Highly robust and reliable power amplifiers in 22FDX and 45RFSOI technologies
Bossuet, A., Divay, A., Martineau, B., Dehos, C., Blampey, B., Morandini, Y.
Published in ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC) (19.09.2022)
Published in ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC) (19.09.2022)
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Conference Proceeding
A Methodology to Address RF Aging of 40nm CMOS PA Cells Under 5G mmW Modulation Profiles
Divay, A., Dehos, C., Charlet, I., Gaillard, F., Duriez, B., Garros, X., Antonijevic, J., Hai, J., Revil, N., Forest, J., Knopik, V., Cacho, F., Roy, D., Federspiel, X., Cremer, S., Chevalier, P.
Published in 2024 IEEE International Reliability Physics Symposium (IRPS) (14.04.2024)
Published in 2024 IEEE International Reliability Physics Symposium (IRPS) (14.04.2024)
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Conference Proceeding
Integrated Test Circuit for Off-State Dynamic Drain Stress Evaluation
Hai, J., Cacho, F., Federspiel, X., Garba-Seybou, T., Divay, A., Lauga-Larroze, E., Arnould, J.-D.
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
Published in 2023 IEEE International Reliability Physics Symposium (IRPS) (01.03.2023)
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Conference Proceeding
Comprehensive Analysis of RF Hot-Carrier Reliability Sensitivity and Design Explorations for 28GHz Power Amplifier Applications
Hai, J., Cacho, F., Divay, A., Lauga-Larroze, E., Arnould, J.-D., Forest, J., Knopik, V., Garros, X.
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01.03.2022)
Published in 2022 IEEE International Reliability Physics Symposium (IRPS) (01.03.2022)
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Conference Proceeding
CMOS FD-SOI Technologies Ruggedness for Millimeter Wave Power Amplifier Design
Martineau, B., Bossuet, A., Divay, A., Blampey, B., Morandini, Y.
Published in 2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS) (24.10.2022)
Published in 2022 29th IEEE International Conference on Electronics, Circuits and Systems (ICECS) (24.10.2022)
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Conference Proceeding
65nm RFSOI Power Amplifier Transistor Ageing at mm W frequencies, 14 GHz and 28 GHz
Divay, A., Forest, J., Knopik, V., Hai, J., Revil, N., Antonijevic, J., Michard, A., Cacho, F., Vincent, E., Gaillard, F., Garros, X.
Published in 2021 IEEE International Electron Devices Meeting (IEDM) (11.12.2021)
Published in 2021 IEEE International Electron Devices Meeting (IEDM) (11.12.2021)
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Conference Proceeding
6.6W/mm 200mm CMOS compatible AlN/GaN/Si MIS-HEMT with in-situ SiN gate dielectric and low temperature ohmic contacts
Morvan, E., Gobil, Y., Morisot, F., Biscarat, J., Charles, M., Lugo, J., Divay, A., Medbouhi, M., Charlet, I., Delprato, J., Scheiblin, P., Rrustemi, B., Giry, A., Serhan, A., Ruel, S., Pimenta-Barros, P., Laulagnet, F., Minoret, S., Anotta, A., Billon, T., Duriez, B.
Published in 2023 International Electron Devices Meeting (IEDM) (09.12.2023)
Published in 2023 International Electron Devices Meeting (IEDM) (09.12.2023)
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Conference Proceeding
A Very Robust and Reliable 2.7GHz +31dBm Si RFSOI Transistor for Power Amplifier Solutions
Garros, X., Cacho, F., Vincent, E., Granger, E., Gaillard, F., Knopik, V., Revil, N., Divay, A., Cluzel, J., Lugo, J., Giry, A., Federspiel, X., Bertrand, G.
Published in 2019 IEEE International Electron Devices Meeting (IEDM) (01.12.2019)
Published in 2019 IEEE International Electron Devices Meeting (IEDM) (01.12.2019)
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Conference Proceeding
A 22nm FDSOI Technology Optimized for RF/mmWave Applications
Ong, S. N., Lehmann, S., Chow, W. H., Zhang, C., Schippel, C., Chan, L. H. K., Andee, Y., Hauschildt, M., Tan, K. K. S., Watts, J., Lim, C. K., Divay, A., Wong, J. S., Zhao, Z., Govindarajan, M., Schwan, C., Huschka, A., Bcllaouar, A., Loo, W., Mazurier, J., Grass, C., Taylor, R., Chew, K. W. J., Embabi, S., Workman, G., Pakfar, A., Morvan, S., Sundaram, K., Lau, M. T., Rice, B., Harame, D.
