Band alignment and defect states at SiC/oxide interfaces
Afanas’ev, V V, Ciobanu, F, Dimitrijev, S, Pensl, G, Stesmans, A
Published in Journal of physics. Condensed matter (05.05.2004)
Published in Journal of physics. Condensed matter (05.05.2004)
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Journal Article
Charge Trapping Properties of 3C- and 4H-SiC MOS Capacitors With Nitrided Gate Oxides
Arora, R., Rozen, J., Fleetwood, D.M., Galloway, K.F., Zhang, C.X., Jisheng Han, Dimitrijev, S., Kong, F., Feldman, L.C., Pantelides, S.T., Schrimpf, R.D.
Published in IEEE transactions on nuclear science (01.12.2009)
Published in IEEE transactions on nuclear science (01.12.2009)
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Journal Article
Effects of electrical stressing in power VDMOSFETs
Stojadinovic, N., Manic, I., Davidovic, V., Dankovic, D., Djoric-Veljkovic, S., Golubovic, S., Dimitrijev, S.
Published in Microelectronics and reliability (2005)
Published in Microelectronics and reliability (2005)
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Journal Article
Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs
Stojadinovic, N., Manic, I., Djoric-Veljkovic, S., Davidovic, V., Golubovic, S., Dimitrijev, S.
Published in Microelectronics and reliability (01.09.2001)
Published in Microelectronics and reliability (01.09.2001)
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Journal Article
Investigation of ultralow leakage in MOS capacitors on 4H SiC
Kuan Yew Cheong, Dimitrijev, S., Jisheng Han
Published in IEEE transactions on electron devices (01.09.2004)
Published in IEEE transactions on electron devices (01.09.2004)
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Journal Article
Investigation of electron-hole generation in MOS capacitors on 4H SiC
Kuan Yew Cheong, Dimitrijev, S., Jisheng Han
Published in IEEE transactions on electron devices (01.06.2003)
Published in IEEE transactions on electron devices (01.06.2003)
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Journal Article
The Fundamental Current Mechanisms in SiC Schottky Barrier Diodes: Physical Model, Experimental Verification and Implications
Dimitrijev, S., Nicholls, J., Tanner, P., Han, J.
Published in 2019 IEEE 31st International Conference on Microelectronics (MIEL) (01.09.2019)
Published in 2019 IEEE 31st International Conference on Microelectronics (MIEL) (01.09.2019)
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Conference Proceeding
Nitridation of silicon-dioxide films grown on 6H silicon carbide
Dimitrijev, S., Hui-Feng Li, Harrison, H.B., Sweatman, D.
Published in IEEE electron device letters (01.05.1997)
Published in IEEE electron device letters (01.05.1997)
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Journal Article
Novel SiC accumulation-mode power MOSFET
Liewih, H., Dimitrijev, S., Weitzel, C.E., Harrison, H.B.
Published in IEEE transactions on electron devices (01.08.2001)
Published in IEEE transactions on electron devices (01.08.2001)
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Journal Article
SIMS analysis of nitrided oxides grown on 4H-SiC
TANNER, P, DIMITRIJEV, S, LI, H.-F, SWEATMAN, D, PRINCE, K. E, HARRISON, H. B
Published in Journal of electronic materials (01.02.1999)
Published in Journal of electronic materials (01.02.1999)
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Journal Article