Importance of building orientation in determining daylighting quality in student dorm rooms: Physical and simulated daylighting parameters’ values compared to subjective survey results
JOVANOVIC, A, PEJIC, P, DJORIC-VELJKOVIC, S, KARAMARKOVIC, J, DJELIC, M
Published in Energy and buildings (01.07.2014)
Published in Energy and buildings (01.07.2014)
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NBTI related degradation and lifetime estimation in p-channel power VDMOSFETs under the static and pulsed NBT stress conditions
MANIC, I, DANKOVIC, D, PRIJIC, A, DAVIDOVIC, V, DJORIC-VELJKOVIC, S, GOLUBOVIC, S, PRIJIC, Z, STOJADINOVIC, N
Published in Microelectronics and reliability (01.09.2011)
Published in Microelectronics and reliability (01.09.2011)
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Negative bias temperature instability in n-channel power VDMOSFETs
Danković, D., Manić, I., Davidović, V., Djorić-Veljković, S., Golubović, S., Stojadinović, N.
Published in Microelectronics and reliability (01.08.2008)
Published in Microelectronics and reliability (01.08.2008)
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Threshold voltage instabilities in p-channel power VDMOSFETs under pulsed NBT stress
STOJADINOVIC, N, DANKOVIC, D, MANIC, I, PRIJIC, A, DAVIDOVIC, V, DJORIC-VELJKOVIC, S, GOLUBOVIC, S, PRIJIC, Z
Published in Microelectronics and reliability (01.09.2010)
Published in Microelectronics and reliability (01.09.2010)
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Effects of low gate bias annealing in NBT stressed p-channel power VDMOSFETs
MANIC, I, DANKOVIC, D, DJORIC-VELJKOVIC, S, DAVIDOVIC, V, GOLUBOVIC, S, STOJADINOVIC, N
Published in Microelectronics and reliability (01.09.2009)
Published in Microelectronics and reliability (01.09.2009)
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Conference Proceeding
NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs
DANKOVIC, D, MANIC, I, DJORIC-VELJKOVIC, S, DAVIDOVIC, V, GOLUBOVIC, S, STOJADINOVIC, N
Published in Microelectronics and reliability (01.09.2006)
Published in Microelectronics and reliability (01.09.2006)
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Conference Proceeding
Radiation and annealing related effects in NBT stressed P-channel power VDMOSFETs
Danković, D., Davidović, V., Golubović, S., Veljković, S., Mitrović, N., Djorić-Veljković, S.
Published in Microelectronics and reliability (01.11.2021)
Published in Microelectronics and reliability (01.11.2021)
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Impact of negative bias temperature instability on p-channel power VDMOSFET used in practical applications
Mitrović, N., Veljković, S., Davidović, V., Djorić-Veljković, S., Golubović, S., Živanović, E., Prijić, Z., Danković, D.
Published in Microelectronics and reliability (01.11.2022)
Published in Microelectronics and reliability (01.11.2022)
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Negative bias temperature instabilities in sequentially stressed and annealed p-channel power VDMOSFETs
DANKOVIC, D, MANIC, I, DAVIDOVIC, V, DJORIC-VELJKOVIC, S, GOLUBOVIC, S, STOJADINOVIC, N
Published in Microelectronics and reliability (01.09.2007)
Published in Microelectronics and reliability (01.09.2007)
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NBTI and irradiation related degradation mechanisms in power VDMOS transistors
Stojadinović, N., Djorić-Veljković, S., Davidović, V., Golubović, S., Stanković, S., Prijić, A., Prijić, Z., Manić, I., Danković, D.
Published in Microelectronics and reliability (01.09.2018)
Published in Microelectronics and reliability (01.09.2018)
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A review of pulsed NBTI in P-channel power VDMOSFETs
Danković, D., Manić, I., Prijić, A., Davidović, V., Prijić, Z., Golubović, S., Djorić-Veljković, S., Paskaleva, A., Spassov, D., Stojadinović, N.
Published in Microelectronics and reliability (01.03.2018)
Published in Microelectronics and reliability (01.03.2018)
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Journal Article
Mechanisms of spontaneous recovery in DC gate bias stressed power VDMOSFETs
MANIC, I, DJORIC-VELJKOVIC, S, DAVIDOVIC, V, DANKOVIC, D, GOLUBOVIC, S, STOJADINOVIC, N
Published in IET circuits, devices & systems (01.04.2008)
Published in IET circuits, devices & systems (01.04.2008)
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Electrical stressing effects in commercial power VDMOSFETs
STOJADINOVIC, N, MANIC, I, DAVIDOVIC, V, DANKOVIC, D, DJORIC-VELJKOVIC, S, GOLUBOVIC, S, DIMITRIJEV, S
Published in IEE proceedings. Circuits, devices, and systems (01.06.2006)
Published in IEE proceedings. Circuits, devices, and systems (01.06.2006)
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Recovery treatment effects on gamma radiation response in electrically stressed power VDMOS transistors
Djorić-Veljković, S., Davidović, V., Danković, D., Manić, I., Golubović, S., Stojadinović, N.
Published in 2014 29th International Conference on Microelectronics Proceedings - MIEL 2014 (01.05.2014)
Published in 2014 29th International Conference on Microelectronics Proceedings - MIEL 2014 (01.05.2014)
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Conference Proceeding
Negative bias temperature instability mechanisms in p-channel power VDMOSFETs
Stojadinović, N., Danković, D., Djorić-Veljković, S., Davidović, V., Manić, I., Golubović, S.
Published in Microelectronics and reliability (01.09.2005)
Published in Microelectronics and reliability (01.09.2005)
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Conference Proceeding
Effects of electrical stressing in power VDMOSFETs
Stojadinovic, N., Manic, I., Davidovic, V., Dankovic, D., Djoric-Veljkovic, S., Golubovic, S., Dimitrijev, S.
Published in Microelectronics and reliability (2005)
Published in Microelectronics and reliability (2005)
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Journal Article
New approach in estimating the lifetime in NBT stressed P-channel power VDMOSFETs
Dankovic, D., Manic, I., Davidovic, V., Djoric-Veljkovic, S., Golubovic, S., Stojadinovic, N.
Published in 2008 26th International Conference on Microelectronics (01.05.2008)
Published in 2008 26th International Conference on Microelectronics (01.05.2008)
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Conference Proceeding
Lifetime Estimation in NBT Stressed P-Channel Power VDMOSFETs
Dankovic, D., Manic, I., Djoric-Veljkovic, S., Davidovic, V., Golubovic, S., Stojadinovic, N.
Published in 2006 25th International Conference on Microelectronics (2006)
Published in 2006 25th International Conference on Microelectronics (2006)
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Conference Proceeding
Spontaneous Recovery in DC Gate Bias Stressed Power VDMOSFETs
Manic, I., Djoric-Veljkovic, S., Davidovic, V., Dankovic, D., Golubovic, S., Stojadinovic, N.
Published in 2006 25th International Conference on Microelectronics (2006)
Published in 2006 25th International Conference on Microelectronics (2006)
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Conference Proceeding
Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs
Stojadinovic, N., Manic, I., Djoric-Veljkovic, S., Davidovic, V., Golubovic, S., Dimitrijev, S.
Published in Microelectronics and reliability (01.09.2001)
Published in Microelectronics and reliability (01.09.2001)
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