Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement
Guo, L., Wang, X. Q., Zheng, X. T., Yang, X. L., Xu, F. J., Tang, N., Lu, L. W., Ge, W. K., Shen, B., Dmowski, L. H., Suski, T.
Published in Scientific reports (13.03.2014)
Published in Scientific reports (13.03.2014)
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Journal Article
Pressure studies of multicarrier conduction in undoped InN grown on GaN buffer
Dmowski, L. H., Konczewicz, L., Suski, T., Contreras, S., Lu, H., Schaff, W. J.
Published in Physica Status Solidi. B: Basic Solid State Physics (01.04.2013)
Published in Physica Status Solidi. B: Basic Solid State Physics (01.04.2013)
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Journal Article
Parallel conduction in p-type gallium nitride homo-structures
Litwin-Staszewska, E, Konczewicz, L, Piotrzkowski, R, Dmowski, L, Czernecki, R, Prystawko, P
Published in Semiconductor science and technology (01.09.2008)
Published in Semiconductor science and technology (01.09.2008)
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Journal Article
High pressure studies of radiative recombination mechanisms in InN
Suski, T., Franssen, G., Teisseyre, H., Khachapuridze, A., Dmowski, L. H., Plesiewicz, J. A., Kamińska, A., Lu, H., Schaff, W.
Published in Physica Status Solidi (b) (01.01.2007)
Published in Physica Status Solidi (b) (01.01.2007)
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Conference Proceeding
Towards identification of localized donor states in InN
Plesiewicz, J, Suski, T, Dmowski, L, Walukiewicz, W, Yu, K M, Korman, A, Ratajczak, R, Stonert, A, Lu, Hai, Schaff, W
Published in Semiconductor science and technology (01.10.2007)
Published in Semiconductor science and technology (01.10.2007)
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Journal Article
Role of localized donor states in transport and photoluminescence of InN revealed by hydrostatic pressure studies
Suski, T., Kamińska, A., Franssen, G., Teisseyre, H., Dmowski, L. H., Plesiewicz, J. A., Lu, H. L., Schaff, W. J., Kurouchi, M., Nanishi, Y.
Published in Physica Status Solidi (b) (01.06.2007)
Published in Physica Status Solidi (b) (01.06.2007)
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Journal Article
Conference Proceeding
Band structure and effective mass of InN under pressure
Gorczyca, I., Dmowski, L., Plesiewicz, J., Suski, T., Christensen, N. E., Svane, A., Gallinat, C. S., Koblmueller, G., Speck, J. S.
Published in Physica Status Solidi (b) (01.05.2008)
Published in Physica Status Solidi (b) (01.05.2008)
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Conference Proceeding
Localized donor state above the conduction band minimum in InN revealed by high pressure and temperature transport experiments
Dmowski, L. H., Dybko, K., Plesiewicz, J., Suski, T., Lu, H., Schaff, W., Kurouchi, M., Nanishi, Y., Konczewicz, L., Cimalla, V., Ambacher, O.
Published in Physica Status Solidi (b) (01.06.2006)
Published in Physica Status Solidi (b) (01.06.2006)
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Journal Article
Conference Proceeding
Properties of InGaN blue laser diodes grown on bulk GaN substrates
Perlin, P., Suski, T., Leszczyński, M., Prystawko, P., Świetlik, T., Marona, Ł., Wiśniewski, P., Czernecki, R., Nowak, G., Weyher, J.L., Kamler, G., Borysiuk, J., Litwin-Staszewska, E., Dmowski, L., Piotrzkowski, R., Franssen, G., Grzanka, S., Grzegory, I., Porowski, S.
Published in Journal of crystal growth (15.07.2005)
Published in Journal of crystal growth (15.07.2005)
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Conference Proceeding
Pressure Studies of Defects and Impurities in Nitrides
Suski, T., Perlin, P., Skierbiszewski, C., Wisniewski, P., Dmowski, L., Leszczynski, M., Walukiewicz, W.
Published in physica status solidi (b) (01.11.1999)
Published in physica status solidi (b) (01.11.1999)
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Journal Article
Bulk GaN crystals grown at high pressure as substrates for blue-laser technology
Czernetzki, R, Leszczynski, M, Grzegory, I, Perlin, P, Prystawko, P, Skierbiszewski, C, Krysko, M, Sarzynski, M, Wisniewski, P, Nowak, G
Published in Physica status solidi. C (01.11.2003)
Published in Physica status solidi. C (01.11.2003)
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Journal Article
Pressure Effect on Parallel Transport in Low-Dimensional CdTe/CdMgTe Heterostructures
Wasik, D., Baj, M., Dmowski, L., Siwiec-Matuszyk, J., Janik, E., Wojtowicz, T., Karczewski, G.
Published in Physica status solidi. B. Basic research (01.01.2001)
Published in Physica status solidi. B. Basic research (01.01.2001)
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Journal Article
Investigation of the DX center in heavily doped n-GaAs
Maude, DK, Portal, JC, Dmowski, L, Foster, T, Eaves, L, Nathan, M, Heiblum, M, Harris, JJ, Beall, RB
Published in Physical review letters (17.08.1987)
Published in Physical review letters (17.08.1987)
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Journal Article
Effect of DX centers in the vertical transport properties of semiconductor superlattices
Aristone, F., Goutiers, B., Gauffier, J. L., Dmowski, L.
Published in Brazilian journal of physics (01.03.2000)
Published in Brazilian journal of physics (01.03.2000)
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Journal Article
Direct evidence of the two-electron character of DX centers based on co-doping with shallow donors and application of high pressure
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Conference Proceeding
Appearance and destruction of spatial correlation of DX charges in GaAs
Wilamowski, Z, Kossut, J, Suski, T, Wisniewski, P, Dmowski, L
Published in Semiconductor science and technology (01.10.1991)
Published in Semiconductor science and technology (01.10.1991)
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