley, David R
Published in Analytical chemistry (Washington) (06.03.2012)
Published in Analytical chemistry (Washington) (06.03.2012)
Get full text
Journal Article