Published in 2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) (01.06.2018)
Published in 2018 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) (01.06.2018)
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Conference Proceeding
An athermal measurement technique for long time constants traps characterization in GaN HEMT transistors
Divay, A., Masmoudi, M., Latry, O., Duperrier, C., Temcamani, F.
Published in Microelectronics and reliability (01.08.2015)
Published in Microelectronics and reliability (01.08.2015)
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Journal Article
Hybrid Integration of 3D-RF Interconnects on AlGaN/GaN/Si HEMT RF Transistor featuring 2.2W/mm Psat & 41% PAE @28GHz using a Robust and Cost-Effective Chiplet Heterogeneous Bonding Technique
Divay, A., Valorge, O., Dubarry, C., Medbouhi, M., Franiatte, R., Mermin, D., Velard, R., Gobil, Y., Morisot, F., Morvan, E., Charlet, I., Lucci, L., Lugo, J., Garros, X.
Published in 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (16.06.2024)
Published in 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) (16.06.2024)
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Conference Proceeding
Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode
Divay, A., Duperrier, C., Temcamani, F., Latry, O.
Published in Microelectronics and reliability (01.09.2016)
Published in Microelectronics and reliability (01.09.2016)
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Journal Article
Extraction of physical Schottky parameters using the Lambert function in Ni/AlGaN/GaN HEMT devices with defined conduction phenomena Project supported by the French Department of Defense (DGA)
Latry, O., Divay, A., Fadil, D., Dherbécourt, P.
Published in Journal of semiconductors (01.01.2017)
Published in Journal of semiconductors (01.01.2017)
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Journal Article
An athermal measurement technique for long traps characterization in GaN HEMT transistors
Divay, A, Masmoudi, Mohamed Lamine, Latry, Olivier, Duperrier, C, Temcamani, Farid
Published in Microelectronics and reliability (01.09.2015)
Published in Microelectronics and reliability (01.09.2015)
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Journal Article
Advantages of Faceted P-Raised Source/Drain in Fully Depleted Silicon on Insulator Technology
Aydin, Ömür Işıl, Holt, Judson Robert, Le Royer, Cyrille, Vanamurthy, Laks, Feudel, Thomas, Heyne, Tobias, Gerber, Ralf, Lenski, Markus, Jansen, Sören, Utess, Dirk, Klein, Christoph, Peeva, Anita, Mulfinger, George Robert, McArdle, Timothy J, Barge, David, Divay, Alexis, Lehmann, Steffen, Smith, Elliot, Peters, Carsten, Sachse, Jens-Uwe
Published in ECS transactions (20.07.2018)
Published in ECS transactions (20.07.2018)
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Journal Article
A cost effective RF-SOI Drain Extended MOS transistor featuring PSAT=19dBm @28GHz & VDD=3V for 5G Power Amplifier application
Garros, X., Divay, A., Lacord, J., Serhan, A., Fache, T., Antonijevic, J., Cremer, S., Knopik, V., Giry, A., Charlet, I., Chouk, R., Royet, A-S., Forest, J., Revil, N., Cathelin, P., Chevalier, P., Roy, D., Gaillard, F., Duriez, B.
Published in 2023 International Electron Devices Meeting (IEDM) (09.12.2023)
Published in 2023 International Electron Devices Meeting (IEDM) (09.12.2023)
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Conference Proceeding
A 22nm FDSOI Technology with integrated 3.3V/5V/6.5V RFLDMOS Devices for IOT SOC applications
Schippel, C., Lehmann, S., Ong, S.N., Muehlhoff, A., Cortes, I., Chow, W.H., Utess, D., Zaka, A., Divay, A., Pakfar, A., Faul, J., Mazurier, J., Chew, K.W., Chan, L.H.K., Taylor, R., Rice, B., Harame, D.
Published in 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) (01.10.2018)
Published in 2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) (01.10.2018)
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Conference Proceeding